臺灣博碩士論文加值系統

在半導體製造業中鑽石刀片已被廣泛使用於晶圓切割，由於矽晶圓與藍寶石基板屬於脆性材料使得在裸晶(die)或晶片(chip)切割分離時難免會產生脆性崩裂，除了材料脆性本質之外，切割時的鑽石刀片狀況也會影響脆性崩裂的產生，如刀片排削能力與耐磨性質，當其排削能力不佳時會造成切道兩側產生崩裂(chipping)大小尺寸與數量的增加，裸晶或晶片會因此受到破損，故需要預留空間來讓chipping產生，但這也犧牲了生產裸晶的數量，產能亦因此而減少；在刀片與工件互相磨耗下，若沒有適當的耐磨性與排削能力會導致刀片的幾何變形過大，進而造成切削的公差超出預期。
本研究利用高功率脈衝磁控濺鍍系統來製備具有金屬玻璃鍍層之鑽石刀片，藉此提升鍍膜附著能力、耐磨耗與硬度，金屬玻璃鍍膜因非晶結構而具備低摩擦係數、平整表面、高強度與韌性之特質，本研究將鍍覆200nm鋯基、鎢基、鋁基金屬玻璃與純鈦鍍層之鑽石刀片進行矽晶圓、藍寶石基板與有圖形之藍寶石基板切割並與未做處理之刀片做比較，以chipping面積分率、崩裂寬度、切口角度與深度作為評估刀片之切削特性、製程品質穩定度和耐磨程度。
在矽晶圓上切削20次的實驗中，相較於未處理之刀片，具鋯基金屬玻璃鍍層之鑽石刀片降低chipping面積分率23%，同時減少在chipping 深度於21μm到超過41μm區間的chipping 數量，切口角度所繪製出的曲線較平穩，由此可知，具鋯基金屬玻璃鍍層之鑽石刀片有極佳的品質穩定度和耐磨性。然而，鎢基、鋁基金屬玻璃與純鈦鍍層並無明顯提升鑽石刀之切削性。在切削藍寶石基板時，鋯基金屬玻璃鍍層之鑽石刀片也降低chipping面積分率達45%；在Chipping 崩裂深度之總數統計，於大部分chipping 深度的區間中鋯基金屬玻璃鍍層之鑽石刀片取得較低的數值。有圖形的藍寶石基板切削也得到與藍寶石基板相似的好結果。整體而言，鋯基金屬玻璃鍍層之鑽石刀片有極佳的切削特性和製程品質穩定度來自於較佳排削能力(疏水性)、低摩擦係數與耐磨之特性。

Diamond blades are widely used in die cutting in the semiconductor manufacturing process. However, it is difficult for silicon and sapphire to be cut into the chip or die without damages or chipping during blade dicing, owing to their brittleness nature. In addition, there are still many factors affecting dicing quality, including the diamond blade quality. Cutting debris removal ability and wear resistance of the blade are often overlooked, which detrimentally result in increases of chipping size. Poor qualities on both sides of the kerfs, in turn, can damage the die or the chip, causing the yield loss. Therefore, more spaces are needed to accommodate chipping when dicing a wafer at the expense of valuable dies.
This work is directed toward to evaluations of thin film metallic glasses (TFMGs) for improving cutting properties of diamond blades. To enhance the adhesion, wear resistance and hardness, the high power impulse magnetron sputtering (HiPIMS) was applied. TFMG was selected because it exhibited a low coefficient of friction, smooth surface, high strength and toughness due to the amorphous nature. In this work, the 200 nm-thick Zr-based, W-based, Al-based TFMGs and Ti coated chamfer diamond blades were prepared to compare with that of the bare blade for silicon, sapphire and patterned sapphire substrate (PSS) dicing. The chipping area fraction, chipping width as well as kerf angle and depth are employed to assess the cutting performance, process variation and wear resistance.
After 20-cutting across a silicon wafer, the Zr-based coated blades reduce the chipping area fraction by 23%, comparing to the bare blade. Moreover, the amount of chipping at five intervals of 5 µm in the range of 21 µm to over 41 µm for the Zr-based coated blades are the lowest than the others. The smoother gradient of kerfs angle for the Zr-based coated blade was investigated by the meaning of the little process variation and wear resistance. However, W-based, Al-based TFMGs and Ti coated blades indicate no improvements in cutting performance. For sapphire dicing, the Zr-based coated blades show a reduction of 45% in the chipping area fraction for the comparison of bare blades. In the total number of chips width measurement results, the lower values for the Zr-based coated blades in most of chipping width intervals. For the PSS dicing, the results of the chipping area fraction and chipping width measurements were similar to the previous one obtained from sapphire. Overall, the Zr-based coated blades have better cutting performance and little process variation due to the better debris removal ability (hydrophobic property), low coefficient of friction (COF) and high wear resistance.

致謝 I
摘要 II
Abstract III
Contents IV
List of Figures VII
List of Tables XIII
Chapter 1. Introduction 1
1.1 Objectives of Study 2
Chapter 2. Literature review 3
2.1 Diamond blade 3
2.1.1 Classification of diamond blade 3
2.1.2 Chamfering diamond blade 5
2.2 Wafer dicing process 6
2.2.1 Blade dicing 7
2.2.2 Chipping defects 8
2.2.3 Wear wafer dicing 11
2.2.4 Workpiece material: silicon wafer 11
2.2.5 Workpiece material: c-plane sapphire 12
2.2.6 Workpiece material: patterned sapphire substrates 13
2.3 Chipping size and blade wear measurements 14
2.4 Thin film metallic glasses (TFMGs) 18
2.4.1 Unique properties of TFMGs 19
2.4.1.1 Surface roughness 19
2.4.1.2 Coefficient of friction (COF) 20
2.5 High power impulse magnetron sputtering (HiPIMS) 21
Chapter 3. Experimental Procedures 23
3.1 Diamond blade and workpiece preparations 23
3.1.1 Diamond blade preparations 24
3.1.2 Workpiece material: silicon wafer, sapphire, and patterned sapphire substrate (PSS) 25
3.2 Thin film deposition 26
3.3 Material characterizations 30
3.3.1 Crystallographic analysis 30
3.3.2 Microstructure analysis 31
3.4 Dicing 32
3.4.1 Automatic dicing saw system 34
3.5 Chipping measurements 35
3.5.1 Comparisons of chipping area fraction 35
3.5.2 Comparisons of chipping 36
3.5.2.1 Chipping width and number of chips 36
3.5.2.2 Average chipping width 38
3.5.2.3 Comparisons of kerf depth and angle 38
3.5.3 SEM observation and composition analysis 40
Chapter 4. Results and Discussion 41
4.1 Characterizations of TFMG 41
4.1.1 Crystallographic analysis 41
4.1.2 Chemical composition analysis 42
4.1.3 Contact angle test 42
4.2 Microstructure analyses 43
4.2.1 Bare diamond blade 43
4.2.2 Diamond blades with TFMG and Ti coatings 45
4.3 Dicing with chamfering diamond blades 56
4.3.1 Results of dicing on silicon wafer 56
4.3.1.1 Comparisons of chipping area fraction 57
4.3.1.2 Comparisons of chipping width 60
4.3.1.3 Comparisons of kerf depth and angle 64
4.3.1.4 Surface morphology of kerfs 66
4.3.2 Results of dicing on sapphires 68
4.3.2.1 Comparisons of chipping area fraction 68
4.3.2.2 Comparisons of chipping width 71
4.3.2.3 Comparisons of kerf depth and angle 74
4.3.2.5 Surface morphology of kerfs 76
4.3.3 Results of dicing on patterned sapphire substrate (PSS) 78
4.3.3.1 Comparisons of chipping area fraction 78
4.3.3.2 Comparisons of chipping width 81
4.3.3.3 Comparisons of kerf depth and angle 84
4.3.3.4 Surface morphology of kerfs 86
4.4 Discussion 88
4.4.1 Discussion of dicing on silicon wafer 90
4.4.2 Discussions for dicing on sapphire 92
4.4.3 Discussions for dicing on patterned sapphire substrate (PSS) 94
Chapter 5. Conclusions 95
References 96
Chapter 6. Appendix 100
Surface morphologies of the kerfs 100
6.1 Original data 116
6.1.1 Results of dicing on silicon wafer 116
6.1.1.1 Comparisons of chipping area fraction 116
6.1.1.2 Comparisons of chipping width 118
6.1.2 Results of dicing on sapphires 120
6.1.2.1 Comparisons of chipping area fraction 120
6.1.2.2 Comparisons of chipping width 122
6.1.3 Results of dicing on patterned sapphire substrate (PSS) 124
6.1.3.1 Comparisons of chipping area fraction 124
6.1.3.2 Comparisons of chipping width 126

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