臺灣博碩士論文加值系統

近20年來由於光纖通訊的普及化到近期的3D感測的應用全面展開尤其是在IOT、Automobile、AR/VR/MR以及AI等等的應用上，三五族化合物半導體雷射引起廣泛的討論及研究。垂直腔體雷射（VCSEL）不僅廣泛應用於數據通信更是3D視覺成像的重要元器件，為3D視覺提供成像光源。VCSEL以砷化鎵半導體材料為基礎研製，具有體積小、圓形輸出光斑、單縱模輸出、閾值電流小、價格低廉、易集成為大面積陣列等優點，現已廣泛應用於消費電子、自動駕駛、光通信、物聯網等諸多領域，是3D傳感和資料通信的關鍵元器件。隨著數據通信日新月異的發展，對頻寬的要求增加，本論文針對主動區中材料選擇，改善微分增益與增益抑制分子的大小，再加上多重量子井(MQW)與分開侷限異質結構(SCH)的設計，能增加主動層光學與電的侷限能力，同時設計短共振腔與提高鏡面反射率來增加VCSEL的操作頻寬。在本質區中多重量子井的材料中提高主動區中Indium的含量，在磊晶過程中會有應力生成，亦使微分增益大小發生變化。針對3D感測所需的陣列VCSEL在雷射輸出光功率以及遠場場型分佈的影響，我們探討感測器光源940 VCSEL的結構設計，如:量子井對數、p-DBR對數與氧化層厚度，對於雷射輸出光功率以及遠場場型分佈的影響，並優化出最佳條件。磷化銦材料由於其材料能階適用於1.3unm/1.5um波長的雷射設計，因此在光纖通訊的應用領域尤其重要，本論文在此材料的DFB雷射設計中，應用GRINSCH及Stained AlInAs設計優化斜率效率及響應頻寬。氮化鎵材料系VCSEL於2007年在交通大學研究團隊首次完成常溫電流操作後，許多研究團隊陸續投入氮化鎵系VCSEL研究，本論文設計復合式DBR的結構，下DBR為25對n摻雜的AlN/GaN材料，上DBR為7對無摻雜的SiO2/TiO2材料，並且採用tunnel junction來取代ITO layer，解決電流擁擠問題並且避免使用ITO的吸收問題。為提高光學增益，我們設計7λ的共振腔長度，並在主動區中置入10對的量子井結構，最後討論不同上DBR對數對輸出光功率大小的影響。本論文也針對VCSEL最重要的可靠性問題進行研究，並採用原子層沉積法(atomic layer deposition, ALD)進行三氧化二鋁薄膜沉積，進而大幅度改善元件可靠性。

In recent 20 years, from the popularization of optical fiber communication to the recent application of 3D sensing, especially in the applications of IOT, automobile, AR / VR / MR, AI and so on, the semiconductor lasers of III-V compound semiconductors have aroused extensive discussion and research. Vertical Cavity Surface-Emitting Laser (VCSEL) is not only widely used in data communication, but also an important component of 3D vision, providing imaging light source for 3D vision. VCSEL is developed on the basis of GaAs material. It has the advantages of small size, circular beam shape, single mode output, small threshold current, low price, easy to be integrated into large area array and so on. It has been widely used in many fields such as consumer electronics, automatic driving, optical communication, Internet of things and so on. It is the key component of 3D sensor and data communication. With the rapid development of data communication, the requirement of bandwidth is increasing. In this thesis, aiming at the material selection in the active region, the differential gain and gain suppression are improved. In addition, the design of MQW and SCH can increase the confinement of photo and electron of the active layer. At the same time, the design of short cavity and high reflectivity can increase the VCSEL's frequency response. To increase the indium content in the quantum well, there will be stress generation in the epitaxial process, and also the differential gain will change. In view of the influence of the array VCSEL needed for 3D sensing on the laser output power and far-field pattern distribution, we discuss the structural design of 940 VCSEL, such as: the number of quantum wells, p-DBR pairs and oxide layer thickness, on the laser output power and far-field pattern distribution, and optimize the best conditions. InP material is especially important in the field of optical fiber communication because its energy level is suitable for laser design of 1.3um/1.5um wavelength. In this thesis, GRINSCH and stained AlInAs are used to optimize the slope efficiency and bandwidth in DFB laser design. In 2007, GaN VCSEL was achieved current the operation of room temperature for the first time in the research team of NCTU. In this thesis, the structure of composite DBR is designed. The lower DBR is 25 pairs of N-doped AlN / GaN, the upper DBR is 7 pairs of undoped SiO2 / TiO2, and tunnel junction is used to replace ITO Layer to solve the problem of current crowded and avoid the absorption with ITO. In order to improve the optical gain, we design a 7 λ cavity length and place 10 pairs of quantum wells in the active region. Finally, we discuss the influence of DBR on the output optical power. In this thesis, the most important reliability problem of VCSEL is also studied, and Al2O3 thin film is deposited by atomic layer deposition (ALD), which can greatly improve the reliability of devices.

摘要......................... i
Abstract................... iii
誌謝......................... v
Context......................vi
List of Figures..............ix
List of Tables .............xiii

第1章 VCSEL雷射歷史 1
1-1、三五族材料應用於發光元件 2
1-2、VCSEL光與電的侷限 3
1-3、光纖通訊 6
1-4、3D感測 8
1-5、可見光通訊 10
Reference： 11
第2章 雷射理論 13
2-1、光與載子的交互作用 13
2-2、光與載子的侷限 13
2-3、雷射振盪條件 14
2-4、布拉格反射鏡結構設計 16
2-5、模型與材料參數 17
Reference : 18
第3章 VCSEL製程技術 19
3.1、Mesa Etching 19
3.2、Wet Oxidation 19
3.3、ALD Passivation 22
Reference : 24
第4章 高速850 nm VCSEL設計 28
4.1、動態分析 28
4.2、雷射高速調製的設計 30
4.3、高應變量子井設計 31
4.4、元件內部的寄生效應 33
4.5、量子井厚度與共振腔的長度的設計 40
Reference : 42
第5章 高功率940 nm VCSEL設計 43
5.1、靜態分析 43
5.2、主動區的光、電侷限能力 43
5.3、出光側DBR的設計 45
5.4、氧化層厚度對橫向輸出模態的影響 47
5.5、氧化孔徑大小對VCSEL輸出光功率的影響 49
Reference : 50
第6章 DFB雷射工作原理 51
6.1、耦合係數(κ)與邊模抑制比(SMSR) 51
6.2、傳遞矩陣法 (TMM) 52
第7章 DFB雷射材料選擇與結構設計 53
7.1、多重量子井對數對DFB雷射調變頻寬的影響 53
7.2、Graded-index Separate Confinement Heterostructure對DFB雷射光性與電性的影響 54
7.3、Strained Inner InAlAs Cladding對DFB雷射光性與電性的影響55
第8章 GaN-based VCSEL 59
8.1、GaN VCSEL發展歷史 59
8.2、GaN DBR的設計 64
8.3、p-GaN 電性優化 65
8.4、高功率的GaN VCSEL 69
Reference : 71
第9章 未来工作 74
Reference : 76

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