臺灣博碩士論文加值系統

本論文主要探討生長於多晶矽基板上的氧化鎵與氧化鋅二極體之製作以及其特性。第一部分為製成步驟以及沉積原理。第二部分為元件的電性與電致發光光譜量測。
元件的結構為ITO/NiO/Ga2O3/ZnO/ Ga2O3/ZnO/ Ga2O3/ITO。經由EDX、XRD等方式分析元件的元素比例以及晶性。自EDX可以得知元件的組成為氧化鎵、氧化鋅、以及ITO為主。XRD分析中得到氧化鋅的[h,k,l]= [0,0,2]，晶粒大小為25.33nm。
在元件電性與發光光譜的部分，元件的電流電壓特性除了呈現正常的二極體整流曲線外，在出現電壓崩潰後電流電壓特性出現了負微分電阻的現象。元件光譜的主要波長為500nm，隨著元件ITO厚度的不同，光譜也在不同的波長出現峰值。最後，對發光元件進行角度變化的量測。隨著量測角度的變化，光譜出現藍移，說明了人眼所觀察到的光色會隨著角度而有所影響。

This thesis mainly discussed the fabrication and the characterization of the gallium oxide- zinc oxide diode deposited on the polycrystalline silicon substrate. The first part of thesis was about the principles of the deposition equipment and the mechanism of deposition. The second part of thesis focused on the electrical and optical characterization of the devices.
The structure of the device was ITO/NiO/Ga2O3/ZnO/Ga2O3/ZnO / Ga2O3/ITO. Energy dispersion X-ray spectrometer (EDX) and X-ray diffraction (XRD) were used to analyze the ratio of elements and the crystal orientation. From EDX measurement, the elements, gallium oxide, zinc oxide, indium tin oxide did exist in the device. The XRD measurement found that zinc oxide exhibits a preferred orientation of [h,k,l]=[0,0,2], with an average grain size of 25.33nm.
In the chapter of electrical and optical measurements, the electric characteristic curve of the device showed a diode curve under forward bias. After a backward bias was applied, the curve exhibited a phenomenon of negative differential resistance under the second forward bias. The main wavelength on optical spectrum was 500nm. As the thickness of ITO changed, the variation of the peaks in spectrum were investigated. In the end, the angle-dependent electroluminescence was also investigated. As the measured angles increased, blue shifts were found in the spectrum, which explained the colors that human’s eyes observed would be influenced by observer’s angle.

Chapter 1 緒論 1
1.1 白光二極體簡介 1
1.2 氧化鎵與氧化鋅之發展 3
1.3.1 研究動機 5
1.3.2 論文概述 6
Chapter 2 發光二極體之原理 7
2.1 發光二極體原理 7
2.2 共振穿透二極體理論 9
Chapter 3 發光二極體之製作 12
3.1 濺鍍系統 (Sputtering system) 12
3.2 原子層沉積(Atomic Layer Deposition, ALD) 16
3.2.1 ALD技術發展沿革 16
3.2.2 ALD成長機制 17
3.2.3 電漿輔助原子層沉積(Plasma-Enhanced Atomic Layer Deposition, PEALD) 19
3.2.4 基板溫度 21
3.2.5 化學先驅物之蒸氣壓 21
3.3 元件製作流程 24
基板前處理 26
RF 濺鍍機系統沉積發光氧化層 27
高溫爐熱退火 27
ITO透明導電薄膜之濺鍍 27
蒸鍍電極 33
X光繞射分析(X-ray diffraction analysis, XRD) 34
X射線能量散譜儀(Energy Dispersive X-ray Spectrometer, EDS or EDX) 36
穿透式電子顯微鏡量測(Transmission electron scope, TEM) 37
Chapter 4 元件量測 43
4.1 量測系統架構 43
(a) 電性量測 43
(b) 光譜量測架構 44
4.2 色溫計算方法 46
4.2.1 色座標[13] 46
4.2.2 色溫 48
4.3 發光二極體量測 55
4.3.1 發光二極體之光譜 55
4.3.2 發光二極體之電性量測 68
4.3.3 角度變換量測 74
Chapter 5 結論與未來展望 78
5.1 結論 78
5.2 未來展望 79
參考文獻 81
附錄 85

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