鉭基（Ta-base）薄膜因具有優質的對銅擴散的阻障特性，至今仍是業界銅製程的標準化阻障層材料，唯其使用厚度會隨日益微縮的介電溝槽而同步需下降，以保留足夠的空間進行後續之電化學銅導線填充。但鉭基阻障層的超薄化將會導致其阻障性降低以及薄膜連續性不佳，從而衍生嚴重的銅導線系統可靠度問題。本論文藉由探討超薄鉭膜（膜厚< 2 nm）電化學輔助表面改質，生長多功能性（兼具阻障、附著強化與晶種捕獲）自組裝單層APTMS-SAM，利用雙重阻障結構複合強化銅擴散阻障性能。
本論文主要分成兩部分：第一部分，藉由Si/Ta（膜厚：20 nm）基材試片，以無水乙醇陽極氧化溶液透過循環伏安曲線觀察其陽極氧化行為，並添加少量水以及適當的電壓調控促進陽極氧化反應進行，將鉭阻障層經陽極處理使表面生成帶羥基（－OH）的親水性鈍化層Ta2O5表面，進一步透過表面鍵結分析、片電阻變化以及表面形貌與粗糙度觀察，取得最適化表面改質參數。隨後將改質完成的試片進行矽烷化處理，透過水接觸角變化與表面鍵結分析，可得知經過120 分鐘的生長即可使表面產生垂直有序的APTMS-SAM。經過一系列的晶種吸附/還原過程，並分別進行短與長時間的無電鍍銅析鍍，藉由SEM影像可得知其晶種密度極高，銅膜連續且平整無明顯的孔洞缺陷，並利用薄膜附著性量測分析，可以得知經適當陽極處理的「Si/Ta（含水氧化）/SAM/Cu」試片之附著性優於未經處理的「Si/Ta/SAM/Cu」試片。
後續將第一部份實驗結果導入「Si/Ta（膜厚：2 nm）」製程，探討陽極處理對超薄鉭膜阻障層之陽極氧化行為變化，透過表面片電阻、鍵結、形貌與微結構變化分析，取得最適化表面改質參數，並經過自組裝單層生長與一系列的晶種吸附/還原過程，沉積附著性良好的無電鍍銅膜。使用相對片電阻變化量測擴散溫度的臨界值以及SEM表面形貌觀察，可得知經最適化陽極處理的「Si/Ta（陽極氧化）/SAM/Cu」之阻障效果優於「Si/Ta /Cu」且臨界溫度亦由425°C提升至500°C。

Tantalum-base film has superior barrier property, and thus will be still the standard barrier material for the manufacturing of Cu interconnects. However, the thickness of Ta-base barrier layers has to be limited to 2 nm or less in order to leave minimized trenches (30-50 nm in width) with sufficient space for Cu-filling. Such ultrathin Tabase has weakened barrier capacity and discontinuous film structure, thus rendering difficulty in Cu-filling. In this study, a Versatility (both barrier, adhesion enhancement and seed capture) Self-Assembled-Monolayers APTMS-SAM on tantalum ultrathin film (film thickness <2 nm) by electrochemistry assisted surface modification. The double barrier structure is used to strengthen the copper diffusion barrier properties.
This study mainly contains two parts: In the first part, Si/Ta (film thickness: 20 nm) substrate test piece was used to observe the anodic oxidation reaction with a cyclic voltammetry curve based on an ethanol solution. A small amount of H2O is added with appropriate voltage regulation applied to promote the anodic oxidation reaction. As the Ta barrier layer is anodized, a hydrophilic passivation layer Ta2O5 with hydroxyl (－OH) is produced on the surface thereof. Further through surface bonding analysis, sheet resistance change, and surface morphology and roughness observation, the optimal surface modification parameters may be obtained. The modified Tantalum-base film was subjected to a silylation treatment. Through the change of water contact angle and surface bonding analysis, it was found that after 120 minutes of growth, vertically ordered APTMS-SAM can be produced on the surface. After a series of seed adsorption/reduction processes, short-term (5s) and long-term (30s) electroless copper precipitation, the SEM image shows that the seed density is extremely high, and the copper film is continuous and flat without obvious hole defects. Through Test of Adhesion, the adhesion of the anodized Si/Ta*/SAM/Cu specimen is preferably greater than that of the untreated Si/Ta/SAM/Cu specimen.
Subsequently, (in the second part,) the experimental results of the first part are introduced into the "Si/Ta (film thickness: 2 nm)" process to discuss the oxidation reaction of ultra-thin Tantalum-base film against anodic treatment. After self-assembled monolayer growth and a series of adsorption/reduction processes, an electroless copper film with good adhesion is deposited. By sheet resistance and SEM top view, it is taught that the modified Si/Ta*/SAM/Cu specimen was a better diffusion barrier than Si/Ta/Cu specimen, and critical temperature preferably increase from 425°C to 500°C.

摘 要........3
Abstract........4
目 錄........6
圖目錄........8
表目錄........11
第一章 緒論........12
1.1 前言........12
1.2 研究動機與目的........13
第二章文獻回顧........14
2.1金屬擴散阻障層之發展........14
2.2鉭的陽極氧化處理........16
2.3無電鍍銅金屬化製程........18
2.4自組裝單層應用........21
第三章 實驗步驟與分析原理........24
3.1 實驗整體製作流程........24
3.2 個別步驟說明........27
3.3 TEM平面試片製備........34
3.4實驗設備與分析儀器介紹........36
第四章 結果與討論........42
4.1 20 nm鉭薄膜陽極處理製程參數評估........42
4.1.1 電解質溶液之水含量對陽極氧化之效應―循環伏安分析........42
4.1.2 處理時間對試片之片電阻變化關係........45
4.2 鉭薄膜之矽烷化行為陽極氧化效益........51
4.3 無電鍍銅膜沉積及機械性質（附著強度）評估........56
4.3.1 晶種吸附與無電鍍銅膜沉積........56
4.3.2 銅膜附著強度評估........59
4.4 2 nm超薄鉭膜陽極處理效應評估........61
4.4.1 處理時間對試片之片電阻與表面形貌變化........61
4.4.2 陽極氧化之微結構與表面鍵解變化........64
4.4.3 陽極處理對鉭膜之阻障性能改變效應........68
4.5 陽極氧化對超薄鉭膜之矽烷化改善效益........71
4.6銅膜沉積與機械性質（附著強度）及擴散阻障評估........75
4.6.1 陽極氧化之銅膜沉積差異........75
4.6.2 銅膜附著強度與阻障性能評估........75
第五章 結論........81
參考文獻........83

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