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研究生:劉佶隴
研究生(外文):CHI-LUNG LIU
論文名稱:射頻磁控濺鍍矽基鍺薄膜及光偵測器光電特性分析
論文名稱(外文):Germanium Thin Film on Silicon and the Characterization of Photodetectors
指導教授:張正陽張正陽引用關係陳昇暉
指導教授(外文):Jeng-yang ChangSheng-Hui Chen
學位類別:碩士
校院名稱:國立中央大學
系所名稱:光電科學與工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:108
語文別:中文
論文頁數:78
中文關鍵詞:薄膜光偵測器
外文關鍵詞:GermaniumThin FilmPhotodetectors
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摘要
本研究以射頻磁控濺鍍法在矽基板上成長鍺薄膜,並應用其製作光偵測器。鍺的能隙比矽還小,因此其吸收截止波長可達1550 nm以上,而且具有較高載子遷移率,而濺鍍法優勢在於無需使用有毒易爆炸之氣體以及低成本製程,利用濺鍍法成長鍺薄膜及探討薄膜品質,並應用於光偵測器,將收光範圍延伸至近紅外光區。
藉由調變濺鍍功率、正偏壓、氫氣流量,已於600°C時成長500 nm單晶鍺薄膜。於700°C退火後,鍺薄膜(400) XRD搖擺曲線之半高寬從2672 arcsec 降至2180 arcsec,且減少了其壓縮應力。此外加入硼顆粒共濺鍍退火後,可以得到摻雜濃度4.32×1019 cm-3及載子遷移率63.6 cm2/V-s之硼摻雜鍺薄膜。
700°C快速熱退火一分鐘之鍺薄膜光偵測器暗電流密度在-1V時約1.5 mA/cm2,其直徑180μm元件之850 nm波段光響應,在-1 V時為0.1 A/W,在-3 V時為0.2 A/W,在-3 V的1310 nm和1550 nm波段時分別為0.18 mA/W和0.14 mA/W。


Abstract
A germanium thin film was grown on a silicon substrate by RF magnetron sputtering to fabricate a near infrared photodetector .Because of the energy gap of germanium is smaller than silicon, its cut-off absorption wavelength can reach NIR up to 1550 nm, and it has high carrier mobility. The advantage of sputtering method is that it is not necessary to use toxic and explosive gas and also a low-cost process. In this research, the sputtering method was applied to grow the film, the thin film quality, and deposit it to fabricate the photodetector to extend the wavelength range to the near-infrared region.
A 500-nm single crystal germanium film has been grown at 600 ° C by adjusting the sputtering power, bias voltage, and hydrogen flow rate. After annealed to 700 °C, the full-width- half-maximum of the XRD rocking curve of the germanium film (400) decreased from 2672 arcsec to 2180 arcsec. Its compressive stress was reduced. In addition, the boron-doped germanium thin film with doping concentration of 4.32×1019 cm-3 and carrier mobility of 63.6 cm2/V-s was obtained by using co-sputtering boron particles and annealing process.
After 700 °C rapid thermal annealing, the dark current density of the NIR photodetector is about 1.5 mA/cm2 at -1V, and the optical response of the 850- nm band of the 180-μm diameter device is 0.1 A/W at -1 V. It is 0.2 A/W at -3V and 0.18 mA/W and 0.14 mA/W at -3 V for 1310 nm and 1550 nm, respectively.
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
1-3 研究目的與方法 3
第二章 基本原理及文獻回顧 4
2-1 鍺薄膜成長機制 4
2-2 鍺薄膜磊晶於矽基板技術 6
2-3 鍺薄膜磊晶於矽基板之方法 7
2-4 P-I-N結構光偵測器工作原理 9
2-5 矽基鍺光偵測器 11
第三章 實驗設備及分析儀器 12
3-1 實驗步驟 12
3-1-1以RF磁控濺鍍製備鍺薄膜與量測 12
3-1-2 P-I-N矽基鍺薄膜光偵測器製備 13
3-2 製程設備 16
3-2-1沉積設備 16
3-2-2 蝕刻機台 17
3-2-3 曝光機台 17
3-2-4 其他 17
3-3 量測機台 19
• 拉曼光譜儀(Raman Spectrometer) 19
• X光繞射分析儀(X-ray diffraction,XRD) 19
• 霍爾量測儀(Hall Measurement) 20
• 掃描式電子顯微鏡(SEM) 22
• 原子力顯微鏡(Atomic Force Microscope,AFM) 22
• 高解析度掃描穿透是式電子顯微鏡(Transmission electron microscope,TEM) 23
• 電流-電壓特性曲線量測 (I-V Characteristics curve) 23
第四章 薄膜及光電元件製備之結果討論 24
4-1 矽基鍺薄膜製備量測 24
4-1-1調變濺鍍功率影響 24
4-1-2調變正偏壓之影響 30
4-1-3 加入氫氣之影響 34
4-1-4 本質鍺退火 40
4-1-5 加入硼顆粒之影響 45
4-2元件量測 51
4-2-1暗電流之不同尺寸元件比較 51
4-2-2光電流之不同尺寸元件比較 54
第五章 結論與未來展望 57
5-1 結論 57
5-2 未來展望 57
參考文獻 58
參考文獻
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