臺灣博碩士論文加值系統

本研究利用射頻磁控共濺鍍系統，分別利用ZnO、AlN靶材製程氧化鋅薄膜與氮化鋁-氧化鋅共濺鍍薄膜，經由不同環境(氮氣、氧氣)700度熱處理三種結構，分別為未摻雜ZnO薄膜、和加入阻障層AlN-ZnO薄膜雙異質結構提升薄膜電子電洞侷限能力，以及再加入氮化鋁侷限層來增加電子侷限能力使發光效益改變，利用霍爾量測電特性及光激發螢光光譜圖了解薄膜堆疊特性，由於氧氣能夠補償施體離子的效果，電特性可發現氮氣環境熱處理相較於氧氣有較高的載子濃度，雙異質結構由於鋁原子擴散而取代鋅原子的位置，除了能抑制氧化鋅的本質缺陷，更提高了結構之載子濃度，並改善氧化鋅的結晶性，而加入氮化鋁侷限層之後由於過多的鋁原子擴散進入主動區，多餘的鋁原子會與氧產生鍵結形成絕緣的效果，使得結構電阻率升高，載子濃度降低，導致氧化鋅的結晶性較差。本研究利用p型矽基板製成n-ZnO/p-Si、DH/p-Si及DH/AlN/p-Si異質接面二極體，從電流-電壓特性可以發現，AlN-ZnO薄膜雙異質結構導通電壓為2.62V時，電流比值為5.15，則再製程氮化鋁侷限層，導通電壓上升為2.74V，電流比值為40.89，兩者皆有良好的整流特性。進一步探討以不同溫度(700度、500度、400度)氮氣熱處理對於未摻雜ZnO薄膜、雙異質結構及加入氮化鋁侷限層的雙異質結構之影響，從電流-電壓特性可以發現，其元件之串聯電阻和啟動電壓隨著氮氣熱退火溫度上升而下降，AlN-ZnO薄膜雙異質結構在氮氣400度時導通電壓為2.00V，電流比值為9.13，當溫度上升到500度時，導通電壓下降為1.88V，電流比值為10.45，當溫度到達700度時，有最低的導通電壓為1.80V，電流比值為11.68。

In this study, using radio frequency magnetron co-sputtering system, zinc oxide thin films and aluminum nitride-zinc oxide co-sputtering thin films were prepared by using zinc oxide and AlN targets respectively. Three structures, namely, undoped zinc oxide thin films and barrier layer AlN-zinc oxide thin films, were annealed at 700 degrees in different environments (nitrogen and oxygen). The confinement ability of the thin films was enhanced by adding double heterostructures of barrier layer AlN-ZnO thin films, and the confinement layer of aluminum nitride. Increasing the electron confinement ability can change the luminescent efficiency. Hall measurements and photoinduced fluorescence spectroscopy are used to understand the stacking characteristics of thin films. Oxygen can compensate for the effect of donor ions. The electrical properties show that the nitrogen ambient heat treatment has higher carrier concentration than oxygen. The double heterostructure substitutes for the position of zinc atoms due to the diffusion of aluminum atoms, in addition to inhibiting zinc oxide. The intrinsic defect increases the carrier concentration of the structure and improves the crystallinity of zinc oxide. When the confined layer of aluminum nitride is added, the excess aluminum atoms will diffuse into the active region. The excess aluminum atoms will bond with oxygen to form an insulating effect, which increases the resistivity of the structure and reduces the carrier concentration, resulting in poor crystallinity of zinc oxide. In this study, n-ZnO/p-Si, DH/p-Si and DH/AlN/p-Si heterojunction dipoles are fabricated on p-type silicon substrates. From the current-voltage characteristics, it can be found that when the conduction voltage of AlN-ZnO double heterojunction is 2.62V, the current ratio is 5.15, then the limiting layer of AlN is fabricated. The conduction voltage rises to 2.74V and the current ratio is 40.89. Both of them have good rectification characteristics. The effects of nitrogen heat treatment at different temperatures (700, 500 and 400 degrees) on undoped ZnO thin films, double heterostructures and double heterostructures with aluminum nitride confinement layer were further investigated. From the current-voltage characteristics, it was found that the series resistance and start-up voltage of the components decreased with the increase of nitrogen heat annealing temperature. The double heterostructures of AlN-ZnO thin films were electrically conductive at 400 degrees nitrogen. Voltage is 2.00V and current ratio is 9.13. When the temperature rises to 500 degrees, the on-line voltage drops to 1.88V and the current ratio is 10.45. When the temperature reaches 700 degrees, the lowest on-line voltage is 1.80V and the current ratio is 11.68.

摘要.........i
Abstract.........ii
誌謝.........iv
目錄.........v
表目錄.........viii
圖目錄.........ix
第一章緒論.........1
1-1 前言.........1
1-2 文獻回顧.........1
1-2-1 氧化鋅薄膜熱處理特性.........1
1-2-2 氧化鋅異質結構發光二極體.........2
1-2-3氮化鋁-氧化鋅共濺鍍薄膜.........3
1-3 研究動機與目的.........3
第二章理論基礎.........6
2-1 電漿理論.........6
2-2 射頻磁控濺鍍原理.........7
2-3 薄膜成核理論.........7
2-4 薄膜材料特性簡介.........8
2-4-1 氧化鋅薄膜.........8
2-4-2 氧化銦錫薄膜.........8
2-4-3 氮化鋁薄膜.........9
2-5 金屬與半導體接觸理論.........9
2-5-1 歐姆接觸理論.........9
2-5-2 傳輸線模型【43-45】.........10
第三章實驗製程方法與步驟.........19
3-1共濺鍍薄膜製作流程.........19
3-1-1 基板清洗.........19
3-1-2 濺鍍系統【44】.........19
3-1-3鍍膜製作流程.........20
3-2 傳輸線模型製程流程.........20
3-3 二極體製程流程.........21
3-3-1不同環境氧化鋅薄膜異質結構二極體.........21
3-3-2不同溫度氧化鋅薄膜異質結構二極體.........22
3-4 實驗儀器量測原理.........23
3-4-1 表面輪廓分析儀.........23
3-4-2 霍爾量測系統.........23
3-4-3 光學穿透率量測.........23
3-4-4 光激發螢光量測【45】【46】.........24
3-4-5 半導體參數分析儀.........24
3-4-6 低掠角X光繞射儀(GrazingincidentX-raydiffractionpattern；GIXRD).........24
第四章結果與討論.........34
4-1 不同環境快速熱退火處理氧化鋅薄膜特性分析.........34
4-1-1不同環境快速熱退火處理氧化鋅薄膜之電特性及結晶性分析.........34
4-1-2 不同環境快速熱退火處理氧化鋅薄膜之光學特性分析.........34
4-1-3不同環境快速熱退火氧化鋅異質接面二極體元件特性分析.........35
4-2氮氣快速熱退火氧化鋅薄膜異質結構接面二極體特性分析.........36
4-2-1氮氣快速熱退火氧化鋅薄膜異質結構之電特性及結晶性分析.........37
4-2-2氮氣快速熱退火氧化鋅薄膜異質結構之光學特性分析.........38
4-2-3氮氣快速熱退火氧化鋅薄膜異質結構接面二極體元件特性分析.........39
4-3不同溫度氮氣快速熱退火氧化鋅薄膜結構特性分析.........41
4-3-1不同溫度氮氣快速熱退火處理氧化鋅薄膜結構之電特性及結晶性分析.........41
4-3-2不同溫度氮氣快速熱退火處理氧化鋅薄膜結構之光學特性分析.........42
4-3-3不同溫度氮氣快速熱退火氧化鋅薄膜異質結構接面二極體特性分析.........42
第五章 結論與未來工作.........82
參考文獻.........84
Extended Abstract.........89

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