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研究生:嚴名豪
研究生(外文):Yen, Ming-Hao.
論文名稱:以分子束磊晶再成長之氮化鋁鎵/氮化鎵蕭特基二極體研究
論文名稱(外文):Study on AlGaN/GaN Schottky Barrier Diode by Molecular Beam Epitaxy Regrowth
指導教授:黃智方
指導教授(外文):Huang, Chih-Fang
口試委員:盧向成吳添立
口試委員(外文):Lu, Shiang-ChenWu, Tian-Li
口試日期:2019-03-26
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:107
語文別:中文
論文頁數:59
中文關鍵詞:分子束磊晶穿隧接面
外文關鍵詞:Molecular Beam EpitaxyTunnel Junction
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本實驗中探討分子束磊晶系統再成長高濃度N型氮化鎵的四種方法,分別為直接成長法、遷移增強磊晶法、矽增強磊晶法和鎵金屬調整磊晶法,隨著不同方法的使用,濃度有逐漸提升的趨勢,其中鎵金屬調整法摻雜濃度可到1.04x1019 cm-3,此為上述方法可達到的最高濃度。在成長過程可透過III/IV比例去控制成長環境為二維或三維成長,這個比例為控制表面平坦度的關鍵。
使用分子束磊晶再成長高濃度N型氮化鎵於P GaN cap layer AlGaN/GaN上,並進一步實驗在元件上的可能性。由於高濃度摻雜的P型氮化鎵層和高濃度摻雜的再成長N型氮化鎵層,兩者接觸會形成穿隧接面,此接面有助於電流的傳導。量測再成長高濃度N型氮化鎵於P-GaN/AlGaN/GaN側向蕭特基二極體元件,大部份的元件On/Off ratio皆可以達到107~108,在10V時順向電流可達48 mA,且有0.79 A/mm的電流密度。再進一步進行崩潰電壓的量測,水平崩潰電壓可達405 V,垂直崩潰電壓則可達568 V。
In this study, the regrowth of high doping concentration N type GaN by molecular beam epitaxy was investigated. Four different growth conditions were used to improve the doping concentration including base line growth, migration enhanced epitaxy, Si enhanced epitaxy and Ga adjusted epitaxy. It is observed that the concentration is dramati-cally improved with different methods. Ga adjusted epitaxy can en-hance the concentration up to 1.04x1019 cm-3, which is the highest among these conditions. The III/V ratio was controlled to make the GaN film grown in 2-dimention or 3-dimention mode, which has a profound effect on the surface flatness.
The regrowth of a high doping concentration N type GaN was then applied on P type GaN cap layer on AlGaN/GaN to further explore it possibility on device performance. According to the high doping con-centrations of the P type GaN cap layer and the N type GaN regrowth layer, it is possible to form a tunnel junction in the device structure, which is beneficial for current conduction. From measurement results of fabricated regrowth N+ on P-GaN/AlGaN/GaN lateral SBDs, an on/off ratio greater than 107~108 order can be achieved. The best device shows 48 mA forward current at 10V, corresponding to a current density of 0.79 A/mm. The measured horizontal breakdown voltage and vertical breakdown voltage are 405 and 568V separately.
中文摘要 I
Abstract II
目錄 III
表目錄 V
圖目錄 VI
第一章 序論 1
1.1前言 1
1.2文獻回顧 3
1.2.1磊晶成長 3
1.2.2穿隧接面及應用 5
1.3研究方向簡介與論文架構 15
1.3.1研究方向簡介 15
1.3.2論文架構 16
第二章 MBE磊晶及電性量測 17
2.1分子束磊晶系統成長 17
2.1.1 N Type GaN成長過程 17
2.1.2磊晶試片電性量測 18
第三章 元件介紹與光罩設計 24
3.1氮化鋁鎵/氮化鎵異質結構介紹 24
3.1.1自發性極化效應 24
3.1.2壓電性極化效應 25
3.2元件介紹 26
3.3穿隧接面與光罩設計 27
第四章 元件製作流程 32
4.1穿隧接面SBD元件 製程步驟 32
4.2有機溶劑清洗晶片 33
4.3蝕刻對準記號(Mask1) 33
4.4深蝕刻(Mask2) 35
4.5表面處理 37
4.6底部金屬(Mask3) 37
4.7快速熱退火 38
4.8頂部金屬(Mask4) 39
第五章 元件量測結果分析 40
5.1 TLM量測 41
5.1.1蝕刻深度 41
5.1.2二維電子氣TLM量測 43
5.1.3 N GaN TLM量測 45
5.2電壓電流特性 46
5.2.1正向反向量測分析 46
5.2.2電流密度與理想因子 48
5.2.3變溫量測 50
5.3崩潰特性 52
5.3.1水平崩潰特性 52
5.3.2垂直崩潰特性 53
第六章 結論與未來工作 55
參考文獻 56
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