(3.227.235.183) 您好!臺灣時間:2021/04/14 19:25
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:張碩洋
研究生(外文):Chang, Shuo-Yang
論文名稱:在銻化鎵與磷化銦基板上成長中紅外線量子井結構之光激發螢光特性探討
論文名稱(外文):Photoluminescence study of Mid-Infrared Quantum Wells grown on GaSb and InP substrate
指導教授:林國瑞林國瑞引用關係
指導教授(外文):Lin, Gray
口試委員:林聖迪孫建文
口試委員(外文):Lin, Sheng-DiSun, Kien-Wen
口試日期:2018-08-30
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2018
畢業學年度:107
語文別:中文
論文頁數:54
中文關鍵詞:光激發螢光中紅外線量子井銻化鎵磷化銦
外文關鍵詞:PhotoluminescenceMid-InfraredQuantum WellsGaSbInP
相關次數:
  • 被引用被引用:0
  • 點閱點閱:91
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:18
  • 收藏至我的研究室書目清單書目收藏:0
本篇論文主要致力於中紅外線量子井發光特性的研究,我們利用分子束磊晶在銻化鎵與磷化銦基板上分別成長適當的量子井結構,並藉由光激發螢光實驗進行量測與分析,試圖探討兩種基板材料與量子井結構的發光特性與優缺點。
在激發強度相依的實驗下,我們可以觀察到第一型量子井與第二型量子井之間有著不同的能帶變化現象;而在溫度相依的實驗下,以中心波長隨溫度變化的結果切入,可以發現以磷化銦為基板搭配第二型W量子井結構的試片,受到量子井材料的缺陷所帶來的激子侷限效應有嚴重的影響,使得低溫時的能隙遠低於理想的結果,除此之外,在接近室溫時中心波長隨溫度的變化速率則相對較低,且半高寬明顯較寬。接著,以積分發光強度隨溫度變化的結果進行分析,則可以了解到低溫時束縛激子離開缺陷能態,與高溫時載子逃離量子井,分別為光激螢光強度淬滅的主要因素,且又以銻化鎵為基板搭配第一型量子井結構的試片受溫度的影響較小,導致最終在室溫環境下的光激螢光特性較為優異。
In this thesis we studied the properties of mid-infrared (mid-IR) GaSb-based type-I quantum wells and InP-based w-type quantum wells (QWs). We use temperature dependent and power dependent photoluminescence (PL) measurements to have comprehensive investigation. By PL peak energy as a function of temperature, we can find a perfect fit in GaSb-based type-I QWs, and a big deviation was obtained in InP-based w-type QWs, show a serious excitonic localization effect caused by imperfect QW structures in InP-based w-type QWs.
We also can find the PL quenching mechanism by PL integrated intensity as a function of temperature, there are two different activated process that make PL intensity decrease, one is the delocalization of the bound excitons, and other is the carrier jump over the barrier of QWs. Besides, InP-based w-type QWs show a small value on second activated process, and it indicates that InP-based w-type QWs very sensitive to temperature. So we think by this PL measurement GaSb-based type-I QWs is more suitable at this mid-IR wavelength region.
摘要 I
Abstract II
圖目錄 IV
第一章 緒論 1
1.1 中紅外線的應用與發展 1
1.2 中紅外雷射 3
1.3 研究動機 4
1.4 論文架構 6
第二章 原理 7
2.1 量子系統 7
2.2 量子井 9
2.3 量子井的能帶對準 11
2.3.1 晶格匹配 11
2.3.2 能帶計算 12
2.3.3 應變與能帶變化 15
2.3.4 能帶對準 19
2.4 波函數 22
第三章 實驗結果與討論 25
3.1 試片結構 25
3.2 光激發螢光頻譜量測系統架設 27
3.3 結果討論與分析 29
3.3.1 激發強度相依的光激發螢光頻譜 30
3.3.2 溫度相依的光激發螢光頻譜 35
3.3.3 溫度相依的能隙變化圖 37
3.3.4 光激螢光強度淬滅 40
3.3.5 光激螢光半高寬變化 44
第四章 總結與未來展望 47
參考文獻 50
[1] A. Joullié, P. Christol, A. N. Baranov, and A. Vicet, “Mid-Infrared 2—5 μm Heterojunction Laser Diodes,” Solid-State Mid-Infrared Laser Sources, vol. 89, pp. 1-61, 2003.
[2] A. Krier, “Mid-infrared semiconductor optoelectronics,” Springer Verlag, 2007.
[3] L. S. Rothman, I. E. Gordon, A. Barbe, D. C. Benner, P.F. Bernath, M. Birk, V. Boudon, L.R. Brown, A. Campargue, J. Champion, K. Chance, L.H. Coudert, V. Dana, V.M. Devi, S. Fally, J. Flaud, R.R. Gamache, A. Goldman, D. Jacquemart, I. Kleiner, N. Lacome, W.J. Lafferty, J. Mandin, S.T. Massie, S.N. Mikhailenko, C.E. Miller, N. Moazzen-Ahmadi, O.V. Naumenko, A.V. Nikitin, J. Orphal, V.I. Perevalov, , A. Perrin, A. Predoi-Cross, C.P. Rinsland, M. Rotger, M. Sˇimecˇkova, M.A.H. Smith, K. Sung, S.A. Tashkun, J. Tennyson, R.A. Toth, A.C. Vandaele, and J. Vander Auwera, “The HITRAN 2008 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer, vol. 110, pp. 533-572, 2009.
[4] URL http://www.analyticjournal.de/glossar_beitraege_einzeln/ndir_fotometer.html.
[5] URL http://pharmaxchange.info/press/.
[6] I. Vurgaftman, J. A. Meyer, and L. A. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” Journal of applied physics, vol. 89, pp. 5815-5875, 2001.
[7] A. Bauer, K. Rößner, T. Lehnhardt, M. Kamp, S. Höfling, L. Worschech, and A. Forchel, “Mid-infrared semiconductor heterostructure lasers for gas sensing applications,” Semiconductor Science and Technology, vol. 26, p. 014032, 2010.
[8] W. Lei, and C. Jagadish, “Lasers and photodetectors for mid-infrared 2–3 μm applications,” Journal of Applied Physics, vol. 104, p. 11, 2008.
[9] E. Tournie, and A. N. Baranov, "Mid-infrared semiconductor lasers: a review,” Semiconductors and Semimetals, vol. 86, pp.183-226, 2012.
[10] A. Bauer, F. Langer, M. Dallner, M. Kamp, and M. Motyka, “Emission wavelength tuning of interband cascade lasers in the 3–4 μ m spectral range,” Applied Physics Letters, vol. 95, p. 251103, 2009.
[11] 林建宏, “銻化鎵基第一型砷銻化銦鎵/砷銻化鋁鎵量子井之研究及在中紅外線雷射之應用,” 國立交通大學, 2015.
[12] 潘建宏, “第二型砷化銦鎵/砷銻化鎵 “W” 量子井之光學特性及光激發中紅外線雷射之研究,” 國立交通大學, 2015.
[13] A. S. Okhotin, A. S. Pushkarskii, V. V. Gorbachev, “Thermophysical Properties of Semiconductors,” Atom Publishing House, 1972.
[14] K. Vizbaras, and M. C. Amann, “Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers,” Semiconductor Science and Technology, vol. 27, p.032001, 2012.
[15] C. H. Chang, Z. L. Li, C. H. Pan, H. T. Lu, C. P. Lee, and S. D. Lin “Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate,” Journal of Applied Physics, vol. 115, p. 063104, 2014.
[16] C. H. Chang, Z. L. Li, C. H. Pan, H. T. Lu, C. P. Lee, G. Lin, and S. D. Lin, “Low-threshold short-wavelength infrared InGaAs/GaAsSb ‘W’-Type QW laser on InP substrate,” IEEE Photonics Technology Letters, vol. 27, pp.225-228, 2015.
[17] 盧廷昌, 王興宗, “半導體雷射導論,” 五南出版社, 2008.
[18] I. Vurgaftman, J. A. Meyer, and L. A. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” Journal of Applied Physics, vol. 89, pp.5815-5875, 2001.
[19] C. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Physical Review B, vol. 39, p. 1871, 1989.
[20] M. P. C. M. Krijn, “Heterojunction band offsets and effective masses in III-V quaternary alloys,” Semiconductor Science and Technology, vol. 6, p. 27, 1991.
[21] C. S. Chang, and S. L. Chuang, “Modeling of strained quantum-well lasers with spin-orbit coupling,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, pp.218-229, 1995.
[22] S. Sprengel, G. K. Veerabathran, A. Koeninger, F. Federer, G. Boehm, and M. C. Amann, “InP-based type-II heterostructure lasers for 2.5 µm working CW at room temperature and above,” Semiconductor Laser Conference, vol. 155, pp.44-45, 2014.
[23] S. Jin, Y. Zheng, and A. Li, “Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures,” Journal of Applied Physics, vol. 82, pp.3870-3873, 1997.
[24] N. N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, and D. Bimberg, “Radiative states in type-II GaSb/GaAs quantum wells,” Physical Review B, vol. 52, p.14058, 1995.
[25] K. Biermann, A. Hase, and H. Künzel. “Optical pyrometry for in situ control of MBE growth of (Al, Ga) As1− xSbx compounds on InP,” Journal of Crystal Growth, vol. 201, pp.36-39, 1999.
[26] J. F. Klem, O. Blum, S. R. Kurtz, I. J. Fritz, and K. D. Choquette, “GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, pp. 1605-1608, 2000.
[27] W. Z. Shen, S. C. Shen, W. G. Tang, Y. Zhao, and A. Z. Li, “Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells,” Journal of Applied Physics, vol. 78, pp.5696-5700, 1995.
[28] G. Rainò, A. Salhi, V. Tasco, R. Intartaglia, R. Cingolani, Y. Rouilard, and M. De Giorgi, “Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3 μm,” Applied Physics Letters, vol. 92, p.101931, 2008.
[29] S. Rudin, T. Reinecke, and B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Physical Review B, vol. 42, p. 11218, 1990
連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔