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研究生:朱紳豪
研究生(外文):Shen-Hao ZHU
論文名稱:利用射頻磁控濺鍍製備p型氧化鋅薄膜
論文名稱(外文):Preparation of p-type ZnO films by RF Magnetron sputtering method
指導教授:陳怡嘉陳怡嘉引用關係林天財林天財引用關係
指導教授(外文):Yi-Jia ChenTien-Chai Lin
口試委員:陳怡嘉林天財傅彥培
口試委員(外文):Yi-Jia ChenTien-Chai LinYen-Pei Fu
口試日期:2020-01-13
學位類別:碩士
校院名稱:國立東華大學
系所名稱:材料科學與工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2020
畢業學年度:108
語文別:中文
論文頁數:83
中文關鍵詞:氧化鋅p型氧化鋅磁控濺鍍
外文關鍵詞:zinc oxidep-type zinc oxidesputteringmolybdenum
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本研究中以磁控濺鍍來製備p型氧化鋅薄膜,並藉由不同鉬功率摻雜來改變氧化鋅薄膜品質。
利用薄膜厚度量測對試片做薄膜厚度分析;場發射掃描點子顯微鏡對薄膜表面進行分析;紫外光與可見光吸收光譜量測薄膜的光吸收與透光率;X光繞射儀對樣品的結構與結晶性進行分析;X光線電子能譜分析薄膜元素組成及鍵結變化。
由實驗結果可以得知,在p型區域可以看到透光率下降。從XRD(002)峰值角度與晶面間距,在p型區域可以可以看到n型將轉變p型的過渡狀態。從半高寬與相對高度可以知道在p型區域間氧化鋅的結晶也是變為最好。從XPS 能譜圖看到在p型區域可以看到MoO2的峰上升和MoO3降低。
In this study, magnetron sputtering was used to prepare the p-type zinc oxide film, and the quality of the zinc oxide film was changed by doping with different molybdenum sputtering power.
Film thickness analysis was performed on the test pieces by film thickness measurement. The surface of the film was analyzed by a field emission scanning electron microscope. Ultraviolet and visible light absorption spectra were used to measure the light absorption and transmittance of the film. The film structure and crystallinity were characterized by X-ray diffraction (XRD). X-ray photo electron spectroscopy (XPS) was used to characterize the chemical concentration and characterize the bonds in the film.
From the experimental results, it can be seen that the transmittance decreases in the region for p-type formation. From the XRD (002) peak angle and the spacing between crystal planes, it can be seen that the n-type will transform to the p-type conduction state as molybdenum sputtering power increased beyond 35W. From the relative height and full width at half maximum results, it can be underlying that the crystallinity of zinc oxide in the p-type region is also the best. From the XPS spectrum, it can be seen the rise of MoO2 peak and the decrease of MoO3 peak in the p-type region.
中文摘要 I
Abstract II
目錄 III
圖目錄 VI
表目錄 XI
第一章 序論 1
1.1 前言 1
1.2 研究動機 2
第二章 文獻回顧 3
2.1 濺鍍原理 3
2.2 電漿原理 3
2.3 磁控濺鍍 3
2.4 氧化鋅性質與應用 4
2.5 氧化鋅性質與應用 5
2.6 鉬基本性質 5
2.7薄膜沉積原理 6
2.8 p型 ZnO 極可能是藉由晶界導通 6
第三章 實驗流程與實驗研究方法 8
3.1 實驗流程 8
3.2 實驗材料 9
3.3 實驗方法 9
3.3.1 實驗裝置與實驗步驟 9
3.3.2 實驗參數 11
3.4 薄膜試片分析 12
3.4.1 觀察薄膜厚度量測 12
3.4.2 薄膜電性分析 13
3.4.3 X光繞射分析 14
3.4.4 薄膜形貌觀察 16
3.4.5 薄膜透光率量測 17
3.4.6 觀察薄膜成分和比例 18
第四章 結果與討論 19
4.1 薄膜厚度之研究 19
4.2 薄膜形貌之研究 20
4.3 薄膜電性之研究 29
4.4 薄膜光學之研究 32
4.5 薄膜結晶之研究 37
4.6 薄膜XPS量測之研究 52
4.6.1 XPS Zn2p能譜 53
4.6.2 XPS O1s能譜 55
4.6.3 XPS MoO3能譜 63
4.6.4 XPS分峰是否正確的再次驗證 70
4.6.5 MoO2與MoO3消長的關係的另一表示法 72
第五章 結論 76
第六章 未來工作規劃 78
第七章 參考文獻 79
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