臺灣博碩士論文加值系統

鑒於異質接面雙極性電晶體有著高頻及高穩定性等等的優點，使得它在無線通訊中作為功率放大器，是不可或缺的存在。本文中，首先介紹了傳統雙極性電晶體基本特性，將會伴隨些不可免除的寄生效應，再者，透過將傳統窄能隙射極替換成寬能隙射極，以及提高基極摻雜濃度，進而成就現在所熟知的異質接面雙極性電晶體。

而本文採用之異質接面雙極性電晶體使用兩種不同之製程(i)金鈹-基極式(ii)埋入型金鈹-基極式，透過定義其特性參數，分析元件磊晶結構，如何製作及相關重要注意事項。分別以兩種不同參數對其特性作出判斷，其一，即以溫度為參數，透過量測二、三端特性，定義其基本參數，判斷是否具HBT之成效。其二，以時間為參數，即以高溫長時間量測特性變化，決定元件壽命。

而本文的確成功研擬了兩種不同製程之異質接面雙極性電晶體，如：在金鈹-基極式之HBT其射-基接面導通電壓為1.06 volt，透過擬合後發現，每10℃下降約20.7 mV，其射-基接面之反向飽和電流也透過實驗數據擬合後發現每5℃變為2.22倍。而在埋入型金鈹-基極式之HBT中，其最大增益約124，而其與在長時間下其特性也發現，其元件特性是相當穩定的。

Due to the heterojunction bipolar transistor have the high frequency and high stability, making it an indispensable presence as a power amplifier in wireless communication. In this paper, we introduce the bipolar junction transistors, which will be accompanied by some unavoidable parasitic effects. Furthermore, by changing the traditional narrow gap emitter with wide gap emitter, and increase the Base doping the concentration, it becomes the heterojunction bipolar transistor.

The heterojunction bipolar transistor used in this article uses two different processes (i) AuBe-Base type (ii) embedded AuBe-Base type, by defining its characteristic parameters, let us to know how to make it and remember related important notes. Two different parameters are used to judge their characteristics. First, use temperature as a parameter, and the basic parameters are defined by measuring the second and third terminal characteristics to determine whether it has the effect of HBT. Second, taking time as a parameter, and it means by measuring the characteristic change at high temperature for a long time, determines the life of the component.

And we have actually successfully developed two heterojunction bipolar transistors with different processes. The AuBe-Base type we call it “ traditional process “,it turn-on voltage while 0.1 mA is 1.06 volt, and after we fitting the data of turn-on voltage, from the data we can know every 10℃ drop 20.7 mV.

And the embedded AuBe-base type we know the maximum gain is 124, and it by the thermal annealing let this sample more stable.

摘要..........I
Abstract..........II
目錄..........III
圖目錄..........V
表目錄..........VII
第一章..........1
第二章..........3
2-1 簡介..........3
2-2 雙極性接面電晶體之回顧..........3
2-3 異質接面雙極性電晶體之回顧..........6
2-4 結論..........7
第三章..........8
3-1 簡介..........8
3-2 實驗步驟..........9
3-2-1 晶圓結構..........9
3-2-2 重要製程與製程參數..........10
3-2-3 HBT製程步驟及其等示意圖..........11
3-3 結論..........14
第四章..........15
4-1 簡介..........15
4-2金鈹-基極式HBT的實驗與測試..........16
4-3 實驗結果與討論..........17
4-3-1 金鈹-基極式HBT之EBJ特性..........17
4-3-2 金鈹-基極式之CBJ特性..........21
4-3-3 金鈹-基極式HBT之共射極特性..........24
4-3-4 金鈹-基極式之Gummel-plot特性..........26
4-3-5 120℃時之時間相依性特性..........30
4-4 結論..........32
第五章..........33
5-2 埋入型金鈹-基極式HBT製作與測試..........34
5-3-1 埋入型金鈹-基極式HBT之EBJ特性..........35
5-3-2 埋入型金鈹-基極式之CBJ特性..........38
5-3-3 埋入型金鈹-基極式HBT之共射極特性..........41
5-3-4 埋入型金鈹-基極式之Gummel-plot特性..........43
5-3-5 120℃時之時間相依性特性..........46
5-5 結論..........48
第六章..........49
參考文獻..........50
附件A..........54
A-1 金鈹-基極式..........54
A-2 埋入型金鈹-基極式..........56

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