跳到主要內容

臺灣博碩士論文加值系統

(98.84.18.52) 您好!臺灣時間:2024/10/14 03:51
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:李育懷
研究生(外文):Yu-HuaiLi
論文名稱:(110)晶體取向鋯鈦酸鉛薄膜超結構分析
論文名稱(外文):Structure analysis on superdomains of PbZr(0.2)Ti(0.8) (110)-oriented thin films.
指導教授:楊展其
指導教授(外文):Jan-Chi Yang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:物理學系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2019
畢業學年度:107
語文別:中文
論文頁數:54
中文關鍵詞:鋯鈦酸鉛雷射磊晶複雜性氧化物
外文關鍵詞:ferroelectricsuperdomainsPbZr(0.2)Ti(0.8)O3
相關次數:
  • 被引用被引用:1
  • 點閱點閱:117
  • 評分評分:
  • 下載下載:9
  • 收藏至我的研究室書目清單書目收藏:1
複雜性氧化物由於自身的結構特性可以由不同的氧化物構成二元或以上的氧化物,彼此之間的性質和交互作用都會影響材料本身的性質變化。而鋯鈦酸鉛PbZr(x)Ti(1-x)O3 ( PZT ) 是具有鐵電性的材料,因為材料自身擁有的良好的壓電電荷係數(d33),故自1950年代被發明以來,便在壓電領域上被廣泛的使用,但PZT的研究絕大部分都是在(001)方向上的各種性質變化,以及製備出各種電子裝置(electric device)來進一步應用。

所以在了解成長在STO(001)方向上的特有性質後,我們計畫將其推展到STO(110)方向上來看看會不會有其他不一樣的特徵,進一步可以了解到這個材料基本的性質,像是應力的變化跟自身的原子結構在應力下會如何改變,比較特別的是透過成長時微小的自由能變化可以得到明顯不一樣的特殊薄膜表面相,而解析出擁有細緻條紋的結構是我們想要去探討的部分。

目前在製程上,我們使用脈衝雷射沉積系統(Pulse Laser Deposition) 來製備PZT薄膜;為了確定PZT薄膜的磊晶品質,我們藉由原子力顯微鏡(Atomic force microscopy)來量測薄膜表面,來確保成長過程是良好的層狀磊晶 (Layer-by-Layer growth) ,並進一步透過同步輻射中心的高解析度X-ray diffraction 來量測量薄膜系統上的晶格常數(lattice constant)、reciprocal space mapping 以及Transmission electron microscope的結果來瞭解更深入的。確認好薄膜品質以及原子間可能構成的結構後,在與其他的量測結果互相比較來確定它的結構推論是正確的。
Ferroelectric materials have caught significant attention in the last decade because of its interesting properties like accurately modulates electric polarization of the material by applying external electric field. This way can adjust the lattice constant by the piezoelectric property for the materials. PbZr(x)Ti(1-x)O3 (PZT) was created as a ceramic complex oxide by B. Jeff in 1954. It has an excellent dielectric constant and piezoelectric constant. Thus, researchers have done numerous studies in analysis of the characteristic for PZT grown on the STO (001). The PZT grown on others oriented STO, however, was mentioned less than PZT grown on the STO (001). We discover that there are new thin stripes structure contrary to classical thick stripes(a/c domain structure). In this study, we try to realize the mechanism inside the thin stripes morphology the PZT/STO (110) brings to. We utilized XRD to analyze the lattice structures and knew the arrangement of polarization through PFM. We found the polarization arrangement of superdomains can be modified and created 180o domain walls in a local area by changing the external electric field.
摘要 i
Structure analysis on superdomains of PbZr(0.2)Ti(0.8) iii
第1章 緒論 1
第2章 文獻回顧 3
2-1 鐵電性質簡介 3
2-2 鐵彈性質簡介 7
2-3 ( PbZr (x) Ti (1-x) O3 ) 相關文獻回顧 9
第3章 實驗原理與方法 12
3-1 實驗動機 12
3-2 脈衝雷射沉積系統 15
3-3 X光繞射 ( X-Ray Diffraction ) 20
3-4 掃描式探針顯微鏡 24
3-5 原子力顯微鏡 25
3-6 壓電力顯微鏡(Piezoelectric Force Microscopy,PFM) 27
3-7 P-E 曲線量測 31
3-8 TEM 量測 32
第4章 實驗結果與討論: 34
4-1 PbZr (0.2) Ti (0.8) O3 在(110)上的研究: 34
4-2 壓電力顯微鏡量測: 46
第5章 結論 51
參考文獻 52
[1] N. A. Hill, “Why Are There so Few Magnetic Ferroelectrics?, Phys. Chem. B 104, 6694 (2000).
[2] C. Ederer, N. A. Spaldin, “Recent progress in first-principles studies of magnetoelectric, Current Opinion in Solid State and Materials Science 9, 128 (2005).
[3] T. Kimura, T. Goto, H. Shintani, K. Ishizaka, T. Arima and Y. Tokura, “Magnetic control of ferroelectric polarization, Nature 426, 55 (2003).

[4] N. Ikeda, H. Ohsumi, K. Ohwada, K. Ishii, T. Inami, K. Kakurai, Y. Murakami, K. Yoshii, S. Mori, Y. Horibe and H. Kitô, “Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe2O4, Nature 436, 1136 (2005).
[5] W. Eerenstein, N. D. Mathur and J. F. Scott, “Multiferroic and magnetoelectric materials, Nature 442, 759 (2006).
[6] L. W. Martin, S. P. Crane, Y.-H. Chu, M. B. Holcomb, M. Gajek, M. Huijben, C.-H. Yang, N. Balke and R. Ramesh, “Multiferroics and magnetoelectrics: thin films and nanostructures, J. Phys.: Condens. Matter 20, 434220 (2008).

[7] T. Mitsui, I. Tatsuzaki and E. Nakamura, “An introduction to the physics of ferroelectrics, Gordon and Breach Science Publishers Inc., New York, (1976).
[8] K. Uchino, “Ferroelectric Devices, Marcel Dekker Inc., New York, (2000).
[9] B. Jaffe, W. R. Cook and H. Jaffe, “Piezoelectric Ceramics, Academic Press Inc., London, (1970).

[10]鐘維烈, “鐵電體物理學, 科學出版社, (2000).
[11]K. Aizu, J. Phys. Soc., Japan, 27 (1969), 387
[12] Vinod K. Wadhawan, “Introduction to Ferroic Materials, Taylor & Francis Group, (2000)

[13] Bernard Jaffe, “Piezoelectric Ceramics, Academic Press, (1971)
[14] Y. Li, “Depth profile study of ferroelectric PbZr (0.2) Ti (0.8) O3 films, journal of applied physics, volume 92, number 11, 6762-6767 (2002)
[15] David Walker, “A comprehensive investigation of the structural properties of ferroelectric PbZr0.2Ti0.8O3 thin films grown by PLD, Phys. Status Solidi A 206, No. 8, 1799–1803 (2009)

[16] G. Catalan, “Flexoelectric rotation of polarization in ferroelectric thin films, Nature materials, vol 10, December (2011).
[17] D. G. Schlom, “Strain Tuning of Ferroelectric Thin Films, Annu. Rev. Mater. Res. 37, 589 (2007)
[18] M. Mtebwa, “Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties, AIP ADVANCES 6, 055104 (2016).

[19] H. M. Smith and A. F. Turner. “Vacuum Deposited Thin Films Using a Ruby Laser, Appl. Opt. 4, 147 (1965).
[20] D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Min-Lee, W. L. McLean, and M. Croft, “Preparation of Y‐Ba‐Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material, Appl. Phys. Lett. 51, 619 (1987).
[21] V. J. Morris, A. R. Kirby, A. P. Gunning, “Atomic Force Microscopy for Biologists, Imperial College Press, London, (1999).

[22] 王洸富,“屏蔽電荷對180度域壁成核動態機制之影響, 成功大學, 碩士論文, (2010).

[23]曾賢德、果尚志,“奈米電性之掃描探針量測技術, 物理雙月刊(廿五卷五期), (2003).

[23] Jeol, High angle annular dark field (HAADF), https://www.jeol.co.jp/en/words/emterms/search_result.html?keyword=ABF-STEM, (2019/07/10).

[24] Jeol, Annular bright field (ABF), https://www.jeol.co.jp/en/words/emterms/search_result.html?keyword=ABF-STEM, (2019/07/10).

[25] S. P. Alpay and V. Nagarajan, “Effect of the electrode layer on the polydomain structure of epitaxial PbZr0.2Ti0.8O3 thin films, J. Appl. Phys., Vol. 85, No. 6, 15 March 1999 / 3271-3277
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top