臺灣博碩士論文加值系統

在本實驗中，主要利用MBE在sapphire基板上成長Sb2Se3-Bi2Se3拓樸與一般絕緣體多層系統，優化最上層Bi2Se3使其為拓樸的形貌，並探討其物理特性。
藉由不同製程成長三層系統和多層系統，從AFM觀察最上層Bi2Se3形貌變化，發現會由正交晶系(orthorhombic)變成菱形晶系(rhombohedral)，同時也利用XPS分析，說明最上層Bi2Se3沒有Sb原子摻雜。
我們進一步從電性上探討整體傳輸性質，從Rs量測下，表面皆為拓樸形貌的系統電阻值明顯比單層Bi2Se3低，整體傳輸像是並聯概念，再由PPMS量測發現α值由-0.53上升到-0.96，說明在介面處有多一個通道(channel)，其結果也和Rs相符合。
最後由ARPES分析，表面電子能帶結構明顯有表面態(surface state)存在，再由TEM觀察整體系統的橫截面(cross section)，明顯是由Bi2Se3和Sb2Se3組成。

In this research,We use MBE to grow the topological insulator and ordinary insulator Sb2Se3-Bi2Se3 multiple layer system on the sapphire substrate.We optimize the system to make the top Bi2Se3 become the topological morphology and discuss its physical properties.
The trilayer system and multiple layer system are grown by different fabrication to observe the transformation of the top Bi2Se3’s suface morphology by atomic force microscopy (AFM). It shows that the top Bi2Se3’s suface morphology changes from orthorhombic to rhombohedral.The nonexistence of Sb atom on the top Bi2Se3 is confirmed by X-ray photoelectron spectroscopy (XPS).
We further explore the overall transport properties.From 4-wire measurement,the resistance of the improved system is lower than that of single layer Bi2Se3 because its overall transport is like a parallel circuit.Next,we can get the relation between MRs and B from PPMS measurement.we obtain |α| by fitting relation with HLN equation It apparently rises from 0.53 to 0.96,indicating that there is one more channel at the interface and the result is also consistent with Rs.
Topological surface state of the improved system is comfimed by angle resolved photoemission spectroscopy (ARPES),and then the cross section is obviously composed of Bi2Se3 and Sb2Se3 by Transmission electron microscopy (TEM).Our results demonstrate we grow Sb2Se3-Bi2Se3 multiple layer system and the top Bi2Se3 remains topological characteristics.

摘要 i
Abstract ii
誌謝 viii
目錄 ix
表目錄 xii
圖目錄 xiii
第1章 緒論 1
1-1 介紹 1
1-2 拓樸絕緣體歷史 1
1-3 拓樸絕緣體性質 3
1-4 三維拓樸絕緣體-Bi2Se3 4
1-5 文獻回顧 6
1-5-1 In2Se3-Bi2Se3 異質結構 6
1-5-2 Sb2Se3性質 9
1-5-3 Sb2Se3-Bi2Se3 異質結構 10
1-6 實驗動機 14
第2章 基本原理 16
2-1 薄膜理論 16
2-1-1 沉積原理 16
2-1-2 成長模式 18
2-1-3 晶格匹配度 19
第3章 實驗儀器 20
3-1 分子束磊晶系統(MBE) 20
3-2 實驗量測儀器 24
3-2-1 反射式高能電子繞射儀(RHEED) [1] 24
3-2-2 X-ray繞射儀[33] 25
3-2-3 原子力顯微鏡(AFM) [33] 26
3-2-4 四點電性量測 28
3-2-5 角解析光電子能譜(ARPES) [31] 29
3-2-6 X光電子能譜儀(XPS) [34] 30
3-2-7 物理性質量測系統(PPMS) [35] 31
3-2-8 穿透式電子顯微鏡(TEM)[36] 32
第4章 實驗步驟與流程 33
4-1 真空系統準備 33
4-2 基板製備 33
4-3 樣品成長 34
4-4 元件製作 35
4-4-1 旋轉塗佈儀(Spin Coater) 36
4-4-2 單面光罩對準機(Single Side Mask Aligner) 36
4-4-3 反應離子蝕刻機(Reactive Ion Etcher) 37
4-4-4 電子束蒸鍍機(E-beam Evaporator) 37
第5章 實驗結果與討論 38
5-1 Change top Bi2Se3 temp. to reduce the possible intermixing of two different TI films 40
5-2 Use XPS to check if the existence of sb on the top film 42
5-3 Grow Bi2Se3 buffer to reduce impact of Sb2Se3 43
5-4 Use thin Sb2Se3 to grow trilayer 45
5-5 Combine thin Sb2Se3 and Bi2Se3 buffer to grow trilayer 46
5-6 Grow multiple layer 48
5-7 Rs分析 49
5-8 PPMS分析 50
5-9 ARPES、TEM分析 51
5-10 AFM分析 53
第6章 結論 54
第7章 參考文獻 55

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