臺灣博碩士論文加值系統

本研究為使用銅離子輔助化學蝕刻後進行後處理之矽晶片的表面形狀和反射率分析之探討，第一部分進行Cu(NO3)2/HF/H2O2的低溫酸蝕刻步驟，結束後使用HNO3清除金屬離子。第二部分使用HF/ HNO3/ H2O溶液進行後處理蝕刻，結束使用HF清除表面氧化物。使用場發射電子顯微鏡分析織構化後矽晶片表面形貌，紫外光/可見光分光光譜儀分析蝕刻後晶片之反射率。
透過SEM顯示使用Cu進行金屬輔助矽基板可以蝕刻出{111}面，進而形成倒金字塔的蝕刻洞，在這之中發現溫度、濃度、時間的改變均能造成整體蝕刻情形。另一方面在已經形成倒金字塔的蝕刻洞進行後處理，研究HF/HNO3的比值對後處理形貌的影響，發現HF/HNO3的比值在4~5.33之間能將倒金字塔結構蝕刻成完整的碗狀結構，進而利用碗狀結構更能降低光直接從表面反射出去的特性，增加太陽能電池的效率。

This study explores the surface shape and reflectivity analysis of tantalum wafers that have been post-treated with copper ion-assisted chemical etching.In the first part,we perform a low temperature acid etching step of Cu(NO3)2/HF/H2O2.At the end we use HNO3 to remove metal ions.The second part uses a HF/HNO3/ H2O solution for post-treatment etching,and at the end we use HF to remove surface oxides.The surface morphology of the textured ruthenium wafer was analyzed by field emission electron microscopy,and the reflectance of the etched wafer was analyzed by an ultraviolet/visible spectrophotometer.
We can etch the {111} plane by using SEM to use Cu for metal-assisted ruthenium substrates. It will form an etched hole in the inverted pyramid.Among them, we found that changes in temperature,concentration, and time all contribute to the overall etching situation.On the other hand, after the etch hole with inverted pyramid is formed,the effect of the ratio of HF/HNO3 on the post-treatment morphology is studied.It is found that the ratio of HF/HNO3 can etch the inverted pyramid structure from 4 to 5.33.The bowl-like structure, in turn, utilizes a bowl-like structure to further reduce the direct reflection of light from the surface and increase the efficiency of the solar cell.

摘要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1研究背景與動機 1
1.2研究目的 1
1.3論文架構 7
第二章 實驗原理與文獻回顧 8
2.1 文獻回顧 8
2.2 太陽光電效應 11
2.3 太陽能電池種類 14
2.3.1 太陽能矽晶片生產流程 15
2.3.2 磷擴散製成 16
2.3.3 表面抗反射薄膜製備 18
2.3.4 網印與導電漿技術 18
2.4 矽晶片蝕刻機制 19
2.4.1 酸蝕刻技術 22
2.4.2 金屬輔助化學蝕刻法 23
2.4.3 硝酸銅蝕刻機制 24
2.4.4 缺陷去除蝕刻法 27
2.5 太陽能電池的參數 28
2.6 高效率矽晶太陽能電池技術 30
2.6.1 鈍化射極及背面太陽能電池(PERC) 31
2.6.2 指叉狀背面電極太陽電池(IBC) 32
2.7 量測分析儀器 33
2.7.1 場發射掃描式電子顯微鏡(Field Emission Scanning Electron Microscope) 33
2.7.2紫外光/可見光光譜儀(UV-visible spectrophotometer) 33
第三章 實驗流程與實驗器材 35
3.1 實驗藥品. 35
3.2 實驗儀器 36
3.3 實驗流程 36
3.3.1 蝕刻前清洗 36
3.3.2 使用明徽清洗過後的蝕刻晶片進行Cu(NO3)2/ HF/H2O2蝕刻 37
第四章 結果與討論 39
4.1使用明徽單晶矽晶片進行Cu(NO3)2/ HF/H2O2蝕刻之表面形貌分析 39
4.2使用Cu(NO3)2 /HF/ H2O2蝕刻晶片進行後處理蝕刻之表面形貌分析 42
4.3將蝕刻晶片進行反射率分析 48
第五章 結論 51
參考文獻 52

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