臺灣博碩士論文加值系統

本研究利用MOCVD磊晶以及選擇性摻雜之技術成長高濃度摻雜矽之氮化鎵於發光二極體結構下方，結構依序為P-GaN、多重量子井、N-GaN、N-GaN:Si(多孔隙氮化鎵層)，利用高能量355 nm雷射製作蝕刻走道，定義完成後使用選擇性濕式電化學蝕刻外加適當偏壓形成多孔隙氮化鎵結構，完成後續ITO、金屬電極製程，稱為EC-LED，未經過電化學濕式蝕刻稱為ST-LED。使用FE-SEM以橫截面方向觀察完整磊晶結構，LED結構共有2.17 um， N-GaN之多孔隙平均厚度為2.9 um，孔隙率25%。
電流注入1~40 mA中的光譜中，EC-LED的波長明顯較ST-LED紅移，推斷EC-LED之量子井結構應力增加，在半高寬的表現上，隨著電流的增加，由於熱效應的緣故，ST-LED半高寬均隨著電流變大，EC-LED之熱效應較高電流才出現，EC-LED的半高寬始終小於ST-LED。由拉曼光譜圖中說明多孔隙結構對於氮化鎵層應力釋放是有效果的。藉由低溫電激發光和光激發光螢光光譜中可計算出對於量子井能帶傾斜趨勢，EC-LED之多重量子井結構能帶變小，表示多孔隙結構對於多重量子井之應力是增加的。

第1章、 序論 1
1-1 照明技術發展歷史 2
1-2 發光二極體之發光原理 3
1-3 壓電場(Piezoelectric field) 5
1-4 研究動機 6
第2章、 文獻回顧 7
2-1 電化學濕式蝕刻回顧 7
2-2 奈米多孔隙回顧 9
第3章、 實驗步驟與方法 12
3-1 實驗設計與流程 12
3-2 樣品製備儀器 13
3-2-1 雷射切割系統 (Laser Scribing System) 13
3-2-2 電化學濕式蝕刻系統(Electrochemical Wet Etching System) 14
3-2-3 樣品製備流程 15
3-3 分析儀器與方法 16
3-3-1 光學顯微鏡 16
3-3-2 多功能聚焦離子束系統(Focus Ion Beam , FIB) 17
3-3-3 雷射光激發螢光光譜(Photoluminescence, PL) 18
3-3-4 電激發螢光光譜(Electroluminescence, EL) 19
3-3-5 角度解析光系統 20
3-3-6 低溫探針系統 21
第4章、 實驗結果與討論 22
4-1 光學顯微鏡(OM)觀察電化學蝕刻之表面 22
4-2 多孔隙氮化鎵之綠光發光二極體顯微結構分析 23
4-3 多孔隙之綠光發光二極體光激發螢光光譜分析 24
4-4 氮化鎵綠光發光二極體角度解析電激發螢光光譜分析 25
4-5 多孔隙之綠光發光二極體電激發螢光光譜分析 27
4-6 多孔隙之綠光發光二極體電注入光強度分布分析 29
4-7 拉曼光譜分析(Raman Spectroscopy) 30
4-8 多孔隙之綠光發光二極體變溫偏壓光激與電激光譜 31
第5章、 結論 34
5-1 結論 34
參考文獻 35

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