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研究生:許展榮
研究生(外文):HSU, CHAN-JUNG
論文名稱:以鎳鈷鈦多層膜做為非線性電阻之研究
論文名稱(外文):Study on the use of nickel-cobalt-titanium Multilayer film as a nonlinear resistor
指導教授:李炤佑
指導教授(外文):LEE, CHAO-YU
口試委員:蔡朝伊余英松
口試委員(外文):TSAI, CHAU-YIYU, YING-SUNG
口試日期:2020-07-30
學位類別:碩士
校院名稱:國立虎尾科技大學
系所名稱:材料科學與工程系材料科學與綠色能源工程碩士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2020
畢業學年度:108
語文別:中文
論文頁數:81
中文關鍵詞:奈米鎳鈷鈦多層膜碳化矽矽基板電子束蒸鍍低溫快速退火
外文關鍵詞:nickel-cobalt-titanium multilayer filmsilicon carbidesilicon substrateelectron beam evaporationlow temperature rapid annealing
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Ni/Ti具有極佳的耐腐蝕性、良好的生物相容性、以及優良的強度與延展性,在各領域都是熱門的材料,也應用在醫學、光學、化學還有電學上。Co具有磁性,耐磨和高強度特性,其性質類似於Ni。因此選擇這三種材材料,透過多層膜的方式去探討Ni/Co/Ti多層膜的合金研究。
本實驗是探討低溫快速退火對 Ni/Co/Ti 多層膜之影響,研究不同的三層鍍膜週期數對多層膜快速退火前後相變化及物理性質之影響,本實驗使用碳化矽(SiC),矽基板(Si),作為基板蒸鍍。SiC 經過鑽石拋光盤研磨及添加雙氧水(H2O2)進行拋光得以清除SiC 基板表面上的二氧化矽 (SiO2),可以提供更為平整的表面進而提高鍍膜品質。SiC、矽基板經過試片前處理後以真空電子束蒸鍍機鍍膜,在總膜厚不變,Ni/Co/Ti 以不同週期數進行鍍膜,比例採用 1:1:2,當 Ni 為 1 nm、 Co 為 1nm、Ti 為 2 nm,最後都再鍍上 10nm 的 Ni 作為保護層。本研究以二種不同週期數的 Ni/Co/Ti 多層膜,在三種不同退火溫度(320℃、350℃、380℃)兩種不同氣體下進行快速退火 10 分鐘,經過快速退火後後,使 Ni 層、Co 層和 Ti 層相互反應產生相變化及物理性質改變。 運用原子力顯微鏡(AFM)和三維表面輪廓分析儀觀察退火前後的奈米多層膜的表面粗糙度變化,以掃描式電子顯微鏡(SEM)觀察退火前後奈米多層膜形貌變化,通過EDS分析奈米多層膜退火後單點成分,以 X-射線繞射分析(XRD)分析奈米多層膜之間的結晶性,使用四點探針觀察退火後對奈米多層膜之電性之影響。

Ni/ Ni/Ti has excellent corrosion resistance, good biocompatibility, and excellent strength and ductility. It is a popular material in various fields. It is also used in medicine, optics, chemistry, and electricity. Co has the characteristics of magnetic, wear resistance and high strength, and its properties are similar to Ni. Therefore, these three materials are selected, and the alloy research of Ni/Co/Ti multilayer film is discussed through the multilayer film.
This experiment is to investigate the effect of low temperature rapid annealing on Ni/Co/Ti multilayer films, and to study the effect of different three-layer coating cycles on the phase change and physical properties of multilayer films before and after rapid annealing. This experiment uses silicon carbide (SiC), silicon The substrate (Si), a glass substrate, is vapor-deposited as a substrate. SiC is polished by diamond polishing disc and polished by adding hydrogen peroxide (H2O2) to remove the silicon dioxide (SiO2) on the surface of the SiC substrate, which can provide a smoother surface and improve the coating quality. The SiC, silicon substrate, and glass substrate are coated with a vacuum electron beam evaporation machine after the pretreatment of the test piece. The total film thickness is unchanged, and Ni/Co/Ti is coated with different cycles. The ratio is 1:1:2. Ni is 1 nm, Co is 1 nm, Ti is 2 nm, and finally 10 nm of Ni is coated as a protective layer. In this study, two kinds of Ni/Co/Ti multilayer films with different cycle numbers were used for rapid annealing at three different annealing temperatures (320℃, 350℃, 380℃) and two different gases (nitrogen, argon) for 10 minutes. , Make Ni layer, Co layer and Ti layer react with each other to produce phase change and physical property change. Atomic force microscope (AFM) and three-dimensional surface profile analyzer (3D Surface Profilometer) were used to observe the surface roughness change of the nano multilayer film before and after annealing, and scanning electron microscope (SEM) was used to observe the change of nano multilayer film before and after annealing. Through energy dispersive X-ray spectroscopy (EDS) analysis of the single-point composition of the nano-layer film after annealing, X-ray diffraction analysis (XRD) was used to analyze the crystal structure between the nano-layer films, using a four-point probe (Four- point probe) to observe the effect of annealing on the electrical properties of the nano multilayer film.

摘要...i
Abstract...ii
誌謝...iv
目錄...v
表目錄...viii
圖目錄...ix
第一章 緒論...1
1.1前言...1
1.2研究動機與目的...2
第二章 理論基礎...3
2.1文獻回顧...3
2.2.1 沉積原理...4
2.2.2 電子束蒸鍍簡介...5
2.2.3 電子束蒸鍍原理...6
2.2.4 平均自由徑...8
2.3非線性電阻...10
2.4 Skrymions...10
2.5蒸鍍靶材與基板材料及其性質...12
2.5.1碳化矽基板...12
2.5.2單晶矽基板...14
2.5.3鎳靶...15
2.5.4鈷靶...15
2.5.5鈦靶...16
2.6快速退火快速升溫之熱輻射原理...16
2.7四點探針...17
2.7.1四點探針原理...18
第三章 實驗方法與步驟...20
3.1實驗設備...20
3.1.1 實驗設備...20
3.1.2後加工、量測及分析等其他設備...21
3.2 實驗參數...28
3.2.1膜厚參數...28
3.2.2退火參數...30
3.3實驗材料...30
3.4實驗流程...31
第四章 結果與討論...34
4.1 碳化矽基板及矽基板與鎳鈷鈦多層膜退火前後之表面形貌與粗糙度分析...34
4.1.1以表面輪廓儀分析鎳鈷鈦多層膜退火前後之表面粗糙度...34
4.1.2 以SEM 觀察碳化矽基板與矽基板鎳鈷鈦多層膜退火前後之表面形貌...50
4.1.3 以AFM 觀察碳化矽基板之表面粗糙度...55
4.2 碳化矽及矽基板與鎳鈷鈦多層膜退火前後之成分分析...57
4.2.1 EDS 分析鎳鈷鈦多層膜退火前後的成分...58
4.2.2 XRD 分析鎳鈷鈦多層膜與碳化矽基板與之間結構成分...60
4.2.3碳化矽基板與矽基板不同鍍膜層數前後退火之I-V曲線...64
4.2.4碳化矽基板與矽基板不同鍍膜層數前後退火之非線性電阻...69
第五章 結論...74
參考文獻...75
Extended Abstract...77


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