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研究生:蔣承庭
研究生(外文):Chiang, Chen-Tin
論文名稱:50奈米鍺量子點/矽鍺殼 N-型金氧半光電晶體之研製與分析
論文名稱(外文):Fabrication and Characterization of 50 nm Ge-QD/SiGe Shell NMOS Phototransistor
指導教授:李佩雯李佩雯引用關係
指導教授(外文):Li, Pei-Wen
口試委員:崔秉鉞林鴻志
口試委員(外文):Tsui, Bing-YueLin, Horng-Chih
口試日期:2019-05-22
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:107
語文別:中文
論文頁數:65
中文關鍵詞:鍺量子點光電晶體
外文關鍵詞:Germanium Quantum DotsPhototransistor
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本論文透過一體成型之鍺量子點技術,應用於金氧半場效電晶體之通道區製作成鍺量子點/二氧化矽/矽鍺殼層之異質結構。同時利用蝕刻機台的參數調變研究,更加優化複晶矽鍺奈米柱的形成。不僅取得適合的蝕刻率,也讓複晶矽鍺奈米柱的輪廓更加陡直,使其在經過選擇性氧化形成鍺量子點時的位置掌控更為熟稔。而鍺量子點與矽鍺殼層間3 ~ 4 nm的二氧化矽則是解決了矽/鍺界面的晶格不匹配同時也作為閘極介電層,並以單晶、品質高的鍺量子點及矽鍺殼層作為光吸收層。閘極金屬則是選用可透光之氧化銦錫作為電極,製作出可垂直入射並適用於850 nm ~ 1550 nm近紅外光的光電晶體。
本論文透過改變矽基板type,從N-type矽改成P-type矽製作出閘氧化層3.5 nm、鍺量子點大小為50 nm的光電晶體。當元件開啟狀態時,不僅光電流提升,以光功率約4.7 nW、3.92 W、87.3 nW,波長850 nm、1310 nm及1550 nm光垂直入射下,光響應度分別為4255.3 A/W、1.58 A/W及38.9 A/W。另外以相同小功率照射所得的光響應度更是較同結構(鍺量子點大小、閘氧化層厚度)下的PMOS元件高出約2.3 ~ 6倍,顯示元件對於近紅外光波段的光響應度相當出色。
In this thesis, we used the technology of Germanium quantum dots in a single process forming to fabricated a heterostructure of Ge Quantum Dots/SiO2/SiGe shell in the channel of a MOSFET. In order to optimize the forming of poly-SiGe pillar, we tune the etcher not only to get the adaptive etching rate and more vertical profile, but also to further control the distribution of Ge quantum dots. The 3-4 nm-thickness SiO2 between Ge QD and SiGe shell acts the gate oxide, solved the lattice mismatch at interface of Si-Ge. For normal incidence optimal transmission and applied to wavelength 850 nm to 1550 nm, we get the single-crystallize, high quality Ge QDs and SiGe shell for absorption layer and use ITO which is transparent as the gate electrode.
We change the type of silicon substrate from N-type to P-type to manufacture 50 nm QD-NMOS with 3.5 nm-thickness gate oxide. At on state, the photocurrent is more higher, in addition, under normal illumination of incident power about 4.7 nW, 3.92 W, 87.3 nW at wavelength of 850 nm, 1310 nm, and 1550 nm, we can get the photoresponsivity that is 4255.3 A/W, 1.58 A/W, and 38.9 A/W, respectively. In other hand, compared with the PMOS device with same condition in other structure parameters, size of Ge QDs and thickness of gate oxide, the photoresponsivity of NMOS is about 2.3 ~ 6 times higher than PMOS. Combine the measurement results above showing that the phototransistor has a great performance in the near-infrared ray regime.
摘要 i
Abstract ii
致謝 iv
目錄 vii
圖次 ix
第一章、簡介與研究動機 1
1-1 光通訊簡介 1
1-2 鍺應用於矽基光元件的優勢 2
1-3 鍺材沉積於矽基板之困難與應用發展 4
1-4 研究動機 6
1-5 研究架構 9
第二章、優化複晶矽鍺柱蝕刻之調變 17
2-1 前言 17
2-2 蝕刻調變之研究動機 18
2-2-1 Coil power/Platen power 調變 19
2-2-2 腔體壓力調變 19
2-2-3 蝕刻氣體比例調變 20
2-3 調變結果與應用 20
第三章、鍺量子點光電晶體元件製作流程 27
3-1 前言 27
3-2 元件製作流程 27
第四章、鍺量子點場效光電晶體量測結果與分析 43
4-1 前言 43
4-2 元件光電特性量測 43
4-2-1 未照光之電特性 43
4-2-2 照光後之電特性 44
4-3 元件照光特性分析 45
4-4 電性分析與討論 47
第五章、總結與未來展望 58
參考文獻 59
Vita 65
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