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研究生:伍廣毅
研究生(外文):Kuong Ngai Ng
論文名稱:不同摻雜銦之氮化銦鎵薄膜載子釋放機制
論文名稱(外文):Carrier Relaxation of InGaN Thin Films
指導教授:鄭德俊鄭德俊引用關係
指導教授(外文):Der-Jun Jang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:物理學系研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2018
畢業學年度:106
語文別:中文
論文頁數:82
中文關鍵詞:載子釋放激發-探測氮化銦鎵薄膜不同波長
外文關鍵詞:InGaN thin filmPump-ProbeCarrier relaxationTwo colour
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本論文將探討氮化銦鎵薄膜在摻雜不同比例銦的載子運動機制。我們將藉由超快時間解析激發-探測光譜技術(Time-resolved pump-probe technique)來討論在不同激發光強度下的不同銦摻雜比例的氮化銦鎵之載子動力學,發現氮化銦鎵會隨銦的摻雜愈高而出現愈短的載子冷卻時間。本論文亦會把四個不同銦比例的氮化銦鎵以不同温度的光致螢光光譜來討論它們的峰值變化與能隙,發現四個氮化銦鎵樣品的峰值均會隨升温而出現先紅移,後藍移,再紅移的現象。而光致螢光光譜的峰值會隨銦摻雜0.0091至0.215,峰值位置則會由2.38eV至2.97eV的改變。
In this study, the carrier dynamics of InGaN thin films were studied using time resolved pump probe technique (TRPP). This was done by studying the energy released due to excitation and recombination of InGaN thin films in different conditions, such as power density and composition of In. In TRPP spectroscopy, higher pump power results to a higher decay rate in all the samples. By increasing the composition of In in InGaN, a faster decay was observed. Furthermore, the temperature dependent photoluminescence (PL) spectroscopy was measured in order to determine the band gap of the InGaN thin films. The PL peak energy of InGaN was discovered to increase from 2.38 eV to 2.97 eV as the composition of In was decreased from 0.215 to 0.091.
第一章 導論 p.1
1.1簡介 p.1
1.2氮化(銦)鎵發展史 p.1
1.3文獻探討 p.3
1.4研究動機 p.5
第二章 實驗原理與架設 p.7
2.1 激發探測原理 p.7
2.2實驗架設 p.10
2.2.1不同波長時間解析激發-探測(TRPP)實驗架設 p.11
2.2.2 光致螢光(PL)光譜系統 p.12
2.3 鎖相放大器 p.13
第三章 載子動力學 p.16
3.1 激發電子能量釋放過程 p.16
3.2 電子與電洞的結合機制 p.17
3.3 載子衰退率 p.19
3.4 光激發的載子濃度 p.21
3.5 氮化銦鎵的吸收係數計算 p.22
3.6 光束大小計算 p.22
第四章 樣品分析與討論 p.23
4.1樣品資訊 p.23
4.2光致螢光(PL)光譜實驗與分析 p.24
4.3 時間解析不同波長激發-探測(TRPP)實驗與分析 p.49
4.3.1 脈衝雷射的功率計算 p.49
4.3.2 不同波長激發-探測 (以不同激發功率為變因) p.50
4.3.3 不同波長激發-探測光譜比較 p.58
4.3.4 慢速衰減時間分析 p.61
4.3.5 快速衰減時間分析 p.63
第五章 結論 p.67
參考資料 p.69
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