本論文分為二部分，第一部分探討石墨烯堆疊不同層數於氮化矽基板結構之氨氣感測器，並進行物性及電性之分析；第二部分探討二硫化銅銦量子點-石墨烯複合奈米結構之氨氣感測器，並進行物性及電性之分析。

本研究第一部分重點是使用不同層數石墨烯以及電漿後處理石墨烯之氨氣感測器，研究發現使用電漿後處理會使得石墨烯表面之比表面積增加，增強其氨氣感測特性，與石墨烯氨氣感測器(2.98%)相比，基於電漿後處理石墨烯氨氣感測器顯示出極高的氨氣響應特性(26.06%)。主要原因是透過電漿後處理之石墨烯誘導了更多的活性位以吸附更多的氧氣。

在第二部分中，首次使用二硫化銅銦量子點-石墨烯複合奈米結構，並研究其複合結構及其氨氣感測特性。透過複合石墨烯，本研究發現二硫化銅銦量子點的氨氣感測特性，並利用二硫化銅銦量子點的光特性使得基於二硫化銅銦量子點-石墨烯複合奈米結構氨氣感測器具有23.65%優異的氨氣感測特性，其高於二硫化銅銦量子點氨氣感測器(0.87%)以及石墨烯氨氣感測器(2.98%)。主要原因是二硫化銅銦量子點-石墨烯複合奈米結構具有優異的複合性能以及結構表面缺陷形成的氧空位，實現了高靈敏度的氨氣響應特性。

Highly sensitive within low threshold limit detection of ammonia (NH3) at room temperature is essential for appropriate environmental monitoring because NH3 is dangerous to the environment when it exceeds 25ppm limit in air. Since NH3 could be fuel replacement option and several uses in agriculture and industrial applications thus monitoring ammonia is extremely important to avoid any health hazards. For that reason, it is highly important to fabricate highly sensitive multifunctional NH3 sensors that can sense low ppm of NH3. It’s also important to sense the flammable NH3 in low operation temperature with stability for lower power consumption. In this context, graphene (Gr) based materials are highly promising multifunctional nanomaterial in several applications, especially have demonstrated noteworthy progress in gas sensing applications. Herein, we report highly enhanced NH3-gas-sensing properties of plasma post treated graphene materials and subsequently the graphene and CuInS2 were combined for the first time to achieve high NH3-gas sensitivity in room temperature.
First section of this study focus on the fabrication of NH3 gas sensors using different layer Gr with plasma post-treatment (Gr-plasma post-treatment). The systematic investigations were revealed that using plasma post-treatment to increase the specific surface area of Gr, strongly influence the gas sensing performance. The Gr with plasma post-treatment based gas sensor shows superb enhancement in ammonia sensitivity of 26.06% comparing to Gr gas sensor (2.98%). It is believed that the plasma post-treatment onto Gr induces more active sites for the adsorption of O2.
In the second section, for the first time, we develop novel nanostructure using CuInS2-Gr composite structures and studied their structural and gas sensing properties. For the first time the gas sensing behavior of CuInS2 is discovered with hybridization of Gr. Interestingly, CuInS2-Gr hybrid composites possess excellent gas sensing response of 23.65%, which is overwhelmingly higher than bare CuInS2 (0.87%), bare Gr and CuInS2-Gr (4.30%). The highly enhanced NH3 sensing properties achieved due to the excellent hybridization properties and formation of structural oxidized surface defects in CuInS2-Gr nanohybrids. These results indicate the noteworthy progress for the fabrication of new generation NH3 sensors.

目錄
中文摘要 I
英文摘要 II
致謝 III
目錄 V
圖目錄 X
表目錄 XVIII

第一章 緒論 1
1.1 前言 1
1.2 研究動機 3

第二章 文獻探討 4
2.1 二硫化銅銦材料特性簡介 4
2.1.1三元化合物半導體特性 4
2.1.2二硫化銅銦晶體結構特性 4
2.1.3二硫化銅銦之製備方法 5
2.2 石墨烯特性簡介 9
2.2.1石墨烯的基本性質與結構 9
2.2.2石墨烯成長機制與製備方法 11
2.3 氣體感測器介紹 17
2.3.1金屬氧化物半導體型 17
2.3.2電化學固態電解質型 18
2.3.3觸媒燃燒型 18
2.3.4表面聲波型 19
2.4 石墨烯與氨氣感測 21

第三章 實驗方法 22
3.1 實驗設計與流程 22
3.2 製備之材料介紹 24
3.3 基板清洗 25
3.4 水相溶液法(Aqueous solution-processed)合成二硫化銅銦量子點 26
3.5 化學氣相沉積法成長石墨烯 27
3.5.1 銅箔前處理 27
3.5.2 石墨烯成長參數 28
3.6 石墨烯轉移之基本步驟 30
3.7 儀器設備與材料分析方法 33
3.7.1 場發射掃描式電子顯微鏡(FE-SEM) 33
3.7.2 能量分散光譜儀(Energy Dispersive Spectrometer，EDS) 34
3.7.3 場發射穿透式電子顯微鏡(FE-TEM) 34
3.7.4 X射線繞射儀(X-ray diffraction，XRD) 35
3.7.5 拉曼光譜儀(Raman spectrum) 36
3.7.6光激發螢光光譜儀(Photoluminescence，PL) 37
3.7.7紫外光-可見光/近紅外光分析儀(Ultraviolet-Visible/NIR spectroscopy，UV-Vis/NIR) 38
3.7.8原子力顯微鏡(Atomic force microscope, AFM) 39
3.7.9高真空量測系統(Gas sensor，GS) 40

第四章 石墨烯堆疊不同層數於氮化矽基板結構之氨氣感測 41
4.1 氫電漿後處理單層石墨烯轉移至氮化矽基板之製作及特性分析 41
4.1.1 單層石墨烯/氮化矽基板之表面型態分析 41
4.1.2 不同瓦數及時間氫電漿後處理於單層石墨烯/氮化矽基板之表面型態分析 42
4.1.3 拉曼光譜儀分析 46
4.1.4 光激發螢光頻譜儀分析 48
4.1.5 氫電漿後處理於單層石墨烯/氮化矽基板之氨氣感測分析 49
4.2 氫電漿後處理雙層石墨烯轉移至氮化矽基板之製作及特性分析 53
4.2.1 雙層石墨烯/氮化矽基板之表面型態分析 53
4.2.2 不同瓦數及時間氫電漿後處理於雙層石墨烯/氮化矽基板之表面型態分析 54
4.2.3 拉曼光譜儀分析 58
4.2.4 光激發螢光頻譜儀分析 60
4.2.5氫電漿後處理於雙層石墨烯/氮化矽基板之氨氣感測分析 61
4.3 氧電漿後處理雙層石墨烯轉移至氮化矽基板之製作及特性分析 65
4.3.1 雙層石墨烯/氮化矽基板之表面型態分析 65
4.3.2 不同時間氧電漿後處理於雙層石墨烯/氮化矽基板之表面型態分析 66
4.3.3 拉曼光譜儀分析 69
4.3.4 光激發螢光頻譜儀分析 71
4.3.5 氧電漿後處理於雙層石墨烯/氮化矽基板之氨氣感測分析 72
4.4 兩次氫電漿後處理雙層石墨烯轉移至氮化矽基板之製作及特性分析 75
4.4.1 雙層石墨烯/氮化矽基板之表面型態分析 75
4.4.2 不同時間兩次氫電漿後處理於雙層石墨烯/氮化矽基板之表面型態分析 76
4.4.3 拉曼光譜儀分析 79
4.4.4 光激發螢光頻譜儀分析 81
4.4.5 兩次氫電漿後處理於雙層石墨烯/氮化矽基板之氨氣感測分析 82

第五章 二硫化銅銦量子點-石墨烯複合奈米結構之氨氣感測 87
5.1 不同滴量二硫化銅銦量子點之特性分析 87
5.1.1 不同滴量二硫化銅銦/氮化矽基板之表面型態分析 87
5.1.2 X-ray繞射儀分析 89
5.1.3 拉曼光譜儀分析 90
5.1.4 光激發螢光頻譜儀分析 91
5.1.5 紫外-可見光分光分析 92
5.1.6 二硫化銅銦之氨氣感測分析 93
5.2 不同轉速二硫化銅銦量子點之特性分析 95
5.2.1 不同轉速二硫化銅銦/氮化矽基板之表面型態分析 95
5.2.2 X-ray繞射儀分析 97
5.2.3 拉曼光譜儀分析 98
5.2.4 光激發螢光頻譜儀分析 99
5.2.5 紫外-可見光分析 100
5.2.6 二硫化銅銦之氨氣感測分析 101
5.3 二硫化銅銦量子點-石墨烯複合奈米結構之特性分析 105
5.3.1 二硫化銅銦-石墨烯複合奈米結構之表面型態分析 105
5.3.2 二硫化銅銦-石墨烯複合奈米結構之場發射穿透式顯微鏡分析 108
5.3.3 X-ray繞射儀分析 109
5.3.4 拉曼光譜儀分析 110
5.3.5 光激發螢光頻譜儀分析 112
5.3.6 紫外-可見光分光分析 113
5.3.7 二硫化銅銦-石墨烯複合奈米結構之氨氣感測分析 114
5.3.8 不同光源發光二極體對於二硫化銅銦-石墨烯複合奈米結構之氨氣感測分析 118

第六章 結論與未來展望 128
6.1 結論 128
6.2 未來展望 131

參考文獻 132

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