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研究生:蔡佳娟
研究生(外文):TSAI,CHIA,CHUAN
論文名稱:與製程相關的電晶體尺寸設計及電性參數的決定
論文名稱(外文):Transistor Size Design And Electrical Parameter Design Related To The Manufacturing Process
指導教授:楊信佳
指導教授(外文):YANG- HSIN-CHIA
口試委員:陳啟文張慶元楊信佳季松青
口試委員(外文):CHEN-CHII-WENCHANG-T.Y.YANG-HSIN-CHIAChi-Sung-Ching
口試日期:2020-12-18
學位類別:碩士
校院名稱:明新科技大學
系所名稱:電子工程系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2021
畢業學年度:109
語文別:中文
論文頁數:32
中文關鍵詞:FinFET元件3-D結構漏電流過度蝕刻過度曝光
外文關鍵詞:FinFET Devices3-D strutureLeakage currentOver ExposureOver Etch
相關次數:
  • 被引用被引用:6
  • 點閱點閱:191
  • 評分評分:
  • 下載下載:22
  • 收藏至我的研究室書目清單書目收藏:0
N-FinFET電晶體的製造看起來像三維鰭片,具有出色的可控性,特別是在短通道效應所造成的漏電流方面。此電晶體擁有更短的通道長度需仰賴於過度曝光和蝕刻的技術,本技術或可用於未來的先進製程開發的依據。
量測和分析具有不同通道長度和0.12/0.115/0.110微米鰭片寬度的電晶體,由電流-電壓的特性曲線,可決定此特徵曲線的常規公式中的kn(與通道長度,寬度,載子漂移率,及閘極電容相關的量)和(Early Voltage爾利電壓的倒數)作為電性的參考。不幸的是,經過貼合後,與通道長度密切相關的kn和λ,則在與其他相同通道長度的電晶體,其所得的kn和λ,比較後並不吻合公式要求,因此推論在製程製造過程中必然存在有不預期的尺寸損失(Dimension Loss) ,倘若以0.12微米的鰭片寬度的電晶體則能顯出kn和λ的合理性。0.12微米的鰭寬定下後鼓舞我們對所量測出來的數據深具信心促使我們用修正後的電流-電壓電性曲線公式,做貼合的研究其中包括kn,Vth,Lambda的取得一開始設定三個參數的起始值,然後以電腦程式算出公式所對應的電流-電壓值再與此值所量測出來做比較,其差值的平分做整合稱為偏差值,並取得偏差值最小值來修正,並逼進收斂於最後數值,其最後電性曲線圖令人興奮。

N-FinFET transistors are fabricated looking like 3-dimensional fin with excellent controllability, especially on short-channel leakage current. Over-exposure and over-etching are used to achieve much shorter channel length for future optional developments. Devices with 0.16 micron channel length with various fin-widths are measured and analyzed. kn and lambda (l) in the conventional formula of the characteristic curves are determined. Unfortunately, the lambda which is closely related to the channel length is found to inconsistent among the transistors with the same channel length. It is mandatory to assume that there must be unreasonable dimension losses during processing. The ratio of the channel width and the channel length can thus be evaluated according current versus voltage characteristic curves, and the dimension loss of the channel length is then determined.
Having recognized the feasible size of designs for layout, i.e., the fin width of the transistor channel set to 0.12micron, one is encouraged to fit the current-voltage characteristic curves using limited key parameters. Instead of eye-checking how close to the fitted data, one utilizes the computer program to approach to the measured data as closely as possible by defining the delta to understand the deviation between the measured data and the conventionally modified and parameterized formula. The corresponding results are actually inspiring as stated in the theis.

摘 要........................... i
Abstract.......................ii
誌 謝.........................iii
目 錄.........................iv
圖目錄........................... v
表目錄........................... vi
第一章 概論....................... 1
第二章 鰭鳞式半導體場效電晶體.........6
2-1 研究動機.......................6
2-2論文架構........................7
2-3結果與討論..................... 8
第三章 電晶體量測..................17
3-1 量測與貼合....................17
第四章 結論.......................25
參考文獻……………………………………………………………………………26

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[61]Hsin-Chia Yang, Cheng-Cian Wang, Sung-Ching Chi, Yu-Jung Liao " Evaluation and analysis of the effect of an insulated gated bipolar transistor on the electrical performance of trans-conductance”, Proceedings of the 2018 IEEE International Conference on Innovation CE, IEEE-ICICE 2018 - Meen, Prior & Lam (Eds, EI)
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