本研究，主要探討以自組裝單分子薄膜改質有機薄膜電晶體元件中不同的表面區域對於元件電性的影響。使用電晶體的結構為頂部閘極與底部接觸結構(Top-gate, Bottom contact)，其中ITO源極( Source )、汲極( Drain )與通道(Channel)上，皆以混合自組裝單分子薄膜調控表面特性。選擇兩種不同對位官能基之苯甲酸( Benzoic acid )作為混合自組裝單分子之材料，透過不同官能基之偶極矩改變ITO電極。於結果中發現，成長混合不同尾端官能基之苯甲酸溶液，修飾ITO電極，可將功函數調控至接近P型半導體的最高佔據分子軌道（HOMO），此方法可以使電晶體達到比較高的遷移率。此外，使用矽烷(Silane)的自組裝單分子薄膜，可同時修飾ITO電極與通道玻璃區域，探討通道上有無SAMs對於元件效能之影響，實驗結果發現通道改質對於元件效能影響較為顯著。

In this study, we utilized mixed self-assembled monolayers to modify the different regions of the device substrate and discuss the impact of these modifications on the electric characteristic of the organic thin-film transistors(OTFTs). A top-gate, bottom-contact device was used with the ITO source-drain electrodes and the channel region modified with mixed SAM. We show that passivating a mixed SAM which consists of two kinds of benzoic acid which contains different dipole moment constituent over ITO electrodes surface for changing the dipole moment and work function on ITO electrodes by a different functional group of SAMs. We found that when the work function of ITO electrodes is tuned to be close to the highest occupied molecular orbital (HOMO) level of p-type semiconductor by the mixed BA-SAMs method, a higher mobility than that on unmodified ITO electrodes can be reached. On the other hand, when mixed silane SAMs having the same function groups as the benzoic acid SAMs was used to modify the ITO electrodes and channel at the same time, the SAMs on the channel area has more impact on the electric property than the SAM on the electrode in a transistor.

中文摘要
Abstract
目錄
圖目錄
表目錄

第一章 緒論
1.1前言
1.2研究動機

第二章 有機電晶體簡介
2.1有機電晶體發展
2.2有機半導體材料介紹
2.3有機半導體傳遞機制
2.4薄膜電晶體概論
2.4.1薄膜電晶體操作原理
2.4.2薄膜電晶體之重要參數
2.5以自組裝單分子薄膜應用於有機薄膜電晶體之相關文獻
2.5.1自組裝單分子層薄膜簡介
2.5.2自組裝單分子薄膜成長方式
2.5.3自組裝單分子薄膜成長機制
2.5.4自組裝單分子薄膜應用於有機光電元件之文獻

第三章 元件製備與量測分析系統
3.1 儀器設備
3.2 實驗藥品與相關用品
3.3 實驗步驟
3.3.1基板圖案化流程
3.3.2自組裝單分子薄膜成長
3.3.3溶液配製
3.3.4有機薄膜電晶體之製備
3.4 元件電性之量測與分析
3.4.1半導體量測儀(Semiconductor Device Parameter Analyzer)
3.4.2電感電容阻抗量測儀 (Precision LCR meter)
3.4.3接觸角量測儀 (Contact Angle)
3.4.4單點式功函數量測儀 (Single point Kelvin Probe Measurement)
3.4.5原子力顯微鏡 (Atomic Force Microscope, AFM)
3.4.6 X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)
3.4.7 X光繞射儀 (X-ray Diffraction, XRD)

第四章 實驗結果與討論
4.1苯甲酸類單分子薄膜改質底部接觸之汲極與源極表面
4.1.1苯甲酸類(Benzoic acids)自組裝單分子薄膜之選擇性
4.1.2已改質之ITO電極接觸角與元素分析
4.1.3已改質之ITO電極功函數分析
4.2 矽烷類單分子薄膜改質底部接觸之汲極、源極與通道表面
4.2.1已改質之ITO電極與通道之接觸角與元素分析
4.2.2已改質ITO電極之功函數分析
4.3探討此兩種表面改質對於底部閘極與底部接觸元件之影響
4.3.1混合苯甲酸類SAM改質ITO電極
4.3.2混合矽烷基類SAM改質ITO汲極、源極與玻璃通道

第五章 結論與未來展望

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