臺灣博碩士論文加值系統

本論文使用微波輔助合成法所製備之p型二硫化鉬(p-type Molybdenum disulfide, p-MoS2)量子點(quantum dots, QDs),製作Al/p-MoS2 QDs/Al之金屬-半導體-金屬(metal-semiconductor-metal, MSM) 光偵測元件。元件分別以波長為325 nm、405 nm、532 nm及808 nm的雷射照射後，在3 V的偏壓下，光響應度分別為9.29 mA/W、6.32 mA/W、5.09 mA/W、0.87 mA/W，且光電流對於入射光功率密度的關係經擬合後，呈現線性的依賴關係。最後為了瞭解元件在高溫下的應用，我們改變了操作溫度，發現隨著溫度的增加，元件的光暗電流比將隨之下降。

In this work , the p-type molybdenum disulfide (p-MoS2) quantum dots (QDs) prepared by microwave-assisted synthesis were used to fabricate Al/p-MoS2 QDs/Al metal-semiconductor-metal (MSM) photodetors (PDs). The MSM QDs were irradiated with lasers with wavelengths of 325 nm, 405 nm, 532 nm and 808 nm respectively, at a bias voltage of 3V , and the photoresponsivity was found to be 9.29 mA/W、6.32 mA/W、5.09 mA/W、0.87 mA/W, respectively. And the relationship between the photocurrent and the power density of the incident light was fitted and exhibited an linear dependence. For the temperature dependent photoresponse, it was found that, the photo-to-dark current ratio of the PDs decreased with the increase of ambient temperatures.

中文摘要 I
Abstract II
致謝 III
圖目錄 VI
表目錄 VIII
第一章 緒論 1
第二章 工作原理與文獻回顧 2
2-1光偵測器的工作原理 2
2-1.1半導體光偵測器原理與介紹 2
2-1.2光偵測器類型 2
2-1.3光偵測器之重要參數 5
2-2文獻回顧 7
2-2.1金-半結構光偵測器 7
2-2.2金-半-金結構光偵測器 8
2-3二維材料特性 9
2-4二硫化鉬材料 11
第三章 實驗及儀器介紹 12
3-1實驗介紹 12
3-2實驗材料 12
3-3實驗步驟 12
3-3.1基板清洗 12
3-3.2二硫化鉬量子點製作 13
3-3.3光偵測器元件製作及量測 14
3-4實驗設備與量測儀器介紹 15
3-4.1熱蒸鍍機(Thermal coater) 15
3-4.2光激發螢光光譜(Photoluminescence,PL) 15
3-4.3穿透式電子顯微鏡(TEM) 16
3-4.4電流-電壓關係量測系統(Current-Voltage relationship) 18
第四章 結果與討論 19
4-1摻雜組胺酸二硫化之吸收光譜(absorbance spectra) 19
4-2 MoS2 QDs之光激發螢光光譜(Photoluminscence,PL) 21
4-3電流-電壓曲線(I-V curve)分析 23
4-4不同照光波長下之電流-電壓曲線圖 25
4.5不同溫度下之元件電性分析 28
4-6不同入射光功率密度下之元件電性分析 33
第五章 總結 41
參考文獻 42

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