臺灣博碩士論文加值系統

摘要
本研究使用電鍍方式，在 (001)方向具織構的矽基材上，析鍍不同成分比例的鈷釕合金，將電鍍後的矽基材/鈷釕擴散阻障層/銅試片，在退火爐中以數個不同溫度退火十分鐘，退火後的矽基材/鈷釕擴散阻障層/銅試片，使用X光繞射(XRD)、掃描電子顯微鏡(SEM)、掃描穿透式顯微鏡(STEM)進行相關之分析，結果顯示在矽/純釕阻障層/銅試片中，於400 ºC退火時就會產生銅矽化合物(Cu3Si)，而在矽/ Ru90Co10/銅的系統，則在500ºC時發現Cu3Si。最後將鈷提升至90%(矽/ Ru10Co90/銅)則在600ºC時才會產生Cu3Si，此顯示電鍍鈷釕阻障層中，鈷含量愈高則阻擋銅擴散的效果愈好，鈷釕合金阻擋溫度最高能達到600ºC。

關鍵字:電鍍;太陽能電池;擴散阻障層。

ABSTRACT
In this work, a thin RuCo layer with different composition were deposited on silicidation of textured (001) silicon by an electroplating method. The Cu/RumCon/textured-Si samples were annealed at various temperature for 10 minutes in an annealing furnace. The Cu/RumCon/textured-Si samples were defined using the following: x-ray diffractometer (XRD), scanning electron microscope (SEM), and scanning transmission electron microscope (STEM). For the Cu/Ru/textured-Si samples, the Cu3Si particles develop from an annealing temperature of 400ºC. For the Cu/Ru90Co10/textured-Si samples, the Cu3Si particles develop from an annealing temperature of 500ºC. For the Cu/Ru10Co90/textured-Si samples, the Cu3Si particles develop from an annealing temperature of 600ºC. This revealed that electroplating a thin RumCon layer with higher cobalt content can act as an effective diffusion barrier against Cu at higher than 500°C.

Keywords：Electroplating; Solar cells; Diffusion barrier

目錄
摘要 i
Abstract ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章緒論 1
1.1前言 1
1.2研究動機 1
第二章基礎原理 2
2.1文獻回顧 2
2.2無電鍍 2
2.2.1無電鍍原理 2
2.2.2無電鍍液特性 3
2.2.3無電鍍前處理 3
2.2.4無電鍍鎳反應原理 4
2.2.5無電鍍特性 5
2.3電鍍 5
2.4擴散阻障層 6
2.5金屬鈷、釕的特性 7
2.6金屬矽化合物 7
第三章實驗方法 9
3.1實驗藥品 9
3.2實驗流程圖 10
3.3 實驗步驟 12
第四章結果與討論 14
4.1無電鍍法析鍍鎳再鍍銅經退火不同溫度之分析 14
4.2電鍍鈷釕之分析 17
4.3 電鍍純釕金屬後鍍銅 18
4.4電鍍鈷釕合金之鈷含量10%( Co10Ru90 )後鍍銅 22
4.5電鍍鈷釕合金之鈷含量65%( Co65Ru35)後鍍銅 27
4.6電鍍鈷釕合金之鈷含量90%( Co90Ru10 )後鍍銅 29
4.7電鍍純鈷金屬後鍍銅 35
第五章結論 38
參考文獻 39

參考文獻
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