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研究生:林建廷
研究生(外文):Lin,Chien-Ting
論文名稱:800nm波段高功率半導體雷射之研製、封裝與特性分析
論文名稱(外文):Fabrication,Bonding and Characterization of High Power Semiconductor Lasers Emitting at 800nm Range
指導教授:林國瑞林國瑞引用關係
指導教授(外文):Lin,Gray
口試委員:陳永富林國瑞林聖迪
口試委員(外文):Chen,Yung-FuLin,GrayLin,Sheng-Di
口試日期:2018-01-05
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2018
畢業學年度:106
語文別:中文
論文頁數:99
中文關鍵詞:高功率半導體雷射共晶鍵合封裝量子井雷射寬波導雷射
外文關鍵詞:High Power Semiconductor LasersEutectic Die BondingQuantum Well LasersBroad Area Lasers
相關次數:
  • 被引用被引用:6
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  • 下載下載:76
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本論文利用非對稱型披覆層磊晶結構進行高功率雷射樣品製作,並透過引入電流阻擋層有效減低雷射鏡面端之載子密度,減低災難性光學損傷發生之風險,且透過電鍍厚金方式提高散熱效率。與此同時也透過光學鍍膜提高出光效率,使雷射整體斜率效率提高。封裝部分則將雷射二極體封裝於C-mount及submount,並且透過不同封裝條件嘗試整理出適合所有散熱基板的封裝區間,另外透過推力試驗檢測封裝品質,結果符合國際規範,顯示封裝品質相當良好。

量測結果則顯示此非對稱型披覆層磊晶結構設計,其遠場發散角為33度,與模擬結果相當吻合且遠小於傳統磊晶結構之遠場發散角45度,同時在雷射整體效率方面,腔長2mm之樣品其出光功率可達7W,功率轉換效率可高達55%,且元件整體熱阻值在封裝過後小於2(K/W),整體元件特性與目前商用雷射產品相比已相當接近,顯示此磊晶結構將可應用於實際產品當中。
A novel epi-structure called asymmetric cladding of single GaAs quantum well laser structure design is presented. During fabrication process, a current blocking design have been utilized in order to reduce the carrier density at the facet,which can suppress catastrophic optical damage (COD). An anti-reflection (AR) and high reflection (HR) facet coating have been used as well in order to improve the slope efficiency. Bonding window of CuW C-mount and submount have been established by operating different bonding conditions. Results of destructive die shear test after bonding satisfies international standard MIL-STD-883G, showing a good bonding quality.

A narrower far field angle of 33˚ compare to 45˚ of traditional epi-structure design have been demonstrated. Results of far field angle is well-consisted to simulation result. Power conversion efficiency of 2mm cavity length device is as high as 55%, with output power above 7W. Thermal resistance measurement after die bonding is below 2(K/W), showing a good ability of heat dissipation. The overall characteristics of this high power semiconductor laser device based on this novel epi-structure design are as good as the characteristics of commercial laser products, which can satisfy the demands of current applications.
摘要 I
ABSTRACT II
致謝 IV
目錄 VII
圖目錄 X
表目錄 XIV
第1章 緒論 1
1.1 簡介及動機 1
1.2 論文架構 2
第2章 元件製作與儀器架設 3
2.1 磊晶結構設計及模擬 3
2.2 高功率半導體雷射製程 9
2.3 鏡面鍍膜 12
2.3.1 鏡面鍍膜製程 13
2.3.2 COD量測 20
2.4 量測系統架設 21
2.4.1 L-I-V量測及頻譜量測系統 21
2.4.2 遠場量測系統 22
2.4.3 極性量測系統 23
2.4.4 暫態熱阻量測系統 24

第3章 光電特性量測與分析 26
3.1 .雷射基本特性探討 26
3.1.1 直接劈裂(As-cleaved)雷射樣品特性 26
3.1.2 經過鏡面鍍膜與電鍍厚金樣品L-I-V量測 34
3.1.3 溫度特性量測 38
3.2 遠場特性量測 43
第4章 晶粒封裝與熱阻量測 52
4.1 雷射晶粒封裝探討 52
4.1.1 散熱基板種類介紹 52
4.1.2 共晶鍵合技術 54
4.1.3 封裝條件測試 55
4.1.4 推力測試 60
4.2 封裝後樣品特性分析 63
4.2.1 封裝後樣品L-I-V量測 63
4.2.2 極化量測 66
4.3 暫態熱阻量測 69
4.3.1 暫態熱阻量測原理 69
4.3.2 熱阻、熱容與微分結構函數 72
4.3.3 暫態熱阻量測結果分析及探討 76
第5章 功率消耗占比分析 82
5.1 功率消耗占比計算原理 82
5.2 直接劈裂樣品功率消耗占比計算 85
5.3 經過鏡面鍍膜及電鍍厚金樣品之功率消耗占比 87
5.4 封裝後樣品之功率消耗占比 89
第6章 總結與未來展望 92
6.1 目前研究結論 92
6.2 未來展望 94
參考文獻 95
簡歷(VITA) 99
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