臺灣博碩士論文加值系統

氮化鎵被稱為第三代半導體材料，以其為材料的氮化鋁鎵/氮化鎵高電子遷移率電晶體，因具有二維電子氣以及寬能隙的特性，故在高頻高功率元件上具有極大的發展及應用空間。
本論文使用氮化鋁緩衝層磊晶之基板，在其磊晶片上製備高電子遷移率電晶體，元件製程中結合了 T 型閘極技術和鈍化層生長技術，並將所製備的元件進行高頻量測分析。
在論文第一部分，我們以信號流圖的觀點，重新推導了高頻元件所需用到的基礎微波理論，並且用此方法構建出了小訊號模型的精準 S 參數公式，用以擬合小訊號模型中各個電子元件的參數。
在論文第二部分，我們以電子束微影系統曝光三層光阻結構，並控制顯影的時間，在蒸鍍金屬後，成功製作出閘極線寬為 300 奈米、閘極頭寬為 700-900 奈米之T 型閘極。
在論文第三部分，我們分析了元件的直流特性，並藉由開路及短路襯墊進行去嵌化，將元件的本質參數萃取出來。證明了我們所設計的開路和短路襯墊符合開路短路襯墊去嵌化的條件。經過數據分析後，我們的 HEMT 元件在閘極電壓為-3.5 伏特，汲極電壓為 6 伏特時有截止頻率???????? = 10????????????, ???????????????? = 18????????????。

GaN is a prevalent third generation semiconductor material because of its 2DEG and broad energy gap, Therefore, high electron mobility transistors (HEMTs) based on GaN can be used to design high frequency or high power devices.
In this work, we fabricate HEMTs based on the structure that adopting AlN as an epitaxy buffer. The T gate and the epitaxy buffer technique are adopted in this work. In addition, we also analyze the devices in the high frequency domain.
This thesis is composed of three parts. First, we reorganize the micro wave theory with the viewpoint of the signal flow graph. Then, we use it to construct the small signal model and derive the S parameter formula. After that, we can fit a model and get all the parameters in the devices. Second, we design a three layers photoresist structure and use E beam to exposure. We control the exposure time and figure out the optimal. After Evaporating, we fabricate a T gate structure with 300 nm gate length and approximately 800 nm gate head length.
Last, the DC property of our devices is analyzed. We adopt open short pad de embedding to extract the intrinsic parameters of devices.Our HEMTs provide a 10 GHz current gain cut off frequency when the gate voltage is 3.5V, and the drain voltage is 6 V. The maximum oscillation frequency is 18 GHz.

口試委員審定書 i
致謝 .ii
中文摘要. iv
Abstract. v
目錄. vi
圖目錄. viii
表目錄. xii
第一章:緒論 1
1.1前言 1
1.2研究動機 2
1.3論文架構 4
第二章:微波理論探討及模型建構 5
2.1信號流圖(Signal Graph) 5
2.2線性信號流圖的性質 5
2.3梅森增益公式(Mason’s Gain Formula) 10
2.4二端網路(Two Port Networks) 11
2.5 Coates圖(Coates Graph) 16
2.6矩陣上消點運算 18
2.7二節點模型 19
2.8功率增益推導 20
2.9 S參數與ZY參數轉換推導 28
2.10開路襯墊去嵌化(Open Pad De-embedding) 36
2.11開路短路襯墊去嵌化(Open Short Pad De-embedding) 38
2.12小訊號模型建立及擬合 41
第三章:元件原理及製程量測 43
3.1氮化鎵材料 43
3.2氮化鋁鎵/氮化鎵異質結構 43
3.3歐姆接觸 44
3.4蕭特基接觸 45
3.5 T型閘極 46
3.6元件設計 47
3.7元件製程 51
3.8傳輸線模型(TLM)量測 58
3.9直流量測 59
3.10高頻量測 61
第四章:實驗結果與討論 63
4.1 T型閘極 63
4.2 TLM及直流量測結果 64
4.3高頻量測結果 66
第五章:結論與未來發展 81
參考文獻 83
附錄:一種信號流圖觀點下的逆矩陣運算 87

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