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研究生(外文):Chien, Ming-Hung
論文名稱(外文):The influence of different process on the Random Telegraph Noise of the NAND Flash Memory
指導教授(外文):King, Ya-Chin
外文關鍵詞:Flash MemoryNAND FlashMemory CellRTN
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In the past two decades, flash memory has played an important role in the storage market, and NAND flash memory has become the best solution for massive storage due to its low cost and high density.

However, as the medium CMOS technology progresses, the size of a memory cell becomes smaller and smaller, and the developers face with severe challenges in terms of memory durability, reliability, and device lifetime, when experience frequent erasing and programming during oper-ation.

In programming and erasing cycle tests, defects are created on the channel oxide film. These defects occur at the interface between the oxide layer and the substrate which converse to phase noise that affects the per-formance of memory array. The above behavior caused the capture and re-lease of electrons, which in turn changed the current of the channel, lead-ing to random telegraph noise. Also, as the chip size shrinks, signal to noise ratio decreases which cause additional challenges in readout circuit design much more difficult. Therefore, analysis on the influence of process and experiment on random telegraph noise is very important.

With the miniaturization of devices, the impact of random telegraph noise cannot be ignored. Therefore, this study employed 1X nanometer NAND flash memory as test subject, and discuss under the circumstances which one can induced random telegraph noise the most easily. Moreover, the effects of different manufacturing processes on RTN on 2D NAND flash memory arrays.

第一章 緒論 1
1.1 研究動機 1
1.2 揮發性記憶體 2
1.3 非揮發性記憶體 2
1.4 論文章節介紹 3
第二章 雜訊介紹 4
2.1 2D NAND微縮及線以及技術瓶頸 4
2.2 雜訊種類 4
2.2.1 熱雜訊 4
2.2.2 散粒雜訊 Shot Noise 6
2.2.3 產生複合雜訊Generation-Recombination Noise 6
2.2.4 閃爍雜訊 (1/f noise) 7
2.2.5 隨機電報雜訊 8
2.3 隨電報雜訊中電子的捕捉以及釋放時間 8
2.4 小結 8
第三章 NAND CELL特性及雜訊量測 11
3.1 NAND快閃記憶體介紹 11
3.1.1 NAND CELL的結構 11
3.2 NAND CELL的操作模式 12
(a) 寫入 12
(b) 抹除 12
(c) 讀取 12
3.3 量測機台介紹 13
3.4 RTN的獲取 13
3.4.1 全自動機台的量測 14
3.4.2 半自動機台的量測 14
3.4.3 寫入/抹除循環測試後臨界電壓的偏移現象 15
3.5 RTN特性之變化 16
3.5.1 Cycling Effect 16
3.5.2 Different State Effect 17
3.5.3讀取偏壓之影響 17
3.5.4 Self-Recovery Effect 18
3.6 小結 18
第四章 不同的製程在產品上對RTN的影響結果及分析 40
4.1 本章介紹 40
4.2 字元線間氧化層厚度對RTN的影響 40
4.3 不同通道氧化層厚度對於RTN的影響 41
第五章 結論 58

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