承襲先前對於超薄矽晶太陽電池的元件模擬結果與經驗，試以高電子親和力與寬能隙的透明導電膜(TCO)如結晶態ITO取代Si，但因其非p-n接面，我們使用的PC-1D軟體無法進行模擬。因此轉而以p-CIS/n-TCO太陽電池元件結構為研究對象，先以n-AZO結合InSe，利用n-AZO/i-InSe/p-CIS的元件結構進行模擬以與先前n-Si/p-Si/p-InSe/p-CIS元件模擬結果做比較，由於能帶結構中價帶與導帶產生更大的落差使CIS主吸收層的電子電洞可以迅速分離，因此該元件最佳發電效率為33.6% (Voc=0.815V, Isc=51.5mA, FF=80.1%)；再以更高能隙且電阻率更低的非晶態ITO與CIS形成n-p接面，最佳發電效率為35.8% (Voc=0.805V, Isc=51.6mA, FF=86.2%)。上述的模擬是以單晶CIS的電性數據代入並設定界面之載子復合速率為0 cm/s的計算結果，然而CIS磊晶技術尚未成熟，以現有的多晶CIS電性數據代入n-ITO/p-CIS元件結構則發電效率顯著降低至14% (Voc=0.629V, Isc=27.7mA, FF=83.2%)。若考慮界面複合速率的影響，其值由104cm/s提高到107cm/s時元件發電效率由13%降至4%。在元件製作方面，我們在鈉玻璃基板上依序鍍上Mo/p-CIS/n-ITO/Al的薄膜曡層，經過一些製程的改良包括Mo雙層膜的應力調整、摻加Sb改善CIS表面平整度等，在連續四次實驗中均未能獲致應有的元件特性。除了各層材料光電性質尚未能精確掌控，ITO/CIS界面性質也會是重要關鍵，若能在CIS先形成同質接面，我們的元件模擬顯示此法有助於元件製作的成功率。

Based on previous experience learned from our simulation on the ultrathin Si solar cells, we intend to use a transparent conductive oxide (TCO) with high electron affinity such as crystalline ITO to replace Si but the PC-1D simulation tool cannot run for the device structure which is not a p-n junction. Our focus is then turn to study the p-CIS/n-TCO junction devices. At first, a simulation was done for the n-AZO/i-InSe/p-CIS device structure for a comparison with our previous simulation result on the n-Si/p-Si/p-InSe/p-CIS structure. An energy conversion efficiency of 33.6% (Voc=0.815V, Isc=51.5mA, FF=80.1%) was obtained which was slightly higher than that of the previous structure. It was attributed to a higher band offset at the AZO/CIS interface which was more effectively to separate the electro-hole pairs caused by optical absorption. Further simulation using amorphous ITO with a higher bandgap and lower resistivity than those of AZO, the efficiency was increased to 35.8% (Voc=0.805V, Isc=51.6mA, FF=86.2%). The above simulations were based on the superior properties of single-crystalline CIS and the assumption on an ideal interface and surface (i.e. carrier recombination velocity is 0 cm/s). By using the material properties of polycrystalline CIS for simulation, the efficiency was considerably reduced to 14% (Voc=0.629V, Isc=27.7mA, FF=83.2%). Further investigation on the effect of carrier recombination velocity, the efficiency was decreased from 13% to 4% if the carrier recombination velocity varied from 104cm/s to 107cm/s. In this work, the devices were fabricated by sequentially depositing thin films of Mo/p-CIS/n-ITO/Al on soda-lime glass substrates and evaluated their device properties. Unfortunately, we were not able to succeed to attain a working device in four experiments, even through the adjustment of the stress in the bilayer Mo films and the improvement in the surface smoothness by surfactant modified growth of CIS with Sb. We noted that the precise control of the film properties and the modification of interface properties are crucial to realize a device with excellent performance. Our simulation also indicated that a buried CIS homojunction formed bellow the ITO layer might improve the device yield.

論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vii
表目錄 xi
第一章 緒論 1
1-1 太陽電池簡介 1
1-2 新型矽晶太陽電池元件設計 6
1-3 研究動機與目的 9
第二章 文獻回顧 10
2-1 CuInSe2材料性質 10
2-2 CuInSe2薄膜成長機制 14
2-3 InSe材料性質 15
2-4 透明導電膜(TCO) 16
2-4-1 AZO材料性質與參數 16
2-4-2 ITO材料性質與參數 18
2-5 Mo背電極 21
第三章 實驗規劃及分析方法 22
3-1 實驗規劃及實驗流程 22
3-2 基板清洗 24
3-3 元件製備 24
3-3-1 CuInSe2薄膜製備 25
3-3-2 電極、透明導電層製備 28
3-4 分析方法 30
3-4-1 X光繞射儀(x-ray diffraction) 30
3-4-2 四點探針(Four point probe) 33
3-4-3 穿透光譜儀(Transmission spectrometers) 34
3-4-5 電流電壓特性曲線量測(I-V measurement) 35
3-4-6 場發射掃描電子顯微鏡(Scanning Electron Microscope) 35
3-4-7 PC1D模擬軟體 36
第四章 模擬結果與分析 37
4-1 n-AZO/i-InSe/p-CIS元件設計 38
4-1-1材料載子濃度與載子遷移率之對應關係 40
4-1-2元件模擬結果與討論 41
4-2 n-ITO/p-CIS元件設計 46
4-2-1 n-ITO載子濃度與載子遷移率之對應關係 47
4-2-2 元件模擬結果與討論 48
4-3 n-ITO/poly p-CIS元件設計 53
4-3-1 元件模擬結果與討論 54
4-4 界面複合速率之影響 57
4-4-1 元件模擬與討論 58
第五章 實驗結果與分析 60
5-1 Mo背電極與透明導電膜的鍍製 60
5-2 P型CIS薄膜之製備與量測 62
5-3 CIS太陽電池之前製 64
5-4 實際元件製成與量測 65
5-4-1 n-AZO/p-CIS元件 65
5-4-2 n-ITO/p-CIS元件no.1 69
5-4-3 n-ITO/p-CIS元件no.2 71
5-4-4 n-ITO/p-CIS:Sb元件 76
第六章 結論 82
參考資料 85

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