臺灣博碩士論文加值系統

隨著物聯網與工業4.0興起，在智慧機械中位於物聯網最底層的振動感測元件(即為加速規)，其可透過接收機械的振動進而產生訊號，經過後端感測電路處理即可以進行即時監控的功能，而市售壓電加速規多為塊材型加速規，其體積大且不容易與CMOS進行整合。市售MEMS加速規多為電容式MEMS加速規，其可用頻寬窄且易受雜訊影響，製程繁雜且良率低，壓阻式加速規常有靈敏度不足且易受溫度影響，因此本研究提出以無鉛壓電材料氮化鋁開發壓電式MEMS加速規，其製程相較於電容式MEMS加速規簡單、良率高、可用頻寬廣以及具有高靈敏度特性，更適合用在智慧機械上，並且無鉛壓電材料對環境污染性低。
微機電(MEMS)製程為CMOS製程的延伸，研究中我們以黃光微影方式定義各層圖案後濺鍍薄膜，以舉離方式進行光阻剝除。c軸優選取向氮化鋁製程中往往需要高溫製程，但光阻耐溫性差，會造成舉離不易，並且高溫製程也無法用於可饒曲式元件製作上，因此本研究將開發一低溫濺鍍製程，後將其應用於MEMS壓電加速規製作。
本研究以直流濺鍍方式製備氮化鋁(AlN)無鉛壓電薄膜於Si/SiO2/Ti/Pt，透過不同溫度變因取得最佳製程參數，並控制製程溫度得以低於元件製程光阻耐熱溫情況下製備c軸優選取向氮化鋁(AlN)，透過XRD、AFM、SEM、TEM、d33等材料分析，將氮化鋁壓電膜應用於MEMS壓電加速規製程，待元件特性量測後，與感測電路進行整合，形成一模組化加速規系統，將模組置於工具機上進行監控測試，以實現智慧機械為最終目標。

In this project, we successfully deposit C axis oriented aluminum nitride piezoelectric films. With various material analysis, it proves that the deposited films have C axis preferred mono crystal as they are deposited at 100℃ dopostion temperature. XPS analysis and fitting prove the aluminum nitride piezoelectric films have strong chemical bonds. The d33 value of proposed films is 5.92pC/N which is better than most of the reported data. The MEMS piezoelectric accelerometers are then made based on the AlN films proposed with lift-off process.
We make two kinds of MEMS accelerometers, cantilever beam type and ring type, for different applications. Finally, the devices are Combined with the sensing circuit to detect the vibration of spindles.

目錄 i
圖目錄 iv
表目錄 vii
第一章 緒論 1
1.1前言 1
1.2研究動機 3
第二章 基礎理論與文獻回顧 5
2.1 壓電材料 5
2.1.1壓電的發現與歷史 5
2.1.2材料晶格與晶系 7
2.1.3正壓電效應 9
2.1.4逆壓電效應 10
2.1.5晶體壓電性根源 11
2.1.6晶體壓電性根源 12
2.1.7 氮化鋁 13
2.1.7 氮化鋁製程 15
2.2 壓電特性參數 16
2.2.1 非壓電材料應力與電場關係式 16
2.2.2 壓電材料應力與電場關係式 17
2.2.3 壓電方程式 19
2.2.3 壓電係數-d值定義 21
2.3 MEMS壓電加加速規 23
2.3.1 MEMS製程介紹 23
2.3.2 MEMS加速規種類 25
2.3.3 MEMS壓電加速規 28
第三章 實驗方法與量測 32
3.1 實驗流程簡介圖 32
3.2 實驗步驟 33
3.2.1 基板製備 33
3.2.2電極濺鍍參數 34
3.2.3 氮化鋁濺鍍參數 35
3.2.2蝕刻阻擋層濺鍍參數 36
3.2.4 MEMS壓電加速規製程 37
3.3 製程量測儀器 40
3.3.1 直流濺鍍系統 40
3.3.2 光罩對準曝光系統 41
3.3.3反應式離子蝕刻系統(STS) 41
3.3.4 活性離子蝕刻系統(ICP) 42
3.3.5 X光繞射分析儀 43
3.3.6 高解析掃描電子顯微鏡SEM 43
3.3.7 原子力顯微鏡(Atomic Force Microscopy) 44
3.3.8 雙束型聚焦離子束(Dual-beam FIB) 44
3.3.9 場發射穿透式電子顯微鏡(TEM) 45
3.3.10 X射線光電子能譜(XPS) 46
3.3.11 振盪量測系統 47
第四章 實驗結果與討論 48
4.1 AlN壓電膜特性 48
4.1.1 以不同基板溫度濺鍍AlN壓電膜晶向探討 48
4.1.2 以不同基板溫度濺鍍AlN壓電膜表面形貌探討 50
4.1.3 以不同基板溫度濺鍍AlN壓電膜俯視SEM探討 52
4.1.4 以不同基板溫度濺鍍AlN壓電膜剖面SEM探討 53
4.1.5 以不同基板溫度濺鍍AlN壓電膜TEM探討 54
4.1.6 以不同基板溫度濺鍍AlN壓電膜Raman探討 56
4.1.7 氮化鋁壓電膜XPS分析 57
4.1.8 以不同基板溫度濺鍍AlN壓電膜對壓電係數d33影響 59
4.2 無鉛壓電MEMS加速規 60
4.2.1無鉛壓電MEMS加速規模擬分析設計 60
4.2.2 懸臂樑型無鉛壓電MEMS加速規特性探討 64
4.2.3 圓盤型無鉛壓電MEMS加速規特性探討 67
4.2.4 圓盤型無鉛壓電MEMS加速規整合電路特性探討 70
4.2.5 無鉛壓電MEMS加速規模組於主軸上實際應用 73
第五章 結論與外來展望 75
5.1 結論 75
5.1.1氮化鋁壓電膜 75
5.1.2 以氮化鋁為壓電層之無鉛壓電MEMS加速規 75
5.1.3 無鉛壓電MEMS加速規模組於主軸實際監測 75
5.2 未來展望 76
第六章 參考文獻 77

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