臺灣博碩士論文加值系統

Sb2Se3是近年來除了鈣鈦礦外熱門的薄膜太陽電池材料之一，但在Sb2Se3薄膜製備的過程中產生之Sb2O3或硒空缺(VSe)均可能會對薄膜特性造成不良影響，本研究目的在研究Sb2Se3薄膜製備的過程中之Sb2O3或VSe及其對Sb2Se3薄膜特性影響，並且利用H2硒化處理來減少Sb2O3形成或VSe以提升太陽電池的效能。實驗中我們使用DC及RF兩個不同濺鍍速率的製程及含H2硒化處理参數。實驗結果發現，RF試片較DC試片在硒化後Sb2Se3薄膜表層發現會有較多的氧含量及Sb2O3，霍爾分析發現在硒化後RF試片Sb2Se3吸收層半導體特性會由原先之p-type 轉為n-type。元件效率量測結果發現，n-type之RF試片相較於p-type之DC試片其JSC及元件效率均會明顯下降。含H2硒化處理可有效降低Sb2Se3薄膜中Sb2O3或VSe可提高其JSC及元件效率，在DC試片中可使Sb2Se3薄膜太陽電池效率從3.73 %(無H2)提升至4.53 %(含H2)。縮短製程時間或實施含H2硒化處理均可減少Sb2Se3吸收層中Sb2O3形成或VSe濃度，減少載子複合機率，進而提升太陽電池的效能。關鍵字:Sb2Se3薄膜太陽電池、H2硒化處理、硒空缺、Sb2O3、濺鍍

Sb2Se3 is one of the most popular material in thin film solar cell in addition to perovskites in recent years. However, Sb2O3 or selenium vacancies (VSe) generated during the preparation of Sb2Se3 films may have adverse effects on the film properties. The purpose of this research is studying Sb2O3 or VSe in the process of preparing the Sb2Se3 film. And the characteristics of the Sb2Se3 film,. Useing H2 on selenization treatment to reduce the formation of Sb2O3 or VSe, to improve the efficiency of the solar cell. In the experiment. We used two different power supply DC and RF on the sputtering, and selenization treatment parameters containing H2. The results found that the RF sample has more oxygen content and Sb2O3 than the DC sample on the Sb2Se3 film surface after selenization. Hall effect analysis found that RF sample semiconductor characteristics of the Sb2Se3 absorber layer will change to n-type after selenization. Component efficiency measurement results show that n-type RF sample has significantly lower JSC and efficiency than p-type DC sample. Selenization with H2 can effectively reduce Sb2O3 or VSe in the Sb2Se3 film to increase JSC and efficiency. In the DC sample, the efficiency of Sb2Se3 thin film solar cells can be increased 3.73 % (without H2) to 4.53 % (with H2). The process time reduction or containing selenization treatment with H2 can reduce the formation of Sb2O3 or VSe in the Sb2Se3 absorber layer that reduce the probability of carrier recombination, and thereby improve the efficiency of the solar cell.

目錄
摘要 I
Abstract III
目錄 V
表目錄 VIII
圖目錄 IX
第1章 緒論 1
1-1 研究目的 1
1-2 研究貢獻 2
第2章 理論分析與文獻回顧 3
2-1 Sb2Se3太陽電池材料結構與特性 3
2-1-1 薄膜太陽電池(Thin film solar cell) 3
2-1-2 Sb2Se3元件構造 5
2-1-3 Sb2Se3吸收層特性 6
2-2 Sb2Se3薄膜太陽電池及製備方法 10
2-3 Sb2Se3缺陷 14
2-4 H2處理應用於薄膜化合物太陽電池 16
第3章 研究方法 20
3-1 製備Sb2Se3元件 20
3-1-1 實驗材料與基板準備 23
3-1-2 Mo電極製備 24
3-1-3 Sb金屬前驅層製備 25
3-1-4 爐管硒化參數與步驟 26
3-1-5 硫化鎘(CdS)層製備 27
3-1-6 i-ZnO/ITO 窗口層製備 27
3-1-7 Al電極製備 28
3-2 Sb2Se3薄膜及元件特性之分析 29
3-2-1 熱場發射式掃描電子顯微鏡(FE-SEM、EDS) 29
3-2-2 X光繞射儀(XRD) 30
3-2-3 二次離子質譜儀 (SIMS) 31
3-2-4 感應耦合電漿質譜分析儀 (ICP-MS) 32
3-2-5 霍爾量測儀電性量測 (Hall effect analyzer) 33
3-2-6 表面化學分析(ESCA) 34
3-2-7 太陽光源模擬器 35
3-2-8 元件效率量測面積 36
第4章 結果與討論 37
4-1 Sb2Se3薄膜成分分析及形貌 37
4-2 Sb2Se3薄膜結構的分析 41
4-3 Sb2Se3薄膜光電性質影響 46
4-4 Sb2Se3元件效率比較 49
第5章 結論與未來研究 51
5-1 結論 51
5-2 未來研究 52
參考文獻 53

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