臺灣博碩士論文加值系統

本篇論文主要致力於中紅外線量子井發光特性的研究，我們利用分子束磊晶在銻化鎵與磷化銦基板上分別成長適當的量子井結構，並藉由光激發螢光實驗進行量測與分析，試圖探討兩種基板材料與量子井結構的發光特性與優缺點。
在激發強度相依的實驗下，我們可以觀察到第一型量子井與第二型量子井之間有著不同的能帶變化現象；而在溫度相依的實驗下，以中心波長隨溫度變化的結果切入，可以發現以磷化銦為基板搭配第二型W量子井結構的試片，受到量子井材料的缺陷所帶來的激子侷限效應有嚴重的影響，使得低溫時的能隙遠低於理想的結果，除此之外，在接近室溫時中心波長隨溫度的變化速率則相對較低，且半高寬明顯較寬。接著，以積分發光強度隨溫度變化的結果進行分析，則可以了解到低溫時束縛激子離開缺陷能態，與高溫時載子逃離量子井，分別為光激螢光強度淬滅的主要因素，且又以銻化鎵為基板搭配第一型量子井結構的試片受溫度的影響較小，導致最終在室溫環境下的光激螢光特性較為優異。

In this thesis we studied the properties of mid-infrared (mid-IR) GaSb-based type-I quantum wells and InP-based w-type quantum wells (QWs). We use temperature dependent and power dependent photoluminescence (PL) measurements to have comprehensive investigation. By PL peak energy as a function of temperature, we can find a perfect fit in GaSb-based type-I QWs, and a big deviation was obtained in InP-based w-type QWs, show a serious excitonic localization effect caused by imperfect QW structures in InP-based w-type QWs.
We also can find the PL quenching mechanism by PL integrated intensity as a function of temperature, there are two different activated process that make PL intensity decrease, one is the delocalization of the bound excitons, and other is the carrier jump over the barrier of QWs. Besides, InP-based w-type QWs show a small value on second activated process, and it indicates that InP-based w-type QWs very sensitive to temperature. So we think by this PL measurement GaSb-based type-I QWs is more suitable at this mid-IR wavelength region.

摘要 I
Abstract II
圖目錄 IV
第一章 緒論 1
1.1 中紅外線的應用與發展 1
1.2 中紅外雷射 3
1.3 研究動機 4
1.4 論文架構 6
第二章 原理 7
2.1 量子系統 7
2.2 量子井 9
2.3 量子井的能帶對準 11
2.3.1 晶格匹配 11
2.3.2 能帶計算 12
2.3.3 應變與能帶變化 15
2.3.4 能帶對準 19
2.4 波函數 22
第三章 實驗結果與討論 25
3.1 試片結構 25
3.2 光激發螢光頻譜量測系統架設 27
3.3 結果討論與分析 29
3.3.1 激發強度相依的光激發螢光頻譜 30
3.3.2 溫度相依的光激發螢光頻譜 35
3.3.3 溫度相依的能隙變化圖 37
3.3.4 光激螢光強度淬滅 40
3.3.5 光激螢光半高寬變化 44
第四章 總結與未來展望 47
參考文獻 50

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