臺灣博碩士論文加值系統

本研究在Pt/Ti/SiO2/Si基板上利用旋轉塗佈法(Spin coating Method) 分別製作BaTiO3 (BT)及(Ba0.92Ca0.08)(Ti0.95Sn0.05)O3 (BCTS)無鉛壓電陶瓷厚膜，再把BT當作BCTS的磊晶層，並藉由XRD、FE-SEM、PFM來分析探討材料晶相、表面微觀結構以及壓電特性。本研究分為三大部分：
第一部分：將BT利用固態反應法製備無鉛壓電陶瓷粉末，以三種不同溫度進行燒結，以最佳燒結溫度的粉末通過旋轉塗佈法沉積在Pt/Ti/SiO2/Si基板上，以三種不同溫度及四種不同持溫進行快速熱退火(Rapid Thermal Annealing, RTA)，形成BT/Pt/Ti/SiO2/Si結構。
第二部分：將BCTS利用固態反應法製備無鉛壓電陶瓷粉末，以四種不同溫度進行燒結，在以最佳粉末通過旋轉塗佈法沉積在Pt/Ti/SiO2/Si基板上，以四種不同溫度及四種不同持溫進行RTA，形成BCTS/Pt/Ti/SiO2/Si結構。
第三部分：延續第一及第二部分的最佳參數，將BT利用旋轉塗佈法沉積在Pt/Ti/SiO2/Si基板上，當作磊晶層，並形成BT/Pt/Ti/SiO2/Si結構，再將BCTS利用旋轉塗佈法沉積在BT/Pt/Ti/SiO2/Si基板上來當作壓電層，形成BCTS/BT/Pt/Ti/SiO2/Si結構。
由研究結果中得出BT厚膜最佳參數為：燒結溫度為1320℃/4h、RTA為700℃/10 min、結晶度為0.471、晶格常數為a = 3.985 Å、c = 4.015 Å為正方晶系、理論密度為6.075 g/cm3、平均粒徑為0.575 μm、表面粗糙度為94.1 nm、d33為44.66 pm/V、介電損耗為0.38。BCTS厚膜最佳參數為：燒結溫度為1350℃/4h、RTA為750℃/15 min、結晶度為0.583、晶格常數為a = 3.978 Å、c = 4.005 Å為正方晶系、理論密度為6.002 g/cm3、平均粒徑為0.533 μm 、表面粗糙度為127 nm、d33為98.35 pm/V、介電損耗為0.28。再以BCTS和BT的最佳參數來製作出BCTS/BT厚膜，其最佳參數為：結晶度為0.592、晶格常數為a = 3.982 Å、c = 4.011 Å為正方晶系、理論密度為6.09 g/cm3、平均粒徑為0.528 μm、表面粗糙度為113 nm、d33為121.92 pm/V、介電損耗為0.25，因此可知當加入BaTiO3當作磊晶層時，由XRD可看出是完整鈣鈦礦結構屬於正方晶相而且有效的提升BCTS/BT的結晶度以及理論密度，且由FE-SEM中也可看出有加入磊晶層的晶粒較為緻密。

By the spin coating method, BaTiO3 (BT) and Ba0.92Ca0.08Ti0.95Sn0.05O3 (BCTS) lead-free piezoelectric ceramic thick films were deposited on the Pt/Ti/SiO2/Si substrates, respectively. And we also used BT as the epitaxial layer of BCTS to improve its piezoelectric and dielectric properties. For measurement, the X-ray diffraction (XRD), field emission scanning electon microscope (FESEM), and piezoresponse force microscope (PFM) were used to analyze and observe their crystal phases, surface microstructure, and piezoelectric properties, respectively. This study will be divided into three major topics as follow:
A. By the solid state reaction, the BT lead-free piezoelectric ceramics were sintered by three different temperatures. The BT powder with optimum sintering temperature then was spin coating on the Pt/Ti/SiO2/Si substrate to form BT/Pt/Ti/SiO2/Si thick films. Finally, the rapid thermal annealing (RTA) treatment was used to improve their grain growth and performance.
B. Same as part A, but only the BT was changed to BCTS and thus form BCTS/Pt/Ti/SiO2/Si thick films.
C. Using the best fabrication parameters of part A and part B, the BT epitaxial layer was spin coating on the the Pt/Ti/SiO2/Si substrate, and then the BCTS piezoelectric layer was spin coating on the BT epitaxial layer to form a BCTS/BT/Pt/Ti/SiO2/Si thick film structure. Finally, the rapid thermal annealing (RTA) treatment was used to improve their grain growth and performance again.
For the BT/Pt/Ti/SiO2/Si thick films, the best fabrication parameters and results were: sintering parameter was 1320℃/4h; RTA parameter was 700℃/10 min; crystalline was 0.471; tetragonal phase and its lattice constants were a = 3.985 Å and c = 4.015 Å, respectively; theoretical density was 6.075 g/cm3; average grain size was 0.575 μm; surface roughness was 94.1 nm; d33 was 44.66 pm/V; dielectric loss was 0.38. For the BCTS/Pt/Ti/SiO2/Si thick films, the best fabrication parameters and results were: sintering parameter was 1350℃/4h; RTA parameter was 750℃/15 min; crystalline was 0.583; tetragonal phase and its lattice constants were a = 3.978 Å and c = 4.005 Å, respectively; theoretical density was 6.002 g/cm3; average grain size was 0.533 μm; surface roughness was 127 nm; d33 was 98.35 pm/V; dielectric loss was 0.28. However, for the BCTS/BT/Pt/Ti/SiO2/Si thick films, the best fabrication parameters and results were: crystalline was 0.592; tetragonal phase and its lattice constants were a = 3.982 Å and c = 4.011 Å, respectively; theoretical density was 6.09 g/cm3; average grain size was 0.528 μm; surface roughness was 113 nm; d33 was 121.92 pm/V; dielectric loss was 0.25. Thus, we can be concluded that as the BT was added as an epitaxial layer, the BCTS revealed complete perovskite structure of tetragonal phase, furthermore, not only the crystalline and theoretical density could be improved effectively, but also dense and uniform grains growth could be obtained.

目錄
摘要 iv
Abstract vi
誌謝 viii
目錄 ix
表目錄 xii
圖目錄 xiii
第一章 緒論 1
1.1 前言 1
1.2 含鉛壓電陶瓷 2
1.3 無鉛壓電陶瓷 4
1.3.1 鈦酸鉍鈉系無鉛壓電陶瓷 5
1.3.2 鈮酸鈉鉀系無鉛壓電陶瓷 6
1.3.3 鈦酸鋇系無鉛壓電陶瓷 6
1.4 研究動機 8
1.5 論文架構 9
第二章 理論基礎 10
2.1 壓電材料 10
2.1.1 壓電晶體 10
2.1.2 壓電陶瓷 10
2.1.3 高分子聚合物材料 11
2.1.4 壓電複合材料 11
2.1.5 正壓電效應 12
2.1.6 逆壓電效應 13
2.1.7 極化機制 14
2.1.8 壓電常數 17
2.1.9 晶體結構與特性 19
2.2 燒結原理 21
2.3 鈦酸鋇基本性質 23
2.4 沉積原理 26
2.5 射頻磁控濺鍍原理 28
2.5.1 磁控濺鍍 29
2.5.2 射頻濺鍍 29
2.6 溶膠凝膠法原理 30
2.7 旋轉塗佈法原理 31
2.8 快速熱退火原理 32
2.9 電極材料對薄(厚)膜性質的影響 33
2.10 X射線繞射儀原理 34
2.11 高解析場發射掃描式電子顯微鏡原理 36
2.12 原子力顯微鏡原理 36
2.13 壓電式電子顯微鏡原理 39
第三章 實驗方法 40
3.1 實驗流程 41
3.1.1 基板清洗 41
3.1.2 鍍製黏著層與下電極層 42
3.1.3 無鉛壓電陶瓷前驅溶液配置 43
3.1.4 旋轉塗佈與快速熱退火 45
3.2 分析儀器 46
3.2.1 X射線繞射儀 46
3.2.2 高解析場發射掃描式電子顯微鏡 46
3.2.3 原子力顯微鏡 46
3.2.4 阻抗分析儀 46
3.2.5 壓電式原子力顯微鏡 47
第四章 結果與討論 48
4.1 BT無鉛壓電陶瓷厚膜特性比較 49
4.2 BCTS無鉛壓電陶瓷厚膜特性比較 58
4.3 無鉛壓電陶瓷厚膜特性比較 65
第五章 結論與未來展望 70
5.1 結論 70
5.2 未來展望 72
參考文獻 73

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