臺灣博碩士論文加值系統

電鍍銅填充盲孔技術(blind-hole Cu filling)是製造高密度互連技術(high-density-interconnection technology, HDI)印刷電路板的關鍵製程。銅和其他常見的金屬元素相比，其擁有低電阻率、高抗電遷移(electromigration)能力、和極佳的機械、化學、導熱特性，使其被優選為填孔的最適材料。電鍍銅在室溫下會自發再結晶(recrystallization)進而大幅改變其微結構/晶體特徵，此現象被稱為「自退火」(self-annealing)。然而，許多文獻已探討電鍍銅之自退火行為，但銅盲孔隨時間進行自退火行為還尚未被探討。本研究利用場發射掃描式電子顯微鏡(field-emission scanning electron microscope，FE-SEM)搭配電子背向散射繞射(electron backscatter diffraction，EBSD)技術，針對盲孔結構下電鍍銅的自退火演進行為進行觀測。發現電鍍銅於盲孔中，晶體取向隨自退火趨向[101]||RD + [111]||RD。並且利用飛行時間二次離子質譜儀(time of flight secondary ion mass spectrometer, TOF-SIMS)建立自退火行為發生順序與有機添加劑濃度分佈的關聯。本研究終將探討三項主題：1.盲孔電鍍銅之自退火行為(第3.1節)；2.光澤劑濃度對於電鍍銅自退火行為之影響(第3.2節)；3.電鍍銅之盲孔填孔機制探討(第3.3節)。此一知識可提供微電子工業所需之電鍍銅自退火及金屬化填孔的重要訊息，並且有助於提升印刷電路板之高密度互連技術的發展。

Blind-hole (BH) metallization via Cu electrodeposition is a critical technology for printed circuit boards (PCBs) of high-density-interconnection (HDI) because it provides excellent thermal and electrical conductivity and efficient utilization of space. The as-deposited electroplating Cu generally possesses a nanocrystalline microstructure, which is unstable and undergoes a spontaneous grain growth at room temperature within a few hours, generally termed Cu self-annealing. Although numerous publications concerning the self-annealing behavior of electroplating Cu (surface Cu), there is still limited information regarding such a time-dependent phenomenon in the BH structure. In this study, the self-annealing behavior of electroplating Cu was characterized via an ohm meter, a field-emission scanning electron microscope (FE-SEM) in combination with electron backscatter diffraction (EBSD) analysis system, and a time of flight secondary ion mass spectrometer (TOF-SIMS). A strong correlation among electrical transition, Cu crystallographic transition, and impurity distribution was established. In this study, three examined case were investigated: 1. Self-annealing behavior of electroplating Cu in the blind-hole structure (Chapter 3-1); 2. Effect of brightener concentration on recrystallization process of electroplating Cu (Chapter 3-2); 3. Direct evidence of CEAC and CDA filling mechanisms in blind holes by Cu electroplating (Chapter 3-3). This information advances our understanding of the Cu self-annealing behavior in the BH structure and the mechanisms of BH Cu fillings. This would be helpful in development of the high-density interconnection (HDI) technology in PCB.

Contents
Chinese Abstract (i)
English Abstract (iii)
Contents (v)
List of Figures (vii)

Chapter 1 Introduction
1.1 Background (1)
1.2 Literature review (5)
1.2.1 Self-annealing behavior of Electroplating Cu (5)
1.2.2 Depth-dependent self-annealing behavior of electroplating Cu (11)
1.2.3 Pinhole formation mechanism of electroplating Cu and its mitigation strategy (17)
1.2.4 Microstructure transition of electroplating Cu during self-annealing and its effect on the substrate warpage (24)
Chapter 2 Experimental details (35)
2.1 Sample preparation (35)
2.2 Material properties characterization (38)
Chapter 3 Results and discussion
3.1 Self-annealing behavior of electroplating Cu in the blind-hole structure (41)
3.1.1 Electrical characterization (41)
3.1.2 Microstructure transition (45)
3.1.3 Impurity distribution (54)
3.2 Effect of brightener concentration on recrystallization process of electroplating Cu (63)
3.3 Direct evidence of CEAC and CDA filling mechanisms in blind holes by Cu electroplating (88)
Chapter 4 Conclsions (104)
Refernence (106)

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