本文利用高激子壽命和低結合能的有機-無機鈣鈦礦材料，因為其獨特光物理性質得以應用在新穎的非揮發性快閃光記憶。但是，光記憶體的長時間光寫入限制了其在光照上網技術(light-fidelity, Li-Fi)上的應用，這需要高儲存容量和短時間光寫入的特性，因此在本文中利用嵌段共聚物聚苯乙烯-b-聚環氧乙烷(polystyrene-block-poly(ethylene oxide), PS-b-PEO)其具有自主裝的特性可成功的控制鈣鈦礦(MAPbBr3)在形貌上的變化，並影響光記憶體在電性上的表現，其中鈣鈦礦中的鉛離子與聚環氧乙烷間的螯合促進了聚苯乙烯-b-聚環氧乙烷/鈣鈦礦薄膜的抗溶劑能力，因此能以溶液製成旋轉塗佈的方式塗佈聚(3-己基噻吩-2,5-二基) (poly(3-hexylthiophene-2,5-diyl), P3HT)作為有機半導體主動層，通過操縱鈣鈦礦與P3HT之間的界面區域，可以實現0.056 ns-1的快速光響應電荷傳輸速率，89％的高電荷傳輸效率，104的照光開關電流比和5 ms的極短光寫入時間。這種可溶液製成的，可快速光寫入的非揮發性快閃光記憶體可以作為Li-Fi的實際應用。

The exotic photophysical properties of organic-inorganic hybrid perovskite with long exciton lifetime and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming time. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as photoactive floating gate was demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promoted the anti-solvent functionalities of perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns-1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104 and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.

致謝 i
摘要 ii
ABSTRACT iii
目錄 iv
圖目錄 vi
表目錄 xi
第一章 緒論 1
1-1 有機半導體 1
1-2 有機場效應電晶體 3
1-3 非揮發性場效應電晶體式光記憶體 8
1-4 有機-無機鈣鈦礦材料 14
1-5 嵌段共聚物 15
1-6 嵌段共聚物/鈣鈦礦複合材料 23
1-7 光照上網技術 26
1-8 研究動機 27
第二章 實驗方法 28
2-1 實驗材料與藥品 28
2-2 實驗設備 29
2-3 非揮發性場效應電晶體式光記憶體 30
2-3-1 嵌段共聚物/鈣鈦礦複合薄膜製備 30
2-3-2 有機半導體薄膜製備 31
2-3-3 熱蒸鍍電極及電性量測 32
第三章 結果與討論 34
3-1 嵌段共聚物/鈣鈦礦複合薄膜之鍵結分析 34
3-2 嵌段共聚物/鈣鈦礦與均聚物/鈣鈦礦薄膜抗溶劑探討 36
3-3 嵌段共聚物/鈣鈦礦與均聚物/鈣鈦礦複合薄膜之形貌分析 39
3-3-1 表面形貌掃描式電子顯微鏡分析 39
3-3-2 穿透式電子顯微鏡 41
3-3-3 低掠角小角X-Ray散射分析 43
3-4 低掠角廣角X-Ray散射分析 46
3-5 光記憶體中載子傳輸及儲存操作機制 48
3-6 光物理分析 50
3-7 光記憶體電性分析 61
3-8 結論 79
第四章 結論 80
4-1 結論 80
第五章 未來展望 81
5-1 未來展望 81

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