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研究生:羅子嘉
研究生(外文):Luo, Zih-Jia
論文名稱:利用掃描穿隧顯微鏡探討在硒化銦上未氧化表面和氧化表面之介面接合處的電子特性
論文名稱(外文):Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface junction
指導教授:傅祖怡
指導教授(外文):Fu, Tsu-yi
學位類別:碩士
校院名稱:國立臺灣師範大學
系所名稱:物理學系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2018
畢業學年度:106
語文別:中文
論文頁數:47
中文關鍵詞:硒化銦層狀半導體氧化表層掃描穿隧顯微鏡掃描式穿隧能譜載子轉移物理現象機械剝離法
外文關鍵詞:InSelayered semiconductoroxide layerSTMSTScharge transfer physical mechanismmechanical exfoliation
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硒化銦在其表面氧化後,會與塊材產生PN接面(PN junction)。當光子入射至PN接面時,會產生電子電洞對且會因為空乏區產生的內建電場而分離,促使光伏特效應(photovoltaic effect)產生的功率提升。且硒化銦備受關注的一點是其氧化表面可以透過調控氧化因素來改變光反應(photo responsivity),且有研究表示光反應會隨著氧化程度上升,所以硒化銦很有潛力做為光探測器(photo dectector)。
硒化銦的表面形貌和電性都非常容易受到氧化影響。在氧化後硒化銦表面形貌會變得較粗糙而電性表現上會呈現更N-type的行為且能隙更大。當硒化銦氧化到達一定程度後其表面最終會生成三氧化二銦。就此形成硒化銦和三氧化二銦的異質結構(heterostructure)。根據其他巨觀的量測推測硒化銦和其表面的氧化層間會有載子轉移的現象。
為了證實上面的論述,本研究是由掃描穿隧顯微鏡探討二維層狀半導體材料硒化銦表面經過機械剝離法處理前後所形成之介面接合處(interface junction)所發生的電子特性改變的現象。並進一步從掃描穿隧能譜的曲線分析微觀尺度下呈現出介面接合處有載子轉移現象,此現象為氧化層抓走底下硒化銦塊材的電子,並且氧化層內的電洞會填補到硒化銦裡。
Indium selenide(InSe) will form a PN junction between the bulk region and oxide surface. When the photon is incident on the PN junction the electron-hole pair is generated and separated by the built-in electric field begated by the depletion region. And enhance the power which generated by photovoltaic effect. InSe center of attention is that its oxidation surface can be controlled by the oxidation factor to change the photo responsivity, the photo responsivity will increase with the degree of oxidation. Therefore indium selenide has great potential to make photodetector.
The surface topography and electrical properties of InSe surface are very susceptible to oxidation. The topography of indium selenide after oxidation will become more roughness and the performance of the electrical properties will show more N-type behavior and the bandgap more larger. When the indium selenide oxide reaches a certain degree the surface will eventually produce In2o3. Thus, form a heterogeneous structure between InSe and In2o3. According to other macroscopic measurements, it is speculated that there will be a phenomenon of charge transfer between InSe and its oxide surface.
In order to confirm the above discussion, this study was used by scanning tunneling microscopy to explore the two-dimensional layered semiconductor material InSe surface before and after mechanical exfoliation the formation of the interface junction. And further from the scanning tunneling spectroscopy curves to analysis the microscopic showing of the charge transfer phenomenon at interface junction. This phenomenon is for the oxide layer to capture the electrons where in bottom of the InSe and the holes in the oxide layer will be filled with InSe bulk.
目錄
致謝 i
摘要 iii
Abstract iv
目錄 v
第一章 緒論 1
1-1 硒化銦的基本特性 1
1-2 硒化銦的表面形貌與電性受到氧化後的影響 4
1-3 在表面形成In2O3與InSe形成P-N介面對元件的益處 6
第二章 研究動機 7
第三章 實驗儀器與原理 8
3-1 掃描穿隧顯微鏡(Scanning tunneling microscopy, STM ) 8
3-2 量子穿隧效應(Quantum tunneling effect ) 10
3-3 區域能態密度(Local density of state,LODS) 12
3-4 掃描穿隧能譜 (Scanning tunneling spectroscopy, STS ) 12
3-5 STM的工作掃描模式 15
3-5-1 定電流模式 15
3-5-2 定高度模式 16
3-5-3 電流影像穿隧能譜(Current image tunneling spectroscopy, CITS) 17
3-6 掃描探針製備 18
3-7 超高真空系統 20
3-7-1 真空計 20
3-7-2 真空幫浦 22
第四章 實驗結果與討論 26
4-1-1硒化銦Fresh的方式及示意圖 26
4-1-2硒化銦處理介面接合的方式及示意圖 28
4-2-1硒化銦Fresh前的形貌與電性分析 28
4-2-2硒化銦Fresh後的形貌與電性分析 30
4-2-3硒化銦Fresh/Nonfresh介面接合處的形貌與電性分析 33
4-3針對四個不同區域的電性做定量分析 35
4-4兩兩區域的dI/dV曲線的細節討論 37
4-5四組dI/dV曲線給的結論 40
第五章 實驗討論 41
5-1正負偏壓特徵峰值的討論 41
5-2針對介面接合處的能帶空間解析探討 43
第六章 結論 44
參考文獻 46
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37 Provided by National Taiwan University Professor Chen Chun-Wei’s group
Unpublished.
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