臺灣博碩士論文加值系統

本實驗室希望以鉛碘鈣鈦礦材料為主開發在大氣環境下具有能夠偵測到ppb等級濃度的氣體之靈敏度的氣體感測器。其中我們不僅在電極結構中使用垂直式通道結構、對更換電極材料也做了比較，更在薄膜製程上做了許多嘗試。我們比較了不同溶液製程的成膜方式，以及在鉛碘鈣鈦礦材料中摻入不同物質，其中以摻入硫氰酸根影響最大。我們發現摻入硫氰酸根後的元件在大氣環境下不只對硫化氫(H2S)有相當靈敏的反應，且對大氣的穩定性與對硫化氫的反應大小和無摻入時相比上升許多。對此結果我們認為相當有趣，因此針對摻入硫氰酸根材料的薄膜進行分析，並嘗試說明為何會有此結果的產生。

Our laboratory hopes to use lead iodine perovskite as the main sensing material to develop a gas sensor that can detect gas with a concentration of parts-per-billion (ppb) level in the ambient air. We have not only used vertical channel structures in the electrode structure, but also made a comparison on the replacement of electrode materials, and also made many attempts in the thin film manufacturing process. We compared the film-forming methods of different solution processes, as well as the inclusion of different substances in lead-iodine perovskite materials, in which the addition of thiocyanate has the greatest effect. We found that the components after doping thiocyanate not only have a very sensitive response to hydrogen sulfide (H2S) in the ambient air, but also the stability to the ambient air and the reaction to hydrogen sulfide are much higher than without doping thiocyanate. We think that this result is very interesting, so we analyze the film with doping thiocyanate material and try to explain why this result occurs.

中文摘要 …………………………………………………………………… I
英文摘要 …………………………………………………………………… II
致謝 …………………………………………………………………… III
目錄 …………………………………………………………………… V
圖目錄 …………………………………………………………………… VII
表目錄 …………………………………………………………………… IX
第一章 緒論
1-1 前言 …………………………………………………………… 1
1-2 研究動機 ……………………………………………………… 1
1-3 論文架構 ……………………………………………………… 4
第二章 鉛碘鈣鈦礦氣體感測器元件製程介紹
2-1 ITO 圖樣製程定義 …………………………………………… 5
2-2 鉛碘鈣鈦礦材料製程介紹 ………………………………… 7
2-2-1 鉛碘鈣鈦礦材料介紹 ……………………………………… 7
2-2-2 溶液製程不同成膜方式介紹 ………………………………… 8
2-2-3 一步旋塗法與兩步旋塗法介紹 …………………………… 9
2-3 垂直指叉式電極與水平指叉式鉛碘鈣鈦礦感測元件製程 … 10
2-3-1 垂直指叉式電極感測元件 ………………………………… 10
2-3-2 水平指叉式電極感測元件 ………………………………… 12
2-4 鉛碘鈣鈦礦氣體量測介紹 ………………………………… 13
2-4-1 鉛碘鈣鈦礦材料氣體感測機制介紹 ……………………… 14
2-4-2 氣體量測系統介紹 …………………………………………… 15
2-4-3 濕度控制系統介紹 …………………………………………… 15
第三章 純碘與摻入咖啡因之鉛碘鈣鈦礦氣體感測元件偵測一氧化碳應用
3-1 純碘鈣鈦礦氣體感測元件 ………………………………… 17
3-1-1 水平與垂直指叉式電極比較 ………………………………… 17
3-1-2 不同薄膜製程影響 …………………………………………… 18
3-1-3 不同配藥比例影響 …………………………………………… 21
3-1-4 蒸鍍不同電極對氣體的反應比較 …………………………… 21
3-2 摻入咖啡因之鉛碘鈣鈦礦氣體感測器 ……………………… 23
3-2-1 有無摻入咖啡因之反應大小比較 …………………………… 23
VI
3-2-2 摻入咖啡因後對元件壽命影響 …………………………… 24
第四章 硫氰酸鉛碘鈣鈦礦氣體感測元件偵測硫化氫氣體應用
4-1 硫氰酸鉛碘鈣鈦礦氣體感測元件 …………………………… 25
4-2 垂直指叉式與水平指叉式比較 …………………………… 26
4-3 不同電極金屬影響 …………………………………………… 26
4-3-1 電流與反應大小比較 ……………………………………… 26
4-3-2 壽命與穩定性比較 …………………………………………… 27
4-4 不同成膜方式影響 …………………………………………… 29
4-4-1 一步驟旋塗與兩步驟旋塗比較 …………………………… 29
4-4-2 不同塗佈方式比較 …………………………………………… 30
4-5 對不同氣體選擇性比較 ……………………………………… 33
4-6 元件有無照光影響 …………………………………………… 34
4-7 不同環境濕度對元件影響 ………………………………… 35
4-8 有無硫氰酸鉛碘鈣鈦礦氣體感測器差異 ………………… 36
4-8-1 電流大小與反應大小差異 ………………………………… 36
4-8-2 薄膜表面結構 AFM 與 SEM 差異 …………………………… 37
4-8-3 XRD 薄膜結構差異 …………………………………………… 39
4-8-4 元件壽命與穩定性比較 ……………………………………… 40
4-9 量測後保存方式對元件壽命影響 …………………………… 41
第五章 結論及未來展望
5-1 結論 …………………………………………………………… 43
5-2 未來展望 ……………………………………………………… 44
參考文獻 ………………………………………………………………… 45

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