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研究生:陳嘉漢
研究生(外文):Kenrick Chin Kar Han
論文名稱:探討P(VDF-TrFE-CTFE)固/液體介面效應的影響
論文名稱(外文):Study of Solid/ Liquid Interface Effect on P(VDF-TrFE-CTFE)
指導教授:林致廷林致廷引用關係
指導教授(外文):Chih-Ting Lin
口試委員:謝宗霖吳家豪
口試委員(外文):Jay ShiehChia-Hao Wu
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電子工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2019
畢業學年度:108
語文別:英文
論文頁數:56
中文關鍵詞:聚偏氟乙烯-三氟乙烯-三氟氯乙烯(P(VDF-TrFE-CTFE))電化學充電效應磁滯現象反應區
外文關鍵詞:P(VDF-TrFE-CTFE)electrochemical charging effecthysteresis phenomenonreaction sites
DOI:10.6342/NTU201904455
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定點照護檢驗系統(POCT)是下一代醫療保健系統的未來趨勢之一。因此,為定點照護檢驗系統開發的感測器應具有低成本,快速,方便使用,可攜帶和易於製造的特點。由於可攜帶和方便使用的目的,可繞式電化學感測器已經成為一個受矚目的發展方向。 在可繞式電化學感測器發展的各個方面中,固/液介面是其中一個應該著重探討的特性。為了探索固/液介面特性,本研究中使用了基於聚偏氟乙烯-三氟乙烯-三氟氯乙烯P(VDF-TrFE-CTFE)的電解質-絕緣體-半導體結構。實驗結果表明,P(VDF-TrFE-CTFE)EIS感測器存在漂移和磁滯現象,pH響應信號已被漂移反應所覆蓋。漂移和磁滯現象可歸因於電化學充電效應。 這可以解釋為當感測器與溶液接觸時,P(VDF-TrFE-CTFE)反應區與溶液中的陽離子進行質子化反應。此外,我們還研究了暴露時間,陽離子類型,離子濃度對磁滯現象的影響。 基於這項研究,評估材料反應區處於固/液介面狀態下的特性對於感測器應用上尤為重要。
Point-of-Care Testing (POCT) is one of the future trends in the next-generation healthcare system. Therefore, sensors developed for POCT should have characteristics of low-cost, rapid, user-friendly, portable and ease of fabrication. Due to the portable and user-friendly purposes, the flexible electrochemical sensor has become an interesting direction. In various aspects flexible electrochemical sensor development, solid/liquid interfaces are one of the important characteristics to be understood. To explore the solid/liquid interfaces in this study, P(VDF-TrFE-CTFE) based Electrolyte-Insulator-Semiconductor structure is used. The experiment results show that the P(VDF-TrFE-CTFE) EIS sensor existing drift and hysteresis phenomenon and the pH response signal has been covered by the drift. The drift and hysteresis phenomenon may be attributed to the electrochemical charging effect. This can be explained as the P(VDF-TrFE-CTFE) reaction sites having protonation by reacting with the cations in the exposure solution. In addition, we also investigated the exposed time, cation type, ion concentration effects on the hysteresis phenomenon. Based on this work, it is important to evaluate the material reaction-site characteristics at the solid/solution interface for sensor applications.
Abstract I
摘要 II
List of Figures V
List of Tables IX
Chapter 1 Introduction 1
1.1 Background 1
1.2 Point of Care Testing (POCT) 1
1.3 Electrochemical Sensor 2
1.4 Electrochemical Sensor Type 2
1.5 Motivation & Objective 3
1.6 Organization of the thesis 5
Chapter 2 Material & Theory Introduction 6
2.1 Ferroelectric Materials 6
2.1.1 Polymeric Ferroelectrics 6
2.2 Metal-Oxide-Semiconductor structure (MOS) 7
2.2.1 Electrolyte-Insulator-Semiconductor structure (EIS) 11
2.3 Electrical Double Layer (EDL) 12
2.4 Site-Binding Theory 15
2.4.1 Nernstian & Non-Nernstian Response 18
Chapter 3 Experiment Method 19
3.1 P(VDF-TrFE-CTFE) Solution Preparation 19
3.1.1 Materials 19
3.1.2 P(VDF-TrFE-CTFE) Solution Preparation 19
3.2 P(VDF-TrFE-CTFE) EIS Structure Sensor Fabrication 20
3.2.1 Wafer Cleaning 20
3.2.2 P(VDF-TrFE-CTFE) Sensing Membrane Deposition 21
3.2.3 Aluminium Back Contact Deposition 22
3.2.4 Sensing area Definition & Printed Circuit Board (PCB) bonding 23
3.3 P(VDF-TrFE-CTFE) Insulator-Metal Structure Fabrication 23
3.3.1 Wafer Cleaning 24
3.3.2 Metal Deposition 24
3.3.3 P(VDF-TrFE-CTFE) Membrane Deposition 24
3.4 Analyte Solution 25
3.5 Measurement Setup 26
3.5.1 Capacitance-Voltage (C-V) Measurement Setup 26
3.5.2 Surface Morphology Measurement Setup 27
Chapter 4 Results and Discussion 28
4.1 P(VDF-TrFE-CTFE) EIS Sensor pH response 28
4.2 P(VDF-TrFE-CTFE) EIS Sensor DI water & NaCl solution response 31
4.3 P(VDF-TrFE-CTFE) EIS Sensor Time-dependent Hysteresis Phenomenon 34
4.4 P(VDF-TrFE-CTFE) Thin Film Surface Morphology 44
4.5 P(VDF-TrFE-CTFE) Thin Film Surface Potential 46
Chapter 5 Conclusion 49
Reference 51
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