臺灣博碩士論文加值系統

絕緣閘雙極性電晶體 (Insulated Gate Bipolar Transistor, IGBT) 是中高功率電子產品中最常使用的開關元件，為了改善關斷損耗 (Eoff) 和導通電壓 (VCE(sat)) 之間的權衡，許多的技術被陸續提出，例如：場截止 (Field Stop, FS) 型 IGBT、載子儲存溝槽式閘極雙極性電晶體 (Carrier Stored Trench Gate Bipolar Transistor, CSTBT)、閘極注入增強型電晶體 (Injection Enhanced Gate Transistor, IEGT)…等，因為在導通時 IGBT 經常需承受很大的電流，若導通電壓大，則 IGBT 本身所消耗的功率也大，這不僅影響能源利用效率，同時對於本身的散熱也是一個大問題。
IGBT 另一重要指標為元件短路能力，在外接電路故障短路時，此時流經 IGBT 之電流即為該集極電壓下的飽和電流，為避免燒毀通常會設計保護電路，但是啟動保護需要時間，所以定義當 IGBT 可同時承受高電壓及高電流操作的時間越久，即為有更好的短路能力，而其中一種改善方法是想辦法降低元件的飽和電流，所以如何在提升短路能力的情況下同時保持低導通電壓成為學術界的一大研究重點。
過去國內論文較少對於高壓 IGBT 研究，尤其是對於 3300 V 級距的 IGBT 元件，由於此級距元件經常需要操作在較大的電壓電流，同樣的導通電壓對於元件的損耗值也會跟著放大，並且短路能力也會變得非常脆弱，為了改善此缺點本篇將提出新設計，並且研究新設計對於高壓元件能有多少改善能力，所以我們將 IGBT 元件設計在 3300 V 耐壓下，並且提出一新結構改善導通電壓及短路能力，最後我們利用模擬軟體 ISE-TCAD 進行各種特性研究及分析，並與傳統溝槽式閘極結構 IGBT 進行比較。

The insulated gate bipolar transistor (IGBT) is the most common-ly switching device used in medium and high power electronics. To improve the trade-off between the on-state voltage (VCE(sat)) and turn-off loss (Eoff), many research have been proposed, e.g., field stop (FS) IGBT, the carrier stored trench-gate bipolar transistor (CSTBT), the injection enhanced gate transistor (IEGT), etc. The IGBT often needs to withstand a large current when it is turned on. If the on-state volt-age is large, the power dissipation by the IGBT is also large. This not only affects the efficiency of energy, but also a big problem for its heat dissipation.
Another important point of IGBT is the short-circuit capability of the devices. When the external circuit is faulty and short circuited, the current through the IGBT is the saturation current at the collector voltage. Protection circuits are usually designed to avoid burnout, but it takes time to activate the protection. Therefore, it is defined that the longer the IGBT can withstand high voltage and high current opera-tion at the same time, the better the short circuit capability. The one improvement way is to reduce the saturation current of the device. How to keep low on-state voltage while improving the short circuit capability has become major research for academia.
In the past, there were few domestic papers on high-voltage IGBT research, especially for IGBT device with a 3300 V. Due to the device often operation at a large voltage and current, the power loss of the same on-state voltage for the device will also be amplified, and the short circuit capability will also become very weak. To research how much the proposed new design can improve in the high voltage devic-es, we designed an IGBT under 3300 V, and proposed a new structure to improve the on-state voltage and short-circuit capability. Finally, we use the ISE-TCAD simulation to research and analysis its charac-teristics and compare with traditional trench gate IGBT.

誌謝 i
摘要 iii
Abstract v
目錄 vii
圖目錄 viii
表目錄 x
第一章 緒論 1
1-1 研究背景與動機 1
1-2 IGBT 應用範圍 4
1-3 論文架構 6
第二章 IGBT技術發展與文獻回顧 7
2-1 前言 7
2-2 各功率元件比較 8
2-3 IGBT 特性與運作原理 12
2-3.1 IGBT 工作原理 12
2-3.2 續流二極體 (Freewheeling Diode, FWD) 13
2-3.3 導通特性 (On-state Characteristics) 14
2-3.4 耐壓特性 (Forward Blocking Characteristics) 15
2-3.5 開關特性 (Switching Characteristics) 16
2-3.6 短路能力 (Short Circuit Capability) 23
2-3.7 崩潰機制 (Breakdown) 24
2-3.8 閂鎖效應 (Latch-up) 25
2-3.9 額定集極電流 (Collector Current Rating , IC) 26
2-4 IGBT 表面閘極結構發展 29
2-4.1 平面式結構 (Planar) IGBT 30
2-4.2 溝槽式結構 (Trench) IGBT 33
2-5 IGBT 背部集極端結構發展 35
2-5.1 穿透型 (Punch Through, PT) IGBT 36
2-5.2 非穿透型 (Non Punch Through, NPT) IGBT 38
2-5.3 場截止型 (Field Stop, FS) IGBT 40
2-5.4 逆向導通 (Reverse Conducting, RC) IGBT 43
2-6 IGBT 歷史文獻回顧 44
2-6.1 電子注入增強型 IGBT (Injection Enhanced IGBT, IEGT) 45
2-6.2 溝槽式載子儲存 IGBT (Carrier Stored Trench Bipolar Transistor, CSTBT) 46
2-6.3 具有雙閘極之溝槽式 IGBT (Double Gate Trench IGBT, DG-TIGBT) 47
2-6.4 溝槽式高導電度 IGBT (Trench High Conductivity, HiGT) 49
第三章 新式 IGBT 元件設計與模擬分析 51
3-1 前言 51
3-2 元件結構設計 52
3-3 元件模擬製程步驟 53
3-4 P 柱設計結構比較 59
3-5 P 柱設計調變分析 66
3-6 傳統溝槽式與新式元件分析比較 88
3-7 終端區結構設計 91
第四章 結論 95
參考文獻 96

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