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研究生:羅卓彥
研究生(外文):LO, CHO-YEN
論文名稱:浮體場環不同環深度之研究
論文名稱(外文):Comprehensive Studies of Floating Field Ring with Different Ring Depth
指導教授:鄭岫盈
指導教授(外文):CHENG, SHIOU-YING
口試委員:鄭岫盈譚仕煒常文龍許孟凱賴士文
口試委員(外文):CHENG, SHIOU-YINGTAN, SHIH-WEICHANG, WEN-LUNGHSU, MENG-KAILAI, SHIH-WEN
口試日期:2018-05-20
學位類別:碩士
校院名稱:國立宜蘭大學
系所名稱:電子工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2018
畢業學年度:106
語文別:中文
論文頁數:41
中文關鍵詞:P型浮體場環P型浮體多場環空乏區
外文關鍵詞:Floating Field P-RingMultiple Floating Field P-RingsDepletion region
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  在本研究論文中,使用商業元件模擬公司所開發之TCAD模擬軟體來探討與分析二維元件之物理特性,並利用ATLAS元件模擬軟體設計出一個尺寸寬為12 µm、高為20 µm 的PN二極體元件(PN Diode),並對此元件進行研究探討。由於空間電荷區限制了電流發展,因此我們增加了P型浮體場環(Floating Field P-Ring) 與P型浮體多場環(Multiple Floating Field P-Rings)結構,透過空乏區的延伸,有助於減少主要接面處的高電場作用藉此提升崩潰電壓。
  在本論文第一章中,會簡單的介紹二極體的發展史及研究動機。第二章為理論介紹,利用波松方程式來解釋電荷、電位和電場之間的關係,與二極體的崩潰機制。第三章為浮體場環深度調變之研究,第四章為浮體多場環結構之研究。在三四章中,將會分析研究數據並討論,其中包含逆向偏壓曲線、電場分佈、空乏區、PN接面、電位分佈、電子游離係數等。在第五章,會提到未來研究之目標。
  In this study, we used the Transactions on Computer-Aided Design (TCAD) of Integrated Circuits and Systems, developed by company of commercial devices simulator, to research and analyze the physical characteristics of two-dimensional devices. We designed and investigated a PN Diode with 12 µm in width and 20 µm in height by ATLAS device Simulator. Because the current was limited by the depletion region, we added the Floating Field P-Ring structure and Multiple Floating Field P-Rings structure. Through the extension of the depletion region, it would increase the breakdown voltage by reducing the high electric field at the main junction.
  In the thesis report, the first chapter is a brief introduction to the development of diode and the purpose of the study. The second chapter discusses theories of the applications of Poisson’s equation on charge, potential, Electric field, and on breakdown voltage of PN diode. The third and the fourth chapters include the studies of the modulation depth of floating field ring and the structure of multiple floating field rings. These chapters analyze the research data and generate discussions regarding reverse bias, electric field distribution, depletion region, PN junction, potential distribution, electron ionization coefficient, and so on. The fifth chapter proposes suggestions for future studies.
摘要 I
Abstract II
誌謝 IV
目錄 V
圖目錄 VII
表目錄 IX
Chapter 1 緒論 1
1-1 前言 1
1-2 研究動機 1
1-3 論文架構 2
Chapter 2 理論介紹 3
2-1 軟體簡介 3
2-2 波松方程式 5
2-3 元件崩潰機制 8
2-3-1 稽納崩潰 8
2-3-2 雪崩崩潰 9
2-4 本質半導體濃度 10
Chapter 3 浮體場環-深度變化與分析 11
3-1 結構參數介紹 11
3-1-1 摻雜模型設定 12
3-1-2 程式碼參數介紹 12
3-2 浮體場環特性分析 14
3-2-1 逆向偏壓曲線 14
3-2-2 電場分佈 17
3-2-3 電位分佈 18
3-2-4 PN接面與空乏區 21
3-3 模擬結果與分析 23
3-3-1 PN結構與浮體場環結構之比較 24
Chapter 4 浮體多場環—深度變化與分析 25
4-1 實驗參數設定 25
4-2 浮體多場環結構參數介紹 26
4-3 浮體多場環特性分析 27
4-3-1 逆向偏壓曲線 27
4-3-2 空乏區 29
4-3-3 電場分佈 33
4-3-4 電子游離係數 35
4-3-5 電位分佈 36
4-4 實驗結果與數據分析 38
Chapter 5 結論 39
參考文獻 40
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[15]Hiroshi Ohta, Kentaro Hayashi, Tohru Nakamura and Tomoyoshi Mishima, “High Breakdown Voltage Vertical GaN P-N Junction Diodes Using Guard Ring Structures", IEEE, 2017.
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