本研究在矽穿孔技術所需化學機械，研磨液以氫氧化鉀、研磨顆粒及乙二胺濃度調整提升平坦化效率及品質，並使用了氫氧化鉀和乙二胺之間交互作用下化學蝕刻的特性，進而選擇化學研磨液的濃度劑量，本實驗主要分成三大部份：第一部份針對矽、銅晶圓靜態蝕刻速率加以探討，使用氫氧化鉀及氫氧化銨互相比較取得最佳飽和曲線並選擇最佳添加濃度，第二部分使用不同濃度研磨顆粒劑量及氫氧化鉀添加至研磨液，並且由pH選擇最佳區間以及經由化學機械研磨得知最佳研磨率便於接下來研磨液配方設計，第三部分由現階段實驗得知最佳氫氧化鉀濃度為2%，後續固定氫氧化鉀2%及乙二胺不同濃度進行矽、銅晶圓靜態蝕刻速率找尋最佳濃度區間，並由靜態蝕刻實驗取得最佳添加研磨液配方，透過實驗設計使用化學機械研磨方式呈現對矽、銅晶圓最佳研磨率。

關鍵字：矽穿孔技術、靜態蝕刻速率、化學機械研磨、研磨率。

In the Through-Silicon Via required chemical polishing slurry, this work uses potassium hydroxide, abrasive particles and ethylenediamine concentrations adjusting to planarizating and quality. This study focuses on the use of potassium hydroxide and ethylenediamine interaction beween the chemical etching of the slurry dosage. The experiment is divided into three major parts: the first part discusses and copper wafer static etching rate sues potassium hydroxide and ammonium hydroxide to compare and each other to get the best saturation curre, imputing the best concentration. The second part uses different concentrations of abrasive particles and potassium hydroxide added to the slurry. We select the best pH interval from chemical mechanical polishing, thus finding out the best remove rate to slurry formula design. The third part clarifies the best potassium hydroxide concentration of 2%, fixed potassium hydroxide 2% and different ethylenediamine concentrations range. Accordingly the static etching experiment obtained gets leads to an optimal slurry formula and experimental design using chemical mechanical polishing to silicon and copper wafers polishing get an optimal remove rate.

Keywords: Through-Silicon Via, TSV, Static etch rate, SER, Chemical mechanical polishing, CMP, Remove rate, R.R.

摘要 I
Abstract II
圖目錄 VI
表目錄 X
第一章 緒論 1
1.1 前言 1
1.2 論文架構 4
1.3 研究動機與目的 6
第二章 文獻回顧 9
2.1 CMP製程與應用 9
2.2 研磨液介紹 17
2.3 各種CMP研磨液之開發 19
2.4 磨粒凝集改質 21
2.5 Cu-KOH 波貝圖 23
2.6 淺溝隔離層研磨液用研磨顆粒之開發 25
2.7 銅製程CMP研磨液開發 27
2.8 SiO2奈米矽溶膠基本介紹 33
2.9 低應力拋光CMP研磨液開發 35
2.10 SiO2奈米矽溶膠及物理化學特性 37
2.11 SiO2奈米矽溶膠製作 39
2.12 3D TSV矽穿孔技術介紹 44
第三章 實驗設備及流程 46
3.1 實驗藥品 46
3.2 實驗儀器 47
3.3 研磨液製備實驗流程 48
3.4 化學機械研磨實驗流程 49
3.5 化學機械晶圓研磨機製程設備 50
3.6 晶圓清洗機 54
3.7 原子力顯微鏡 61
第四章 結果與討論 63
4.1 矽晶圓浸泡NH4OH靜態蝕刻 63
4.2 矽晶圓浸泡KOH靜態蝕刻 66
4.3 銅晶圓浸泡KOH靜態蝕刻 68
4.4 KOH、Abrasives不同濃度對矽晶圓化學機械研磨 72
4.5 乙二胺靜態蝕刻速率 81
4.6 矽、銅晶圓研磨速率 83
第五章 結論及未來研究方向 86
5.1結論 86
5.2未來研究方向 89
參考文獻 90

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