|
[1]陳威廷, “以矽甲烷/氨氣/氮氣電漿沉積氮化矽薄膜之二維模型研究,” no. 2020年, pp. 1–104, Jan.2020, doi: 10.6840/CYCU202000618. [2]“劉志宏, 陳志瑋, and 林春宏, "大氣壓電漿表... - Google 學術搜尋.” https://scholar.google.com.tw/scholar?hl=zh-TW&as_sdt=0%2C5&q=劉志宏%2C+陳志瑋%2C+and+林春宏%2C+%22大氣壓電漿表面改質技術與其應用介紹%2C%22+化工資訊與商情%2C+pp.+39-51%2C+2006.&btnG= (accessed Jun.28, 2022). [3]D. (dian zi gong cheng)Zhuang and莊達人 (電子工程), “VLSI zhi zao ji shu”. [4]D.Smith, D. H.-P.Today, and undefined1996, “Thin-film deposition: principles and practice,” ui.adsabs.harvard.edu, Accessed: Jun.28, 2022. [Online]. Available: https://ui.adsabs.harvard.edu/abs/1996PhT....49d..60S/abstract [5]蔡旺霖 undefined, “微晶矽薄膜製程於高頻電漿反應器之電漿診斷與模型研究,” 2011, Accessed: Jun.28, 2022. [Online]. Available: https://www.airitilibrary.com/Publication/alDetailedMesh?docid=U0017-1511201111454406 [6]R.Ghodssi andP.Lin, “MEMS materials and processes handbook,” 2011, Accessed: Jun.28, 2022. [Online]. Available: https://www.google.com/books?hl=zh-TW&lr=&id=brkBFk1MH10C&oi=fnd&pg=PR5&dq=R.+Ghodssi+and+P.+Lin,+%22MEMS+materials+and+processes+handbook,%22+Springer+Science+%26+Business+Media,+vol.+1,+2011.&ots=SG9KkoqB0V&sig=8J3YKARPLHEnESxyS9-BUg3GMD8 [7]M. L.-A. of M. S. andEngineering and undefined2010, “Silicon nitride for photovoltaic application,” amse.acmsse.h2.pl, vol. 46, pp. 69–87, 2010, Accessed: Jun.28, 2022. [Online]. Available: http://www.amse.acmsse.h2.pl/vol46_2/4621.pdf [8]H.Dun, P.Pan, F. R.White, andR. W.Douse, “Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 Mixture,” J. Electrochem. Soc., vol. 128, no. 7, pp. 1555–1563, Jul.1981, doi: 10.1149/1.2127682/XML. [9]“半導體製程技術導論三版 X Hong - Google 搜尋.” https://www.google.com/search?q=半導體製程技術導論三版+X+Hong&rlz=1C1FKPE_zh-TWTW999TW999&sourceid=chrome&ie=UTF-8 (accessed Jun.28, 2022). [10]李世平 undefined, “電漿化學氣相沉積技術成長超低應力之紫外光可透性氮化矽薄膜,” 2010, Accessed: Jun.28, 2022. [Online]. Available: https://www.airitilibrary.com/Publication/alDetailedMesh?docid=U0030-2203201110553460 [11]S.Sze, “VLSI technology,” 1988, Accessed: Jun.28, 2022. [Online]. Available: https://ir.nctu.edu.tw/handle/11536/106818 [12]M.Ohring, “Materials science of thin films: depositon & structure,” 2001, Accessed: Jun.28, 2022. [Online]. Available: https://www.google.com/books?hl=zh-TW&lr=&id=m3fai5hbc94C&oi=fnd&pg=PP1&dq=M.+Ohring,+%22Materials+science+of+thin+films,%22+Elsevier,+2001.&ots=S3c5easgRr&sig=qxAy43SD8a2HD4asyfvmhyGaGR8 [13]K. K.Schuegraf, “Handbook of thin-film deposition processes and techniques : principles, methods, equipment, and applications,” p. 413, 1988. [14]K. D.Mackenzie, K. D.Mackenzie, B.Reelfs, M. W.Devre, R.Westerman, andD. J.Johnson, “Characterization & Optimization of Low Stress PECVD Silicon Nitride for Production GaAs Manufacturing”, Accessed: Jun.28, 2022. [Online]. Available: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.383.7392 [15]W.Soppe, H.Rieffe, andA.Weeber, “Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD,” Prog. Photovoltaics Res. Appl., vol. 13, no. 7, pp. 551–569, Nov.2005, doi: 10.1002/PIP.611. [16]K.Maeda, I. U.-J. of appliedphysics, and undefined1991, “Atomic microstructure and electronic properties of a‐SiNx:H deposited by radio frequency glow discharge,” aip.scitation.org, vol. 70, no. 5, p. 2745, 1991, doi: 10.1063/1.350352. [17]E.Douglas, P.Mahony, …A. S.-O. M., and undefined2016, “Effect of precursors on propagation loss for plasma-enhanced chemical vapor deposition of SiNx:H waveguides,” opg.optica.org, Accessed: Jun.28, 2022. [Online]. Available: https://opg.optica.org/abstract.cfm?uri=ome-6-9-2892 [18]“探討應用於雷射干涉重力波偵測器之以電漿輔助化學氣相沈積法製備於矽懸臂之氮化矽薄膜之材料特性與機械損耗__國立清華大學博碩士論文全文影像系統.” http://140.113.39.130/cgi-bin/gs32/hugsweb.cgi/ccd=KNuE6P/record?r1=1&h1=1 (accessed Jun.28, 2022). [19]T. J.Cotler andJ.Chapple‐Sokol, “High Quality Plasma‐Enhanced Chemical Vapor Deposited Silicon Nitride Films,” J. Electrochem. Soc., vol. 140, no. 7, pp. 2071–2075, Jul.1993, doi: 10.1149/1.2220766/META. [20]M.Helix, K.Vaidyanathan, B.Streetman, H. D.-T. S.Films, and undefined1978, “RF plasma deposition of silicon nitride layers,” Elsevier, Accessed: Jun.28, 2022. [Online]. Available: https://www.sciencedirect.com/science/article/pii/0040609078900822 [21]D. L.Smith, A. S.Alimonda, C.-C.Chen, S. E.Ready, andB.Wacker, “Mechanism of SiN x H y Deposition from NH 3‐SiH4 Plasma,” iopscience.iop.org, Accessed: Jun.28, 2022. [Online]. Available: https://iopscience.iop.org/article/10.1149/1.2086517/meta?casa_token=PztI5q7Qg3oAAAAA:Y0M1411-pb5zxMg0S2gIlm8jkodjoHnaE6FLfQ5eRCcG3T_4uLu8KOZ6Wizvu8v0Zo1dMP_Ogt8W [22]D.Smith, …A. A.-J. of V., and undefined1990, “Mechanism of SiNxHy deposition from N2–SiH4 plasma,” avs.scitation.org, vol. 8, no. 3, p. 551, May1990, doi: 10.1116/1.585008. [23]J.Wei, P.Ong, F.Tay, C. I.-T. S.Films, and undefined2008, “A new fabrication method of low stress PECVD SiNx layers for biomedical applications,” Elsevier, Accessed: Jun.28, 2022. [Online]. Available: https://www.sciencedirect.com/science/article/pii/S004060900701139X?casa_token=rZTQ2frNONIAAAAA:9KDI9ouvqGg9rJhHFMNV2ApAdqumudVFG4ZO7RR76Zncf1f4iuaBDuSh9dhtVGAaT1fShKRihrU [24]X.Chen, W.Xue, W.Ban, X.Jiang, W. S.-S.Energy, and undefined2016, “Influence of the chemical composition in SiNx films on silver paste contact formation at silicon surface,” Elsevier, Accessed: Jun.28, 2022. [Online]. Available: https://www.sciencedirect.com/science/article/pii/S0038092X16000025?casa_token=L1UQfdtAkb4AAAAA:lmR6GZNHkHnNHjIupneAh3C0f_mdw2OYrMopT8P7lImjNF1y5yuTUbOe-1RmpRYToXg6k_7VkS8 [25]K. R.Lee, K. B.Sundaram, andD. C.Malocha, “Deposition parameters studies of silicon nitride films prepared by plasma-enhanced CVD process using silane-ammonia,” J. Mater. Sci. Mater. Electron., vol. 4, no. 4, pp. 283–287, Dec.1993, doi: 10.1007/BF00179225. [26]H.Xia, D.Xiang, W.Yang, P. M.-S. and C.Technology, and undefined2016, “Multi-model simulation of 300 mm silicon-nitride thin-film deposition by PECVD and experimental verification,” Elsevier, Accessed: Jun.28, 2022. [Online]. Available: https://www.sciencedirect.com/science/article/pii/S0257897216302833?casa_token=WIsnniEzFNoAAAAA:sHYBfNl_Nck3ASMs79BrQXTS1TPgidsGonEr6vwtwHACNvd6HK2RcVW-JniGMfuXgXHnGV0pT50 [27]J.Zheng, D.Tan, P. C.-Process, undefinedEquipment, undefinedand, and undefined1996, “Characterization and in-line control of UV-transparent silicon nitride films for passivation of FLASH devices,” spiedigitallibrary.org, Accessed: Jun.28, 2022. [Online]. Available: https://www.spiedigitallibrary.org/conference-proceedings-of-spie/2876/0000/Characterization-and-in-line-control-of-UV-transparent-silicon-nitride/10.1117/12.250915.short [28]K.Sundaram, R.Sah, …H. B.-M., and undefined2003, “Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition,” Elsevier, Accessed: Jun.28, 2022. [Online]. Available: https://www.sciencedirect.com/science/article/pii/S016793170300412X?casa_token=gIhXTpq_CaEAAAAA:mobTIktQjRJuDBbfkkOwm20FTGYP2I1rONjPsSgKv-SsKvp4H6V3kay6509lgLYckt8_2S_yCQ4 [29]J.Han et al., “Low stress PECVD—SiNx layers at high deposition rates using high power and high frequency for MEMS applications,” iopscience.iop.org, vol. 16, pp. 869–874, 2006, doi: 10.1088/0960-1317/16/4/025. [30]H.Xu, Z.He, Q.Huang, D.Luo, …J. H.-… S. on M., and undefined2015, “Study on the Preparation Technology of SiNx Thin Film by PECVD,” atlantis-press.com, 2015, Accessed: Jun.28, 2022. [Online]. Available: https://www.atlantis-press.com/proceedings/ism3e-15/25846127 [31]A.Dollet, J.Couderc, B. D.-P. S. S.and, and undefined1995, “Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. II. Simplified modelling, systematic analysis,” iopscience.iop.org, vol. 4, pp. 107–116, 1995, Accessed: Jun.28, 2022. [Online]. Available: https://iopscience.iop.org/article/10.1088/0963-0252/4/1/011/meta?casa_token=3qvmuB1Zv5kAAAAA:Et33Bjgf4EuTZwu7NKKS3T0GtGCQfsiUhzLcncjTv08Xy4Me2Jc36BKfFoKcYioAyb6UFE_zRQ9q [32]M.Shahini et al., “Comprehensive simulation of the effects of process conditions on plasma enhanced chemical vapor deposition of silicon nitride,” iopscience.iop.org, vol. 23, p. 95023, 2008, doi: 10.1088/0268-1242/23/9/095023. [33]H. J.Kim, W.Yang, andJ.Joo, “Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in SiH4/NH3/N2/He capacitively coupled plasmas,” J. Appl. Phys., vol. 118, no. 4, Jul.2015, doi: 10.1063/1.4927531. [34]吳宗儒 undefined, “以電漿化學氣相沉積法製備氮化矽之製程模擬與電漿模型分析研究,” 2018, Accessed: Jun.28, 2022. [Online]. Available: https://www.airitilibrary.com/Publication/alDetailedMesh?docid=U0017-2808201812075600 [35]“沉積本質非晶矽薄膜之矽烷/氫氣電漿數值... - Google 學術搜尋.” https://scholar.google.com.tw/scholar?hl=zh-TW&as_sdt=0%2C5&q=沉積本質非晶矽薄膜之矽烷%2F氫氣電漿數值模擬與實驗研究&btnG= (accessed Jun.28, 2022). [36]T. J.Sommerer andM. J.Kushner, “Numerical investigation of the kinetics and chemistry of rf glow discharge plasmas sustained in He, N2, O2, He/N2/O 2, He/CF4/O2, and SiH4/NH 3 using a Monte Carlo-fluid hybrid model,” J. Appl. Phys., vol. 71, no. 4, pp. 1654–1673, 1992, doi: 10.1063/1.351196.
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