臺灣博碩士論文加值系統

本論文研究以分子束磊晶系統成長氮化銦鎵薄膜與氮化鋁/氮化銦鎵異質結構於以有機金屬氣相沉積法所製備的氮化鎵基板上，目的是優化半導體特性以應用於高頻與高功率之高電子遷移率電晶體。特性利用低溫光激螢光光譜、低溫反射光譜與X光繞射分析。並且使用原子力顯微鏡、掃描式電子顯微鏡及於磊晶過程即時觀察反射式高能電子繞射圖形，分析其表面形貌。再透過調變銦、鎵元素通量與長晶溫度，成長銦組成含量為3.9% 至14.4%的氮化銦鎵薄膜樣品，而表面粗糙度低至0.63 nm，且並無相分離的現象。而後使用較高銦組成含量(14.4%)的氮化銦鎵作為通道層，成長氮化鋁/氮化銦鎵異質結構，其二維電子氣載子遷移率為515 cm2/V，而最佳的片電荷濃度為1.54×1013 cm-2，片電阻值為789 Ω/sq。

Molecular beam epitaxy was used to fabricate the InxGa1-xN thin films and AlN/InGaN hetero-structures on the GaN substrates grown by metal organic chemical vapor deposition to optimize the characteristics for the application in the high electron mobility transistor (HEMT) of high frequency and high power. The optical properties were studied by photoluminescence (PL), reflectance spectroscopy (R) and X-ray diffraction (XRD). The morphology was analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM), and in-situ reflective high energy electron diffraction. By the control of In/Ga flux ratio and growth temperature, we successfully optimized the InxGa1-xN (x=0.039 ~ 0.144) epilayers without phase separation and achieved the surface roughness of 0.63 nm. The electron mobility μ=515 cm2/V, sheet carrier concentration n=1.54x1013 cm-2, and sheet resistance R=789 Ω/sq could be achieved in the AlN/InxGa1-xN two dimensional electron gas (2DEG) hetero-structures with a high composition InxGa1-xN (x=0.144) channel layer.

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 緒論 1
1.1 氮化鎵研究背景與其應用 1
1.2 氮化銦鎵與二維電子氣異質結構 3
1.2.1 氮化銦鎵磊晶概述 3
1.2.2 三族氮化物晶體結構與極化 4
1.2.3 氮化鋁/氮化銦鎵異質結構 6
1.3 研究動機 7
第二章、實驗儀器與樣品製備 8
2.1樣品製備儀器與參數設定 9
2.1.1電漿輔助式分子束磊晶系統 ( plasma-assisted molecular beam epitaxy system, PA-MBE) 9
2.1.2 樣品製備 12
2.1.3 分子束磊晶參數 14
2.2 實驗分析儀器與原理 21
2.2.2反射光譜系統(Reflectivity spectroscopy) 24
2.2.3 X光繞射系統 ( X-ray diffraction system, XRD) 25
2.2.4原子力顯微鏡( Atomic force microscope, AFM) 26
2.2.5掃描式電子顯微鏡( Scanning electron microscope, SEM) 27
2.2.6霍爾量測系統( Hall measurement system) 28
第三章 結果與討論 30
3.1 氮化銦鎵薄膜光學特性分析 30
3.1.1 改變銦鎵元素通量比之氮化銦鎵光激螢光光譜分析 31
3.1.2 改變長晶溫度之氮化銦鎵薄膜光學特性分析 35
3.2 氮化銦鎵薄膜表面特性分析 43
3.2.2 改變長晶溫度之氮化銦鎵薄膜表面特性分析 46
3.2.3 不同組成之氮化銦鎵表面特性分析 49
3.3 氮化鋁/氮化銦鎵異質結構特性分析 51
第四章 結論 55
參考文獻 56

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