臺灣博碩士論文加值系統

完整化學配比，及膜層結構與塊材緻密性相當的金屬氧化物，二氧化鈦(TiO2)薄膜，在室溫的一般環境下，對可見光是透明的絕緣體。本研究透過摻雜別種金屬氧化物，期望能調變二氧化鈦(TiO2)薄膜的電學性質，增加導電性，但同時保持可見光的透明性。二氧化鈦(TiO2)薄膜的鈦離子是+4價，所摻雜金屬氧化物的金屬離子，若是比鈦離子多一價，即有機會改變透明二氧化鈦薄膜的電性。本研究選擇摻雜，金屬離子鈮(Nb+5)為+5價的五氧化二鈮(Nb2O5)氧化物。
薄膜成長的方法是:以溶膠凝膠(Sol Gel)法，於矽(Si)、藍寶石(Al2O3)及氧化銦錫(ITO)三種基板上，鍍製二氧化鈦(TiO2) ，摻雜莫爾百分比3% 及5% 五氧化二鈮(Nb2O5)的混合透明氧化膜，並在攝氏溫度600oC及一般大氣氣壓環境下，進行薄膜樣品的退火，分析薄膜的晶體結構，比較摻雜不同莫爾百分比五氧化二鈮(Nb2O5)的二氧化鈦(TiO2)薄膜之間，光學性質與電學性質的差異。
溶膠凝膠法，相較於其他亦可鍍製透明氧化膜的方法，如:“化學氣相沉積法(CVD)”、“電子束蒸鍍法”和“磁控濺鍍法”等，它可在室溫及大氣氣壓條件下操作，不像上述三種方法，需在低真空或高真空環境下，才可進行，大幅降低製程成本。

The titanium dioxide (TiO2) thin film, a metal oxide with complete stoichiometry and its structure compactness of thin film equivalent to the compactness of TiO2 bulk material, is a transparent insulator for visible light in general environment of room temperature. In this research, TiO2 thin film by doping with other metal oxide, it is expected that its electrical properties can be adjusted and conductivity can be increased in keeping its visible light transparency. The titanium ion of titanium dioxide (TiO2) film is a positive tetravalent ion. If the metal ion of metal oxide doped into TiO2 film is more positive monovalent than titanium ion, then having a possibility to change the electrical properties of the transparent titanium dioxide film. In this study, we select the niobium pentoxide (Nb2O5) with positive pentavalent niobium (Nb+5) ion doped into TiO2 thin film.
The method of thin film growth is: Sol Gel method, deposited titanium dioxide (TiO2) on three substrates of silicon (Si), sapphire (Al2O3) and indium tin oxide (ITO), doped with mole percentage 3 % and 5% niobium pentoxide (Nb2O5), to form transparent mixture oxide films and anneal the film samples at 600oC in general atmospheric pressure, then analyze the crystal structure of the films, compare the optical and electrical properties of titanium dioxide (TiO2) films doped with different mole percentages of niobium pentoxide (Nb2O5).
The sol-gel method compares with the other methods of coating thin film, such as: "chemical vapor deposition (CVD)", "electron beam evaporation" and "magnetron sputtering", etc. It can be operated at room temperature and atmospheric pressure. Unlike the above three methods, which need to be carried out in a low or high vacuum environment. So the Sol-Gel Method greatly reduces the cost of the thin film deposition process. 

目錄
摘要…………………………………………………………..………...…I
Abstract………………………………………………………………….……..II
致謝……………………………………………………….…………….…..…III
目錄…………………………………………………………….……………... IV
圖目錄………………………………………………………………….…..…VI
表目錄……………………………………………………………………..…VII
第一章 緒論…………………………………………………………………1
1-1研究動機與目的……………………………………………………1
1-2論文架構……………………………………………………………2
第二章 理論背景與原理介紹………………………………………………3
2-1透明導電薄膜………………………………………………………3
2-2二氧化鈦材料特性…………………………………………………3
2-3五氧化二鈮材料特性………………………………………………4
2-4溶膠凝膠法原理……………………………………………………4
第三章 實驗步驟與方法……………………………………………………6
3-1二氧化鈦摻雜氧化鈮之溶膠凝膠法溶液配製……………………6
3-1-1基板清洗……………………………………………………6
3-1-2配製步驟……………………………………………………6
3-1-3UV OZONE紫外光臭氧機…………………………………9
3-1-4旋轉塗佈機…………………………………………………10
3-1-5熱退火系統……………………………………………….…10
3-2實驗分析儀器………………………………………………………11
3-2-1橢圓偏光儀………………………………………….………11
3-2-2 X-ray繞射儀…………………………………..………….…12
3-2-3霍爾量測儀…………………………………………….……13
第四章 結果與討論…………………………………………………………16
4-1橢圓偏光儀分析……………………………………………………16
4-2 X-ray繞射分析……………………………………………………..18
4-3霍爾量測分析………………………………………………………22
第五章 結論與未來展望……………………………………………………24
第六章 參考文獻……………………………………………………………25
附錄…………………………………………………………………………27
 
圖目錄
圖3-1 純二氧化鈦薄膜製作流程圖…………………………………………8
圖3-2 3%鈮摻雜二氧化鈦薄膜製作流程圖…………………………………8
圖3-3 5%鈮摻雜二氧化鈦薄膜製作流程圖…………………………………9
圖3-4 橢圓偏光儀基本架構………………………………………………11
圖3-5 布拉格繞射示意圖…………………………………………………13
圖3-6霍爾效應原理示意圖………………………………………………15
圖4-1 純二氧化鈦成長於矽基版XRD量測結果…………………………18
圖4-2 3%鈮摻雜二氧化鈦薄膜成長於矽基版XRD量測結果……………19
圖4-3 5%鈮摻雜二氧化鈦薄膜成長矽基版XRD量測結果………………19
圖4-4純二氧化鈦薄膜成長於ITO玻璃基板XRD量測結果…………20
圖4-5 3%鈮摻雜二氧化鈦薄膜成長於ITO玻璃基板XRD量測結果…20
圖4-6純二氧化鈦薄膜成長sapphire基版XRD量測結果………………21
圖4-7 3%鈮摻雜二氧化鈦薄膜成長於sapphire基版XRD量測結果……21
圖4-8 5%鈮摻雜二氧化鈦薄膜成長於sapphire基版XRD量測結果……22

 
表目錄
表4-1矽基版上三種比例薄膜退火前橢偏儀量測結果…………………16
表4-2矽基版上三種比例薄膜退火後橢偏儀量測結果…………………16
表4-3玻璃ITO基版上三種比例薄膜退火前橢偏儀量測結果…………17
表4-4玻璃ITO基版上三種比例薄膜退火後橢偏儀量測結果…………17
表4-5藍寶石基版上三種比例薄膜退火前橢偏儀量測結果……………17
表4-6藍寶石基版上三種比例薄膜退火後橢偏儀量測結果……………18
表4-7三種比例鈮摻雜二氧化鈦薄膜成長在矽基版電性比較…………22
表4-8三種比例鈮摻雜二氧化鈦薄膜成長在玻璃ITO基板電性比較…23

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