|
R. F. Davis, J. W. Palmour, J. A. Edmond, "A review of the status of diamond and silicon carbide devices for high-power -temperature and -frequency applications", IEDM, pp. 785-788, 1990. B. J. Baliga, "Power semiconductor device figure of merit for high- frequency applications", Electron Device Letters, vol. 10, no. 10, pp. 455-457,1989. S. Nakamura, Y. Harada, M. Seno, "Novel metalorganic chemical vapor deposition system for GaN growth", Appl. Phys. Lett., vol. 58, pp. 2021-2023, 1991. A. Y. Cho, K. Y. Cheng, "Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devices", Appl. Phys. Lett., vol. 38, pp. 360-362, 1981. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, J. S. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", J. Appl. Phys., vol. 88, no. 4, pp. 1855-1-1855-6, 2000. Brian M. McSkimming, Catherine Chaix, and James S. Speck, "High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy ", Journal of Vacuum Science & Technology, A 33, 05E128, 2015 G. Koblmuller, P. Pongratz, R. Averbeck, and H. Riechert, "Nucleation Phenomena during Molecular Beam Epitaxy of GaN Observed by Line-of-Sight Quadrupole Mass Spectrometry ", phys. Stat, vol.194, no. 2, pp. 515–519, 2002. S. Fernández-Garrido, G. Koblmüller, E. Calleja, and J. S. Speck, "In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction ", J. Appl. Phys. 104, 033541, 2008 E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", J. Appl. Phys., vol. 82, pp. 5472-5479, 1997. Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J. DeJaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.-C. Grattepain, R. Aubry, S. Delage, "MBE growth of AlGaN/GaN HEMTS on resistive Si (111) substrate with RF small signal and power performances", J. Cryst. Growth, vol. 251, pp. 811-815, 2003. L. Esaki, " New phenomenon in narrow germanium p–n junctions ", Phys. Rev., vol. 109, no. 2, pp. 603-604, Jan. 1958. John Simon, Ze Zhang, Kevin Goodman, Huili Xing, Thomas Kosel, Patrick Fay, and Debdeep Jena, "Polarization-Induced Zener Tunnel Junctions inWide-Band-Gap Heterostructures, "PRL 103, 026801, 2009 Sriram Krishnamoorthy, Thomas F. Kent, Jing Yang, Pil Sung Park, Roberto C. Myers, and Siddharth Rajan, "GdN Nanoisland-Based GaN Tunnel Junctions ", Nano Lett.,13,pp. 2570−2575, 2013. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang, and Siddharth Rajan, "Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance ", Appl. Phys. Lett. 108, 131103, 2016 T. Takeuchi, G. Hasnain, M. Hueschen, C. Kocot, M. Blomqvist, Y.-L. Chang, D. Lefforge, R. Schneider, M. R. Krames, L. W. Cook, S. A. Stockman, "GaN-based light emitting diodes with tunnel junctions", Jpn. J. Appl. Phys., vol. 40, pp. L861-L863, 2001. S. R. Jeon, M. S. Cho, M.A. Yu and G. M. Yang, "GaN-based light-emitting diodes using tunnel junctions", IEEE J. of Selected Topics in Quantum Electron., Vol. 8, No. 4, pp. 739-743, 2002. Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan, "InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes ", Appl. Phys. Lett. 105, 141104, 2014 Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, and Siddharth Rajan, "Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions ", Appl. Phys. Lett., vol. 109, 121102, 2016 M. F. Schubert, "Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact", Appl. Phys. Lett., vol. 96, no. 3, pp. 031102-1-031102-3, 2010. M. Malinverni, D. Martin, and N. Grandjean, "InGaN based micro light emitting diodes featuring a buried GaN tunnel junction ", Appl. Phys. Lett.,vol. 107, 051107, 2015 B. P. Yonkee, E. C. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, "Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction", Appl. Phys. Lett., vol. 109, pp. 191104, 2016. H. Yamaguchi, M. Kawashima, and Y. Horikoshi, “Migration-enhanced epitaxy” , Appl. Surf. Sci., vol. 33–34, pp. 406–412, 1988. Yuen-Yee Wong, Edward Yi Chang, Yue-Han Wu, Mantu K. Hudait, Tsung-Hsi Yang, Jet-Rung Chang, Jui-Tai Ku, Wu-Ching Chou, Chiang-Yao Chen, Jer-Shen Ma, and Yueh-Chin Lin, "Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy ", Thin Solid Films, pp. 6208–6213, 2011 F. A. Faria, J. Guo, P. Zhao, G. Li, P. K. Kandaswamy, M. Wistey, H. G. Xing, D. Jena, "Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy", Appl. Phys. Lett., vol. 101, no. 3, pp. 032109, 2012. F. Sacconi, A. D. Carlo, P. Lugli, and H. Morkoç, “Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN–GaN heterojunction modulation doped FETs,” IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 450–457, 2001 I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra., "AlN/GaN and (AlGa)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", J. Appl. Phys., vol. 90, no. 10, pp. 5196-5201, 2001. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., vol. 85, no. 6, pp. 3222, 1999. J.-K. Kim, J.-L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, T. Kim, "Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment", Appl. Phys. Lett., vol. 73, no. 20, pp. 2953-2955, 1998. F. Lee, L.-Y. Su, C.-H. Wang, Y.-R. Wu, J. Huang, "Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors", IEEE Electron Device Lett., vol. 36, no. 3, pp. 232-234, 2015. S. K. Cheung, N. W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics", Appl. Phys. Lett., vol. 49, no. 2, pp. 85-87, 1986. W. Lim, J.-H. Jeong, J.-H. Lee, S.-B. Hur, J.-K. Ryu, K.-S. Kim, T.-H. Kim, S. Y. Song, Y.-I. Yang, S. J. Pearton, "Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes", Appl. Phys. Lett., vol. 97, pp. 242103, 2010. Geng-Yen Lee, Hsueh-Hsing Liu, and Jen-Inn Chyi, "High-Performance AlGaN/GaN Schottky Diodes with an AlGaN/AlN Buffer Layer", IEEE Electron Device Lett., vol. 32, no. 11, pp. 1519-1521, 2011. Liang-Yu Su, Finella Lee, and Jian Jang Huang, "Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer", IEEE Trans. Electron Devices, vol. 61, no. 2, 2014.
|