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研究生:顧鈞平
研究生(外文):Chun-Ping Ku
論文名稱:尖錐狀中空奈米結構陣列之製備及性質研究
指導教授:鄭紹良
指導教授(外文):Shao-Liang Cheng
學位類別:碩士
校院名稱:國立中央大學
系所名稱:化學工程與材料工程學系
學門:工程學門
學類:化學工程學類
論文出版年:2020
畢業學年度:108
語文別:中文
論文頁數:98
中文關鍵詞:矽化物奈米管
外文關鍵詞:silicide nanotube
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在本研究中,我們報導在製備出一維奈米結構後,以濺鍍金屬鎳薄膜技術結合氫氟酸修飾與鹼性蝕刻之新穎製程,成功地在(001)矽單晶基材製備出大面積規則準直排列之錐狀鎳奈米管陣列結構,並藉由調控氫氟酸修飾次數與濕式蝕刻時間可以分別控制矽單晶奈米管的內外徑以及長度。此外,若奈米管之間排列較緊密,因靜電屏蔽效應而嚴重影響場發射性質,因此本實驗嘗試以相同製備手法製備出間距較大、不同尺寸之錐狀鎳奈米管陣列結構。由場發射性質量測結果顯示,在相同高度下,口徑小之錐狀鎳奈米管與口徑較大之鎳奈米管相比,可以發現其場增強因子從7784提升至8517,起始電場從0.83 V μm-1下降至0.77 V μm-1,大幅提升場發射的效應。
在高度方面隨著高度下降在口徑約相同之條件下,可以發現其場增強因子從8517降至4821,起始電場從0.77 V μm-1下降至0.99 V μm-1,因此可以判斷高度對於場發射來說影響重大。將上述製程結合熱退火處理,成功製備出錐狀鎳矽化物奈米管陣列結構。
Abstract
In this study, we reported the fabrication about one-dimensional nanostructure, a novel process successfully fabricates a large-area, well-ordered of tapered nickel nanotube structure on (001) silicon substrate, which combining hydrofluoric acid modification and alkaline etching process, and the internal diameter and length of nickel nanotubes can be controlled by hydrofluoric acid modification and the wet etching time. In addition, if the nanotubes are crowded, the field emission properties are seriously affected by the screening effect. Therefore, this study attempts to fabricate the tapered nickel nanotube arrays of different sizes with the same method. Field emission measurement’s result show that at the same height, the small diameter tapered nickel nanotube compared with larger one shows that the field enhancement factor has been increased from 7784 to 8517, and turn-on field was reduced from 0.83 Vμm. -1 dropped to 0.77 Vμm-1, significantly enhancing the effect of field emission.
Under the condition that the aperture is the same, when the height decreased the field enhancement factor shifts from 8517 to 4821, and the initial incidence drops from 0.77 Vμm-1 to 0.99 Vμm-1. Combining the above process with thermal annealing treatment, also successfully fabricated a tapered nickel silicide nanotube arrays.
目錄
第一章 前言及文獻回顧 1
1-1 前言 1
1-2電子場發射電極元件 3
1-2-1 電子場發射相關理論 3
1-2-2一維單晶矽奈米結構應用於電子場發射之研究 4
1-2-3 奈米管結構應用於電子場發射之研究 5
1-3一維金屬奈米線與奈米管之製備 6
1-4金屬矽化物 7
1-4-1 金屬矽化物之製程與應用 7
1-4-2薄膜鎳金屬矽化物 9
1-4-3鎳金屬矽化物奈米線 9
1-4-4鎳矽化物奈米線應用於電子場發射之研究 10
1-5 研究動機及目標 12
第二章 實驗步驟及實驗設備 13
2-1 規則有序排列且準直之矽單晶奈米柱陣列結構 13
2-1-1 矽晶基材使用前處理 13
2-1-2 自組裝奈米球陣列模板製備 13
2-1-3 蒸鍍純金薄膜 14
2-1-4 金屬輔助催化蝕刻法製備矽單晶奈米柱陣列 14
2-2 規則有序排列且準直之鎳矽化物奈米管陣列結構 14
2-2-1 鎳薄膜之濺鍍沉積 14
2-2-2氫氟酸破壞頂部純鎳薄膜 14
2-2-3 選擇性蝕刻中心柱狀矽 15
2-3 規則有序排列且準直之錐狀鎳奈米管陣列結構 15
2-4 規則有序排列且準直之鎳矽化物奈米管陣列結構 15
2-4-1 鎳矽核殼奈米錐結構高溫熱退火處理 15
2-4-2氫氟酸破壞頂部純鎳薄膜並選擇性蝕刻中心殘餘鎳 16
2-5 試片分析 16
2-3-1 掃描式電子顯微鏡 16
2-3-2 穿透式電子顯微鏡 17
2-3-3 影像式水滴接觸角量測儀 17
2-3-4真空電子場發射性質量測系統 18
第三章 結果與討論 19
3-1 大面積週期性排列之金屬鎳奈米管陣列 19
3-1-1 聚苯乙烯奈米球模板製備 19
3-1-2 製備矽單晶奈米柱陣列並濺鍍金屬鎳 21
3-1-3 氫氟酸修飾頂部鎳並結合鹼性蝕刻法 22
3-2 大面積週期性排列之矽單晶奈米錐陣列 22
3-3 大面積週期性排列之鎳矽殼核奈米錐陣列 24
3-4 氫氟酸修飾鎳矽殼核奈米錐頂部 25
3-5 鹼性蝕刻法蝕刻頂部裸露之中心矽 27
3-6 電子場發射性質量測及探討 29
3-7 尖錐狀鎳矽化物奈米管陣列結構 31
第四章 結論及未來展望 34
參考文獻 36
表目錄 49
圖目錄 51
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