臺灣博碩士論文加值系統

本論文以旋塗和蒸鍍製程製作1 cmx1 cm發光面積的綠光螢光可撓式有機發光二極體。首先，在元件結構中加入電洞注入層PEDOT：PSS，增加電洞注入能力，在8V時亮度提高到232 cd/m2，效率為0.33 cd/A。接著加入電洞阻擋層TPBi，藉由讓電洞限制在發光層中與電子複合機率提升，當TPBi 20 nm時，在8V時亮度提高到413.9 cd/m2，效率0.77 cd/A。接著多加入一層電子傳輸層Alq3，希望能提高發光層中電洞電子複合機率，當TPBi/Alq3厚度為20 nm/15 nm，在定電壓8V下亮度為59.67 cd/m2，效率為0.09 cd/A。
當元件結構中增加PEDOT：PSS厚度，增加電洞注入數量獲得提升，提高亮度與效率，在定電壓8V時，亮度從232 cd/m2提升至1085 cd/m2，效率從0.33 cd/A提升至2.05 cd/A。接著調整發光層Alq3厚度，當發光層厚度從55 nm降至45 nm，並加入電洞阻擋層TPBi 20 nm，實驗結果發現整體電流下降，推論為減少了發光層厚度而增加電洞阻擋層厚度，連帶影響到發光層中電洞電子複合的數量，在定電壓8V下，亮度為95.5 cd/m2，效率為0.7cd/A。
在ITO玻璃基板背面旋塗一層厚度為2.5 um之TiO2漿料，提升光取出效率，在電壓8V時亮度由1072 cd/m2提升至1386 cd/m2，效率從2.74 cd/A提高到3.64 cd/A。最後，在元件中加入一層10 nm之NiO作為電洞緩衝層，使總電流下降，效率提升，由實驗結果得知，效率為2.83 cd/A。

This paper has made use of spin-coating and evaporation processes to produce green fluorescent flexible organic light-emitting diodes, and its light-emitting area measures 1 cm x 1 cm. Firstly, PEDOT：PSS is added to the device structure to increase the injection capacity. At 8V, the luminance is increased to 232 cd/m2 and the efficiency is 0.33 cd/A. Then TPBi is added to increase the probability of recombination with electrons by limiting the hole in the emitting layer. When TPBi is 20 nm, the luminance increases to 413.9 cd/m2 at 8V, and the efficiency is 0.77 cd/A. Then, a layer of electron transport layer Alq3 is added to increase the recombination probability of the hole in the emitting layer. When the thickness of TPBi/Alq3 is 20 nm/15 nm, the luminance is 59.67 cd/m2 at a constant voltage of 8V, and the efficiency is 0.09 cd/A.
When the thickness of PEDOT：PSS is increased in the device structure, the number of hole injections is increased, and the luminance and efficiency are improved. At a constant voltage of 8V, the luminance is increased from 232 cd/m2 to 1085 cd/m2, and the efficiency is increased from 0.33 cd/A to 2.05 cd/A. Then adjust the thickness of Alq3 layer. When the thickness of Alq3 layer decreases from 55 nm to 45 nm and TPBi layer is added, the experimental results show that the overall current decreases. It is inferred that the thickness of the barrier layer increases in order to reduce the thickness of the luminous layer, which affects the number of hole electron recombination in the luminous layer. At a constant voltage of 8V, the luminance is 95.5 cd/m2 and the efficiency is 0.7 cd/A.
Titanium dioxide slurry with a thickness of 2.5 um was spin-coated on the back of ITO glass substrate to improve the light extraction efficiency. At voltage 8V, the luminance increased from 1072 cd/m2 to 1386 cd/m2, and the efficiency increased from 2.74 cd/A to 3.64 cd/A. Finally, a 10 nm NiO layer is added to the device as a buffer layer, which decreases the total current and improves the efficiency. The experimental results show that the efficiency is 2.83 cd/A.

摘要.........i
Abstract.........ii
誌謝.........iv
目錄.........v
表目錄.........vii
圖目錄.........viii
第一章、緒論.........1
1.1有機發光二極體簡介.........1
1.2研究動機.........2
第二章、有機發光二極體原理及文獻探討.........3
2.1有機發光二極體原理.........3
有機發光二極體發光機制.........3
電流注入理論.........4
光取出層原理.........6
有機發光二極體各層結構介紹.........7
2.2有機發光二極體文獻探討.........9
第三章、實驗方法與步驟.........11
3.1實驗流程.........11
3.2陰陽極圖形製備.........12
雷雕基板圖形化.........12
基板清洗.........15
ITO基板表面處理.........15
3.3旋轉塗佈材料.........19
旋轉塗佈溶液材料製作流程.........19
旋轉塗佈溶液材料之選用.........20
旋轉塗佈光取出層製作流程.........20
3.4熱蒸鍍有機材料層.........22
熱蒸鍍有機材料層操作流程.........22
熱蒸鍍有機材料層之材料選用.........25
3.5熱蒸鍍金屬陰極.........27
3.6元件發光圖案定義流程.........29
3.6.1 ITO陰陽極定義.........29
3.6.2旋塗PEDOT：PSS溶液.........29
3.6.3有機材料蒸鍍.........30
3.6.4金屬材料蒸鍍.........31
3.7元件特性量測.........32
光電特性曲線量測.........32
第四章、結果與討論.........33
4.1 PEN/ITO製作有機發光二極體之光電特性研究.........33
4.1.1電洞元件之電流特性比較.........33
4.1.2電子元件之電流特性比較.........35
4.1.3電洞與電子元件之電流特性比較.........38
4.1.4加入電洞注入層之光電特性比較.........40
4.1.5加入電洞阻擋層之光電特性比較.........43
4.1.6加入電子傳輸層之光電特性比較.........46
4.1.7增厚電洞注入層之光電特性比較.........50
4.1.8調變發光層之光電特性比較.........53
4.1.9比較各階段元件特性.........56
4.2有機發光二極體亮度提升之研究.........60
4.2.1基板背面旋塗TiO2漿料對元件光電特性之影響.........60
4.2.2加入NiO對元件光電特性之影響.........63
第五章、結論.........66
參考文獻.........67
Extended Abstract.........70

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