本實驗以垂直式布里居曼法搭配粉末冶金方式(球磨、過篩、真空熱壓燒結)製備出 Sb2Se3熱電材料，並探討不同燒結溫度對顯微結構以及熱電特性的影響。藉由 OM 及 SEM 金相觀察並配合密度量測發現，隨著燒結溫度提升，能促使晶粒成長與提高燒結密度。由X光繞射分析結果顯示，粉末經熱壓燒結後可獲得單一相之Sb2Se3晶體。利用EDS分析確認所有樣本成分均接近Sb:Se=2:3。
對熱壓Sb2Se3試片進行熱電特性分析，分別量測電導率、Seebeck
係數，兩者皆隨著溫度上升而下降，最後計算功率因子隨溫度變化之
關係。在室溫時，燒結溫度 400°C 之試片有最佳熱電表現，電導率為
0.536 S/cm，Seebeck 係數值為 458.3 μV/K，最後計算功率因子值為0.113×10-3 W/mk2

In this study, Sb2Se3 thermoelectric matierials were prepared by verical Bridgman method combined with powder metallurgy(ball milling, sieving, vacuum hot pressing),and the effects of different sintering temperatures on microstructure and thermoselectric properties were investigated.
It was found by OM and SEM metallographic observation and density measurement that the grain growth and grain density increase with the increase of sintering temperature. The X-ray diffraction results showed that the powder was subjected to hot press sintering to obtain a single phase Sb2Se3 crystal. EDS results confirm that all sample components were close to Sb:Se=2:3.
The thermoelectric characteristics of the hot-pressed Sb2Se3 test piece were analyzed, and the electrical conductivity and Seebeck coefficient were measured respectively. Both of them decreased with the increase of temperature, and finally the relationship between the power factor and temperature was calculated. At room temperature, the sample with a sintering temperature of 400 ° C has the best thermoelectric performance, the electrical conductivity is 0.536 S/cm, the Seebeck coefficient is 458.3 μV/K, and the calculated power factor is 0.11 × 10-3 W/mk2.

摘要.i
Abstract.ii
目錄...iii
表目錄...viii
圖目錄...ix
第一章 緒論...1
1.1前言...1
1.2熱電材料的發展歷史...2
1.3熱電材料的應用...3
1.3.1熱電發電器(thermoelectric generator)...3
1.3.2熱電致冷器(thermoelectric cooler)...4
1.4 研究動機與目的...5
第二章 理論基礎與文獻回顧...7
2.1 熱電效應...7
2.1.1 Seebeck效應...7
2.1.2 Peltier效應...9
2.1.3 Thomson效應...10
2.2 熱電特性與功率因子...11
2.2.1 電導率...11
2.2.2 Seebeck係數...12
2.2.3 功率因子...13
2.3 熱電材料文獻回顧...14
2.3.1 熱電材料選擇...14
2.3.2 Sb2Se3簡介...15
2.3.3 Sb2Se3文獻回顧...17
2.4 行星式球磨法...17
2.5 燒結理論...18
2.5.1 燒結機構...19
2.6 垂直式布里居曼長晶法(vertical Bridgman method)...20
2.7 熱壓法(Hot pressing)...20
第三章 實驗方法與步驟...21
3.1 實驗流程...21
3.2 實驗製程介紹...23
3.2.1 材料準備...23
3.2.2 真空石英封管...23
3.2.3 垂直式布里居曼法...25
3.2.4 研缽研磨與行星式球磨...26
3.2.5 粉末過篩...28
3.2.6 粒徑分析...28
3.2.7 真空熱壓...29
3.3 試片性質分析...31
3.3.1 金相觀察...31
3.3.2 X-ray繞射分析...32
3.3.3 熱游離掃描式電子顯微鏡...33
3.3.4 密度量測...34
3.4 熱電性質量測...35
3.4.1電導率量測...36
3.4.2 Seebeck係數量測...38
3.4.3 霍爾量測...39
第四章 結果與討論...43
4.1 Sb2Se3塊體...43
4.2 粉末處理...44
4.2.1 製粉過篩...44
4.2.2 粉末粒徑分析...44
4.3 真空熱壓燒結...46
4.3.1 試片金相觀察...46
4.3.2 密度量測...48
4.3.3 EDS成分分析...48
4.3.4 XRD結晶結構分析...49
4.4 熱電性質...52
4.4.1 載子性質...52
4.4.2 電導率...53
4.4.3 Seebeck係數...55
4.4.4 功率因子...56
第五章 結論...58
參考文獻...60

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