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研究生:楊育峻
研究生(外文):Yang, Yu-Jun
論文名稱:添加金屬鉭對金屬鎢硫化形成二維硫化物製程的影響
論文名稱(外文):Study of Tantalum Doping Effect on the Synthesis of Two-Dimensional Tungsten Disulfide
指導教授:鍾朝安鍾朝安引用關係李敏鴻
指導教授(外文):Jong, Chao-AnLee, Min-Hung
學位類別:碩士
校院名稱:國立臺灣師範大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文出版年:2021
畢業學年度:109
語文別:中文
論文頁數:60
中文關鍵詞:二階段合成共濺鍍技術摻雜二硫化鎢
外文關鍵詞:two-step synthesisco-sputtering systemDopingWS2
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層狀過渡金屬硫屬化合物是繼石墨烯被發掘後最為廣泛研究的一種奈米材料,它具有特殊的層狀原子排列結構而且具有的光電特性,已經在許多光電、電子、氣體或生物感測技術以及觸媒反應等方面被廣泛的研究。而這些特性可以透過改變堆疊的層數與材料成份的方式來加以變化。以這種方式調控的材料可以增加材料的適用範圍,但是如何加入雜質與相對應技術對於過渡金屬硫屬化合物的應用發展是一大挑戰。本論文將探討添加雜質元素的方法及雜質對二硫化鎢材料合成過程的影響。
本實驗採用二階段方式合成二硫化鎢,首先利用共濺鍍技術成長含雜質的鎢合金薄膜前驅物,透過硫化反應而成最終的二維材料。透過鍍膜參數控制厚度與成份。利用 X光繞射儀、X光光電子儀、拉曼光譜儀來分別探討合成後材料的顯微結構、鍵結能量與鍵結的判斷。用原子力顯微鏡來分析合成後材料的表面形貌。透過這些分析數據比對,來探討合金添加對WS2 硫化反應過程最佳化的影響。
Layered transition metal chalcogenides (TMDs) compounds are the most promising nano materials which are evaluated after graphene being discovered. TMDs have special two dimensional layered atomic structure, and its properties can be modified via the control of number of layers or changing its compositions. The controlled properties have been widely published in opto-electric, electronics, gas and bio sensing and catalytic research. Doping element and related techniques are a big challenge for current TMDs development. In this study, we will add some alloy element into the WS2 and study the doping effects on the process of film formation.
Here, a two-step synthesis was applied for TMDs formation. That is, the alloy precursor film prepared by co-sputtering system and sulfurized. The composition and thickness were well controlled via the parameters setting. XRD, XPS and Raman were used for the microstructure, binding energy and bonding inspection, respectively. AFM was used for the surface morphology observation. Comparing the analysis results, the doping effect on forming optimal sulfurization process of doped WS2 film was discussed.
Publication I
期刊論文 I
研討會論文 I
中文摘要 II
Abstract III
致謝 IV
目錄 V
圖目錄 VII
表目錄 X
第一章 緒論 1
1-1 二維材料製作合成方式 2
1-2 摻雜技術 4
1-3 透過摻雜鉭(Ta)改變特性 6
第二章 研究動機 9
2-1 前驅物摻雜概念 9
第三章 驗流程與實驗分析設備 11
3-1 實驗流程 11
3-1-1二階段製程形成摻雜二維材料流程圖 11
3-2 實驗設備 13
3-2-1共濺鍍機(Co Sputtering) 13
3-2-2高溫二維材料反應爐管 14
3-2-3高解析共焦拉曼顯微鏡光譜儀 ( High Resolution Confocal Raman Microscope ) 15
3-2-4光致螢光光譜儀( Photoluminescence Spectrum, PL ) 16
3-2-5 X光能譜儀 (X-ray photoelectron spectroscopy, XPS) 17
3-2-6 X光繞射儀 (X-ray diffractometer, XRD) 18
3-2-7掃描探針顯微鏡(Scanning probe microscopy,SPM) 19
第四章 結果與討論 20
4-1 雜鉭(Ta)的二維硫化鎢(Ta-WS2)薄膜前驅物製備 20
4-2 合金濺鍍過程之氧汙染分析 23
4-3 不同結構之氧汙染分析 24
4-3-1多層結構之氧汙染分析 26
4-3-2降低氧參與反應製程 28
4-4 摻雜鉭(Ta)的二維硫化鎢(Ta-WS2) 一階升溫硫化製程 30
4-4-1摻雜鉭(Ta)的二維硫化鎢(Ta-WS2) 二階升溫硫化製程 35
4-4-2摻雜鉭(Ta)的二維硫化鎢(Ta-WS2)硫化製程溫度曲線最佳化 39
4-4-3 W金屬薄膜硫化製程 44
4-5 摻雜鉭(Ta)的二維硫化鎢(Ta-WS2) X光光電子能譜(XPS)分析 47
4-5-1摻雜鉭(Ta)的二維硫化鎢(Ta-WS2) X光繞射分析(XRD) 51
4-5-2摻雜鉭(Ta)的二維硫化鎢(Ta-WS2)光學特性 53
4-5-3(Ta)摻雜鎢(W)二維硫化物表面形貌變化 54
第五章 56
5-1總結 56
5-2未來工作 57
參考資料 58
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