跳到主要內容

臺灣博碩士論文加值系統

(44.212.99.248) 您好!臺灣時間:2023/01/28 12:48
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:林彥昀
研究生(外文):Lin, Yen-Yun
論文名稱:應用於FeRAM之鐵電氧化鉿鋯電容特性及穿隧接面元件
論文名稱(外文):Ferroelectric HfZrO2 Capacitor and Ferroelectric Tunnel Junction for FeRAM Application
指導教授:李敏鴻
指導教授(外文):Lee, Min-Hung
學位類別:碩士
校院名稱:國立臺灣師範大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2020
畢業學年度:108
語文別:中文
論文頁數:52
中文關鍵詞:反鐵電材料氧化鉿鋯鐵電記憶體鐵電穿隧接面元件
外文關鍵詞:antiferroelectric materialsHfZrO2FeRAMFerroelectric Tunnel Junction
相關次數:
  • 被引用被引用:0
  • 點閱點閱:124
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
隨著氧化鉿(HfO2)鐵電(Ferroelectric, FE)特性的發現,可以彌補最新技術節點與鐵電非揮發性記憶體之間的微縮瓶頸。除了非揮發性,新穎的記憶體還應該保證足夠的可靠度並同時具備低延遲及低耗能的特性,與鈣鈦礦鐵電記憶體相比,鐵電鉿基氧化物具備與CMOS製程相容且有利於尺寸微縮的優勢。
本論文第一部份使用氧化鉿鋯(Hf0.5Zr0.5O2)作為元件的鐵電層,以TiN及TaN 分別作為MFM(Metal-Ferroelectric-Metal)的上電極金屬,發現TaN的應力能使鐵電薄膜有著較大的殘餘極化(Remnant Polarization, Pr),達到更好的記憶體特性。根據文獻,因反鐵電(Antiferroelectric, AFE)材料具有高耐久度的特性,故第二部分以高鋯濃度之氧化鉿鋯(HfxZr1-xO2)為鐵電層之MFM用於記憶體特性研究,並且達到耐久度(Endurance)超過1011次,使反鐵電材料能應用於FeRAM。另外,我們也將高鋯濃度之氧化鉿鋯,作為氧化鉿鋯鐵電穿隧接面(Ferroelectric Tunnel Junction, FTJ)元件之鐵電層,並成功區分出高阻態(High-Resistance State, HRS)與低阻態(Low-Resistance State, LRS),證實AFTJ具有成為未來新興記憶體的潛力。
With the discovery of ferroelectricity within hafnium-based oxide, the gap between state-of-the-art technology node and non-volatile memory can be addressed by ferroelectric materials. In addition to non-volatility, emerging memory should simultaneously meet the demand of remarkable reliability, low access latency and low power consumption. Contrary to perovskite-type ferroelectric materials, hafnium-based oxide is compatible with current CMOS processes and beneficial for scaling down.
The first part of this thesis adopts HfZrO2 as the ferroelectric layer. The TiN and TaN are served as capping electrode of MFM (metal-ferroelectric-metal), respectively. The stress from TaN capping metal brings larger remnant polarization of HZO and excellent memory performance. The excellent endurance of Antiferroelectric materials have been reported in some literature. In the second part, high zirconium concentration HfZrO2 integrated with MFM is studied for memory operation, and a superior 1011 cycles endurance is obtained. Beside, high-resistance state (HRS) and low-Resistance State (LRS) of antiferroelectric FTJ can be clearly distinguished for read-out. AFTJ has potential to be next generation emerging memory.
Publication i
期刊論文 i
研討會論文 i
中文摘要 iv
Abstract v
目錄 vi
圖目錄 viii
表目錄 xi

第一章 緒論 1
1-1記憶體簡介 1
1-2 鐵電材料簡介 3
1-3本論文架構 6

第二章 氧化鉿鋯之電極工程MFM鐵電記憶體特性 7
2-1 簡介 7
2-2 MFM製作流程 8
2-2-1 MFM之TiN上電極by PVD 8
2-2-2 MFM之TaN上電極by PVD 9
2-3 量測機台設定及方式 10
2-3-1 量測機台介紹-Radiant 10
2-3-2 遲滯曲線之量測(Hysteresis Loop) 11
2-3-3 量測機台介紹-Agilent B1500A、B1525A及B1530A 12
2-3-4 創建波形 14
2-3-4 MFM Reliability之Endurance量測 19
2-3-5 MFM Reliability之Retention量測 20
2-4 不同上電極之MFM實驗結果 22
2-4-1 MFM特性量測 22
2-4-2 MFM之Endurance量測結果 25
2-4-3 MFM之Retention 量測結果 26
2-5 結果討論與分析 27

第三章 不同鋯濃度之氧化鉿鋯MFM鐵電記憶體特性 29
3-1 簡介 29
3-2 MFM製作 30
3-3不同鋯濃度之氧化鉿鋯MFM實驗結果 31
3-3-1 MFM特性量測結果 31
3-3-2 Endurance量測結果 34
3-3-3 Retention量測結果 36
3-4 結果討論與分析 38

第四章 高鋯濃度之氧化鉿鋯鐵電穿隧接面(Ferroelectric Tunnel Junction, FTJ)元件特性 40
4-1 簡介 40
4-2 高鋯濃度之氧化鉿鋯鐵電穿隧接面元件波型設定及方法 43
4-3 高鋯濃度之氧化鉿鋯鐵電穿隧接面元件之實驗結果 44
4-3-1 高鋯濃度之氧化鉿鋯鐵電穿隧接面元件之特性量測 44
4-3-2 高鋯濃度之氧化鉿鋯鐵電穿隧接面元件之Endurance量測 46
4-4 結果討論與分析 47

第五章 總結與未來工作 48
5-1總結 48
5-2未來工作 48
參考資料 49
[1] C. Matsui, K. Takeuchi, ” Step-by-Step Design of memory hierarchy for heterogeneously-integratedSCM/NANDflash storage, ” ScienceDirect, vol. 69, pp. 62-74, 2019.
[2] N. Izyumskaya, Y.-I. Alivov, S.-J. Cho, H. Morkoc, H.Lee, and Y.-S. Kang, “Processing, Structure, Properties, and Applications of PZT Thin Films, ” Solid State and Materials Sciences, vol. 32, pp 111-202, 2007.
[3] T. Boescke, J. Heitmann, U. Schroder, “Integrated circuit with dielectric layer, ” US 7,709,359 B2, 2010 (Filing date 2007-09-05).
[4] T. S. Bösckea, J. Müllerb, D. Bräuhausc, U. Schröderd, and U. Böttgerc, “Ferroelectricity in Hafnium Oxide: CMOS compatible Ferroelectric Field Effect Transistors, ” in IEDM Tech. Dig., Dec. 2011, pp. 255-258.
[5] P. Polakowski, S. Riedel, W. Weinreich, M. Rudolf, J. Sundqvist, K. Seidel, and J. Müller, “Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory Applications, ” International Memory Workshop, Session 5-2, May . 2014.
[6] C. H. Cheng and A. Chin, “Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric, ” IEEE Electron Device Lett., vol. 35, no. 1, pp. 138-140, Jan. 2014.
[7] C. H. Cheng and A. Chin, “Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-κ Gate Dielectric, ” IEEE Electron Device Lett., vol. 35, no. 2, pp. 274-276, Feb. 2014.
[8] M. H. Park, H. J. Kim, Y. J. Kim, T. Moon,K. D. Kim, and C. S. Hwangn, “Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films, ” Nano Energy, vol. 12, pp. 131-140, 2015.
[9] Y. C. Chiu, C. H. Cheng, C. Y. Chang, M. H. Lee, H. H. Hsuand, and S. S. Yen, “Low Power 1T DRAM/NVM Versatile Memory Featuring Steep Sub-60-mV/decade Operation, Fast 20-ns Speed, and Robust 85oC-Extrapolated 1016 Endurance, ” in VLSI Technology Symp., Jun. 2015, pp. 184-185.
[10] S. Fujii, Y. Kamimuta, T. Ino, Y. Nakasaki, R. Takaishi, and M. Saitoh, “First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property, ” in VLSI Technology Symp., Jun. 2016, pp. 978-979.
[11] H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, J. Müller, P. Polakowski, T. Mikolajick, and S. Slesazeck, “Novel ferroelectric FET based synapse for neuromorphic systems, ” in VLSI Technology Symp., Jun. 2017, pp. 176-177.
[12] R. Eskandari, X. Zhang, and L. M. Malkinski, “Polarization-dependent photovoltaic effect in ferroelectric-semiconductor system, ” Appl. Phys. Lett., vol. 110, 2017, Art. no. 121105.
[13] M. Dragoman, M. Aldrigo, M. Modreanu, and D. Dragoman, “Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages, ” Appl. Phys. Lett., vol. 110, 2017, Art. no. 103104,
[14] J. V. Houdt, “Memory Technology for the Terabit Era: from 2D to 3D, ” in VLSI Technology Symp., Jun. 2017, pp. 24-25.
[15] S. W. Smith, A. R. Kitahara, M. A. Rodriguez, M. D. Henry, and M. T. Brumbach, and J. F. Ihlefeld, “Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films, ” Appl. Phys. Lett., vol. 110, 2017, Art. no. 072901.
[16] F. Huang, Y. Wang, X. Liang, J. Qin, Y. Zhang, X. Yuan, Z. Wang, B. Peng, L. Deng, and Q. Liu, “HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory, ” IEEE Electron Device Lett., vol. 38, no. 3, pp. 330-333, Mar. 2017.
[17] S. Müller, H. Mulaosmanovic, S. Slesazeck, J. Müller, and T. Mikolajick, “CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes, ” in SSDM (International Conference on Solid State Devices and Materials), Sep. 2017, pp. 539-540.
[18] J. Müller, T. S. Böscke, U. Schröder, Stefan Mueller, D. Bräuhaus, U. Böttger, L. Frey and T. Mikolajick, “Ferroelectricity in Simple Binary ZrO2 and HfO2, “ Nano Letters, vol. 12, no. 8, pp. 4318-4323, 2012.


[19] M. H. Park, Y. H. Lee, H. J. Kim, T. Schenk, W. Lee, K.D. Kim, Franz P. G. Fengler, T. Mikolajick, U. Schroeder, and C. S. Hwang, “ Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment, ” Nanoscale, vol. 9, pp. 9973-9986, 2017.
[20] T. Shiraishi, K. Katayama, T. Yokouchi, T. Shimizu, T. Oikawa, O. Sakata, H. Uchida, Y. Imai, T. Kiguchi, T. J. Konno, and H. Funakubo, “Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates, ” Materials Science in Semiconductor Processing, vol. 70, pp. 239-245, 2017.
[21] Premier II Ferroelectric Test System Brochure, pp. 1-2.
[22] B1500A Semiconductor Device Analyzer user’s manual, pp. 1,4-2,32.
[23] B1525A (B1500A-A25, B1500AU-025) High Voltage Semiconductor Pulse Generator Unit.
[24] Agilent B1530A Waveform Generator/Fast Measurement Unit, pp. 1,5-2,12.
[25] https://xiaoshanxu.unl.edu/system/files/sites/unl.edu.cas.physics.xiaoshan-xu/files/private/2016_01_29%20Yin_Ferroelectric%20measurement.pdf.
[26] Izyumskaya, Y.-I. Alivov, S.-J. Cho, H. Morkoc, H. Lee, and Y.-S. Kang, “The Scherrer equation versus the ‘Debye-Scherrer equation’, ” Nature Nanotechnology, vol. 6, pp 534, 2011.
[27] M. Pešić, S. Knebel, M. Hoffmann, C. Richter, T. Mikolajick, and U. Schroeder, “How to make DRAM non-volatile? Antiferroelectrics: A new paradigm for universal memories,” in IEDM Tech. Dig., Dec. 2016, pp. 298-301.
[28] M. H. Park, Y. H. Lee, T. Mikolajick, U. Schroeder, and C. S. Hwang, “Review and perspective on ferroelectric HfO2-based thin films for memory applications,” MRS Communications, vol. 8, no. 3, pp. 795-808, Sep. 2018.
[29] M. Kobayashi, Y. Tagawa, F. Mo, T. Saraya, and T. Hiramoto, “Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process, ” Journal of Electron Devices Society, vol. 7, pp. 134-139, 2019.



[30] H. H. Huang, T. Y. Wu, Y. H. Chu, M. H. Wu, C. H. Hsu, H. Y. Lee, S. S. Sheu, W. C. Lo, and T. H. Hou, “A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions, ” in IEDM Tech. Dig., Dec. 2019, pp. 298-301.
[31] T. Y. Wu, H. H. Huang, Y. H. Chu, C. C. Chang, M. H. Wu, C. H. Hsu, C. T. Wu, M. C. Wu, W. W. Wu, T. S. Chang, H. Y. Lee, S. S. Sheu, W. C. Lo, and T. H. Hou, “Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration, ” in IEDM Tech. Dig., Dec. 2019, pp. 118-121.
[32] R. Cao, Y. Wang, S. Zhao, Y. Yang, X. Zhao, W. Wang, X. Zhang, H. Lv, Q. Liu , and M. Liu, “Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films, ” IEEE Electron Device Lett., vol. 39, no. 8, pp. 1207-1210, Aug. 2018.
[33] J. Müller, T.S. Bösckee, S. Müller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin , T. Schenk , K. Khullar , A. Kersch , W. Weinreich, S. Riedel, K. Seidel, A. Kumar, T.M. Arruda, S.V. Kalinin, T. Schlösser, R. Boschke, R. van Bentum, U. Schröder, and T. Mikolajick, “Ferroelectric Hafnium Oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories, ” in IEDM Tech. Dig., Dec. 2013, pp. 280-283.
連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊