臺灣博碩士論文加值系統

In this work, we used Chemical Vapor Deposition to grow vertically aligned hollow Gallium Nitride and Zinc Oxide/ Gallium Nitride core shell structure using Zinc Oxide as a template in single and continuous step in CVD. The growth of both ZnO and GaN were carried out in CVD. We were able to successful grow the structure on various substrates like Silicon, Graphite sheet and Graphene/Sapphire substrate. We studied the dependence of various parameters like temperature, gas flow and pressure inside the CVD tube for growth of ZnO and GaN nanostructures. Furthermore, we were able to manipulate the diameter of the nanowires as a function of time. The thinnest nanowires achieved were 8 nm thick for GaN shell and 30 nm for ZnO core. The main purpose of the investigation was to grow vertically aligned nanowires without the use of hazardous gases used in MOCVD and/or use MBE to grow high quality GaN. This structure was used to study the piezoelectric effect and photo-piezoelectric effect of Hollow GaN and ZnO/GaN core-shell structure. Interesting phenomena of increasing piezoelectric effect under light illumination was observed in GaN for the first time. The mechanism of introduce polarization in wurtzite structure using Surface Plasmon Resonance has been proposed in this paper and how we can effectively combine polarization due to light + polarization due to piezoelectric effect to create nanogenerators with higher efficiency.

Abstract v
Acknowledgement vii
Table of Contents ix
Chapter 1 Introduction 2
1.1 Overview 2
1.2 Motivation 4
1.3 Objectives 8
Chapter 2 Theory 10
2.1 Properties of piezoelectric nanowires and piezogenerating devices based on 1D nanostructures: 10
2.2 Piezoelectric nanowires as energy harvesting 10
2.3 Size Effects 10
2.4 Shape effect 14
2.5 Nanowire synthesis techniques 16
2.6 Crystalline Materials 20
2.7 Semiconductors 24
2.7.1 Energy bands 24
2.7.2 Intrinsic and Extrinsic Semiconductors 28
2.8 Zinc Oxide and Gallium Nitride 32
2.8.1 Crystal structure 32
2.8.2 Electrical properties and defects of GaN 36
2.8.3 Electronic properties and defects of GaN 36
2.8.4 Intrinsic carrier concentration 38
2.8.5 Electronic properties and defects of ZnO 40
2.9 Modeling elastic and piezoelectric properties 46
2.9.1 Elastic properties 46
2.9.2 Piezoelectric properties 50
2.9.3 Piezoelectric response d 54
2.10 Piezo-phototronics 56
2.10.1 Overview 56
2.10.2 Basics of piezotronics and piezo-phototronics 58
2.10.3 Piezotronics and piezo-phototronics 60
2.11 Surface Plasmon Resonance 66
2.11.1 Theory: surface plasmons 66
2.11.2 Surface plasmons in metal films 72
2.11.3 Surface plasmon resonance in Gallium Nitride Nanowires 76
Chapter 3 Experimental Method 82
3.1 Chemical Vapor Deposition 82
3.1.1 CVD growth mechanism for GaN by template assist 84
3.1.2 Previous work: 84
3.2 Sputtering 87
3.3 Characterization Equipment 88
3.3.1 Ultrahigh Resolution Scanning Electron Microscope (UHR-SEM) 88
3.3.2 Energy Dispersive spectrometer (EDS) 92
3.3.3 h-GaN and ZnO/GaN Piezoelectric and Piezo-Photoelectric devices 94
Chapter 4 Results 96
4.1 Equipment used. 96
4.1.1 Magnetron Sputter 96
4.1.2 Chemical Vapor Deposition 96
4.1.3 PECS 96
4.1.4 SEM and EDS 96
4.1.5 Electrical characterization 96
4.1.6 Photoluminescence Spectroscopy 96
4.2 Synthesis of piezo-photoelectric Devices 98
4.2.1 Substrate cleaning: 98
4.2.2 Growth of ZnO buffer layer by sputter: 98
4.2.3 Single step ZnO template and GaN shell growth in CVD including ZnO template removal: 100
4.2.4 The gallium nitride growth as a function of pressure 102
4.3 Structural Characterization 104
4.3.1 Ultrahigh Resolution Scanning Electron Microscopy 104
4.3.2 Energy Dispersive Spectrometer 114
4.3.3 Fourier Transform Infrared Spectroscopy 118
4.3.4 Ultrahigh Resolution Scanning Electron Microscopy 122
4.3.5 X-ray photoelectron spectroscopy 128
4.3.6 Photo Luminescence Spectroscopy 130
4.3.7 UV-Visible SPECTROSCOPY 144
4.3.8 Piezoelectric and Photo-Piezoelectric Voltage and Current Measurement 148
4.3.9 Au-h-GaN-Si 148
4.3.10 h-GaN-Sapphire 154
ZnO/GaN/Si 160
4.3.11 ZnO/GaN/Sapp 166
4.3.12 Discussion 172
4.3.13 Green Illumination and IR Illumination in h-GaN/Si: 172
4.3.14 Green Illumination and IR Illumination in h-GaN /Graphene /Sapphire: 174
4.3.15 Green Illumination and IR Illumination in ZnO-GaN/Si: 176
4.3.16 Green Illumination and IR Illumination in ZnO-GaN/Sapp: 178
4.3.17 UV Illumination in h-GaN: 180
4.3.18 UV Illumination in ZnO-GaN: 182
Chapter 5 Conclusion 184
Chapter 6 Future Work 186
References 188

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