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研究生:邱上峰
研究生(外文):Shang-Fong Chiu
論文名稱:富勒烯複合拋光液應用於電致動力輔助銅化學機械拋光研究
論文名稱(外文):Analysis on Compound Slurry with Inclusion Complex of Beta-Cyclodextrin/C60 for Electro-Kinetic Force Assisted Copper Chemical Mechanical Planarization
指導教授:陳炤彰陳炤彰引用關係
指導教授(外文):Chao-Chang Chen
口試委員:蔡志成劉顯光朱瑾郭俞麟陳炤彰
口試委員(外文):Jhy-Cherng TsaiHsien-Kuang LiuJinn ChuYu-Lin KuoChao-Chang Chen
口試日期:2019-07-31
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:機械工程系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:107
語文別:中文
論文頁數:137
中文關鍵詞:電致動力輔助化學機械拋光富勒烯環糊精銅導線圖案化晶圓
外文關鍵詞:EKF-CMPFullereneCyclodextrinCopper wirePatterned wafer
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隨著積體電路(Integrated Circuit, IC)迅速發展演進,晶圓上金屬導線之線寬隨科技發展越來越小,在微型化發展過程中,為達金屬導線線寬微小化之目的,則需進行高解析度之微影製程,晶圓表面必須為極平坦的表面,因此化學機械化拋光(Chemical Mechanical Polishing/ Planarization, CMP)被廣泛應用於平坦化製程。本研究主要對磷酸基底之銅化學機械拋光液進行改良,並以水溶性之富勒烯/環糊精絡合物為磨粒與傳統奈米二氧化矽進行化學機械平坦化之研究。以弱酸性(pH 5)之拋光液配方延伸探討其中性(pH 7)及鹼性(pH 9)環境下的拋光表現,並對拋光液中的成分濃度進行調整,最後加入富勒烯水溶液完成拋光液備製。以動電位極化曲線分析不同濃度配方拋光液之腐蝕電位,探討與表面品質及移除率之間關係。最後,透過本實驗室所開發之電制動力輔助化學機械平坦化製程(Electro Kinetic Force Assisted CMP, EKF-CMP)對比傳統CMP製程之成效。實驗結果顯示,此改良後拋光液於中性拋光液拋光後,銅膜晶圓表面粗糙度降低50%,平均粗糙度(Sa) 約達 2 nm,並提升30%材料移除率達到230 nm/min。在圖案化晶圓方面,可以降低Ma.1(100 m/100m)及Ma.3(10 m/90m)之導線段差(dishing)至0,在Ma.2(50 m/50m)僅有2.85 nm之介電層腐蝕。
With the Integrated Circuit(IC) developed rapidly, the line width of the metal wire on the wafer became smaller in the miniaturization process. In order to the high-resolution lithography process, depth of focus (DOF) continues to be narrowed. To avoid defect on metallization process, the extremely flat wafer surface is necessary. Therefore, chemical mechanical polishing/ planarization (CMP) is widely used. This study mainly improves the copper chemical mechanical polishing solution of phosphoric acid base and chemical mechanical planarization of water-soluble fullerene/cyclodextrin complex with conventional SiO2 (Chemical Mechanical Polishing/Planarization, CMP). It is based on weakly acidic (pH 5) slurry formulation to adjust the polishing performance in the neutral (pH 7) and alkaline (pH 9) environments, and finally add the Beta-Cyclodextrin/C60 solution in the slurry composition. The corrosion potential of different concentrations of the formulation was analyzed by the potentiodynamic polarization curve to investigate the correlation between surface quality and material removal rate. Finally, the effectiveness of the traditional CMP process was compared with the Electro Kinetic Force Assisted CMP (EKF-CMP) process, developed by the laboratory. The experimental results show that the surface roughness of the copper wafer in the neutral slurry is improved 50% to surface roughness(Sa) 2 nm; The removal rate of the material is up 30% to 230 nm/min. In the patterned wafers, the wire gap differences between Ma.1 (100 m/100m) and Ma.3 (10 m/90m) can be reduced to zero, and the erosions of Ma.2 (50 m/50m) can be achieved to 2.85 nm.
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表附錄 XII
第一章 緒論 1
1.1 研究背景 1
1.2 研究目的與方法 6
1.3 論文架構 7
第二章 文獻回顧 9
2.1 銅膜晶圓拋光相關文獻 9
2.2 銅圖案晶圓化學機械平坦化相關文獻 17
2.3 富勒烯相關應用 23
2.4 電致動力輔助化學機械平坦化製程(EKF-CMP) 26
第三章 複合式拋光液製程介紹 32
3.1 富勒烯拋光液 32
3.1.1. 富勒烯及環糊精介紹 32
3.1.2. 富勒烯拋光液製備 34
3.1.3. 富勒烯溶液於不同pH之環境之粒徑大小 36
3.2 SPA拋光液 38
3.2.1 氧化劑濃度分析 40
3.2.2 抑制劑濃度分析 44
3.2.3 錯合劑濃度分析 48
3.2.4 富勒烯溶液濃度分析 52
3.2.5 拋光液極化曲線小結 55
第四章 實驗規劃與設備 56
4.1 實驗設備 56
4.1.1 拋光機 56
4.1.2 EKF-CMP實驗系統 57
4.1.3 恆電位儀 60
4.2 實驗耗材 60
4.2.1 拋光墊 60
4.2.2 鑽石修整器 61
4.2.3 測試晶圓 62
4.3 量測設備 66
4.4 實驗規劃 67
第五章 實驗結果與討論 71
5.1 拋光液電化學分析結果於討論(實驗A) 72
5.1.1 氧化劑濃度探討 73
5.1.2 抑制劑濃度探討 75
5.1.3 錯合劑濃度探討 76
5.1.4 SPA改良探討 77
5.1.5 銅膜晶圓浸泡後接觸角量測 78
5.2 銅膜晶圓及鉭膜晶圓 CMP/EKF-CMP (實驗B) 79
5.2.1 化學機械拋光參數設置 79
5.2.2 外在偏壓對銅薄膜晶圓EKF-CMP的影響 81
5.2.3 40mm*40mm銅膜及鉭膜晶圓CMP/EKF-CMP 84
5.3 銅圖案晶圓化學機械拋光分析(實驗C) 90
5.3.1 化學機械拋光參數設置 90
5.3.2 銅圖案晶圓拋光時間影響結果 94
5.3.3 銅圖案化晶圓CMP後Dishing結果 97
5.3.4 銅圖案化晶圓CMP後Erosion結果 98
5.3.5 銅圖案化晶圓CMP/EKF-CMP 綜合討論 99
第六章 結論與建議 102
6.1 結論 102
6.2 建議 103
參考文獻 104
附錄A. 量測設備 108
附錄B. 拋光液分析 113
附錄C. 銅膜晶圓AFM量測結果 114
附錄D. 圖案化晶圓 116
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