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研究生:何書維
研究生(外文):Shu-Wei Ho
論文名稱:光譜及射頻解析光致電流檢測對 ESD 破壞 VCSEL 的影響
論文名稱(外文):Spectral and Radio Frequency Resolved Optical Beam Induced Current Imaging (OBIC) for the Detection of ESD Defects on VCSELs
指導教授:高甫仁
指導教授(外文):Fu-Jen Kao
學位類別:碩士
校院名稱:國立陽明大學
系所名稱:生醫光電研究所
學門:工程學門
學類:生醫工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:107
語文別:中文
論文頁數:64
中文關鍵詞:光致電流垂直共振腔面射型雷射
外文關鍵詞:OBICVCSEL
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VCSEL是關鍵的光電子器件之一,它具有廣泛的應用,包括通信、傳感和生物識別。適用的設備包括智能手機(面部識別碼)、汽車、機器人和可穿戴設備,因此,其製造良率和相應的缺陷分析是至關重要的。
本研究的主題是使用雷射掃描顯微鏡研究ESD影響的VCSEL(垂直共振腔面射型雷射),反射模式和電流對比。在測量中,VCSEL逆向偏壓從0增加到6V,具有變化的溫度級,以在每個偏壓下獲取OBIC圖像。分析缺陷區域以揭示在不同模型(機器模型,人體模型)下誘導的受ESD影響的VCSEL的特性。在整個研究中使用兩個波長,850nm和900nm。注意,加熱具有增加漏電流的作用,這將進一步區分ESD的OBIC對比度,特別是當使用900nm激發時。
具有射頻頻譜分析的OBIC將進一步揭示ESD的時間響應,增加了OBIC的多功能性。 該研究表明,OBIC是一種功能強大且通用的非侵入性成像模式,具有高對比度,可與其他物理參數的變化相結合,實現詳細和快速的ESD誘導缺陷分析。
VCSEL is one of the key optoelectronic components. It has a wide range of applications, including communication, sensing, and biometrics. The applicable devices include smartphones (face ID), cars, robots, and wearable devices. Therefore, its fabrication yield rate and the corresponding defect analysis are crucial.
The topic of this study is to investigate ESD affected VCSEL (Vertical-Cavity Surface-Emitting Laser) using laser scanning microscopy with the modalities of reflection and current contrasts. In the measurements, the VCSEL reverse bias is increased from 0 to 6V with varying temperature steps to acquire OBIC images at each bias voltage. The defect areas are analyzed to reveal the characteristics of ESD affected VCSELs, induced under different models (Machine Model, Human Body Model). Two wavelengths, 850 nm and 900 nm, are used throughout the study. Note that heating has the effect of increasing the leakage current, which would further distinguish the OBIC contrast of ESD, particularly when 900 nm excitation is used.
The OBIC with spectral analysis at radio frequency will further reveal the temporal responses of ESD, adding the versatility of OBIC. This study has shown that OBIC is a powerful and versatile non-invasive imaging modality with high contrast and can be combined with the changes of other physical parameters for detailed and rapid ESD induced defect analysis.
摘要 1
Abstract 2
目錄 3
第一章 簡介 5
1-1 導論 5
1-2 文獻 6
1-3論文架構 7
第二章 原理 8
2-1 P-N 接面二極體 8
2-2 溫度與二級之間的關係 11
2-3光致電流DC OBIC(Optical Beam-Induced Current) 12
2-4射頻光致電流 RF OBIC (Radio Frequency Optical Beam-Induced Current) 14
2-5 靜電放電 ESD(ElectroStatic Discharge) 17
2-6濾波器 (filter) 19
第三章 實驗架設 22
3-1 樣品介紹 22
3-2 系統架設 25
3-3 射頻光致電流(RF OBIC) 26
3-4光源 26
3-5 低雜訊電壓放大器 29
3-6 頻譜分析儀 29
3-7 共軛焦顯微鏡系統 31
3-8 實驗說明 33
第四章 實驗結果與數據分析 34
4-1 反射式影像與光致電流影像結合 34
4-2 正常及缺陷樣品光譜解析光致電流影像 35
4-3 ESD-HBM,ESD-MM 在波長850nm下逆向偏壓下缺陷區域光致電流影像 36
4-4 ESD-HBM,ESD-MM 在波長900nm下逆向偏壓下缺陷區域光致電流影像 37
4-5 ESD-HBM,ESD-MM 在波長900nm下改變元件溫度光致電流影像 43
4-6 正常與缺陷VCSEL的射頻光致電流譜 48
4-7 正常與缺陷VCSEL溫度改變下的射頻光致電流譜 53
第五章 結論與未來發展 59
5-1 結論 59
5-2 未來發展 61
參考文獻 (References) 62
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