臺灣博碩士論文加值系統

在本研究中，我們以射頻磁控濺鍍(RF Magnetron Sputtering)方式對MEMS感測器進行CIGS薄膜濺鍍。在掃描式電子顯微鏡(SEM)下顯示出在長達24小時退火下，溫度在114°C到295°C時薄膜表面相當緻密，而當溫度達到351°C後奈米粒子大小達到52至80奈米，溫度再升高至389°C時奈米粒子尺寸縮小到34至75奈米，由X光繞射儀(XRD)繞射分析得知銅銦鎵硒(CuInGaSe2)主要衍射峰出現在2θ=26.74°(112)、44.54°(220/204)、52.9°(312/116)。
將不同退火溫度的感測晶片進行量測，可以觀察到退火溫度低於238°C的感測晶片對氣體不會有響應，隨著退火溫度升高感測器開始對氣體產生響應，並隨著操作溫度的提升感測器的響應與恢復速度加快，將CIGS/MEMS感測晶片溫度在330°C時進行不同氣體的量測(H2S、NO2、TVOC、CO、NH3)後發現對劇毒與腐蝕性氣體H2S和NO2有良好的響應，在16ppb低濃度也有4%響應，連續性量測H2S 1ppm濃度下也表現穩定。
另一部分，通過水熱法製作氧化鋅奈米線，並透過掃描式電子顯微鏡(SEM)與原子力顯微鏡(AFM)探討摩擦奈米發電機效益變化，可以看到隨著RMS由748上升至909時在震動所產生的短路電流增益也從4.63倍上升至6.12倍，在5Hz、25Hz與50Hz的震動頻率下短路電流的增益也根據不同的頻率而有3.66倍、5.62倍與6.12倍的差異。

In this study, we sputtered CIGS thin films on MEMS sensors by RF Magnetron Sputtering. Scanning electron microscopy (SEM) showed that the film surface was quite dense at temperatures ranging from 114°C to 295°C for up to 24 hours of annealing, while the nanoparticle sizes reached 52 to 80nm when the temperature reached 351°C. When the temperature is raised to 389 °C, the size of the nanoparticles is reduced to 34 to 75 nm. The X-ray diffractometer (XRD) diffraction analysis shows that the main diffraction peaks of copper indium gallium selenide (CuInGaSe2) appear at 2θ=26.74°(112), 44.54°(220/204), 52.9°(312/116).
Measuring the sensing wafers with different annealing temperatures, it can be observed that the sensing wafers with an annealing temperature lower than 238°C will not respond to the gas. As the annealing temperature increases, the sensor begins to respond to the gas, and with With the increase of operating temperature, the response and recovery speed of the sensor are accelerated. After measuring the CIGS/MEMS sensor chip temperature at 330°C for different gases (H2S, NO2, TVOC, CO, NH3), it is found that it is harmful to the highly toxic and Corrosive gases H2S and NO2 have a good response, and also have a 4% response at a low concentration of 16ppb, and the continuous measurement of H2S is also stable at a concentration of 1ppm.
In the other part, zinc oxide nanowires were fabricated by hydrothermal method, and the change of triboelectric nanogenerator efficiency was investigated by scanning electron microscope (SEM) and atomic force microscope (AFM). It can be seen that as the RMS increased from 748 to 909 The short-circuit current gain generated by the vibration also increased from 4.63 times to 6.12 times, and the short-circuit current gain at the vibration frequencies of 5Hz, 25Hz and 50Hz also varied by 3.66 times, 5.62 times and 6.12 times according to different frequencies.

目 錄
摘要 vi
Abstract vii
第一章、緒論 1
1-1前言 1
1-2空氣品質指標(Air Quality Index) 3
1-2-1 硫化氫中毒意外 3
1-2-2 本實驗與市售硫化氫感測器比較 4
1-2-3 常見有害氣體 5
1-3常見氣體感測器種類 7
1-3-1催化燃燒式氣體感測器 7
1-3-2電化學式氣體感測器 8
1-3-3半導體式氣體感測器 9
1-3-4紅外線氣體感測器 10
1-3-5固態電解質式氣體感測器 11
1-4常見震動感測器種類 11
1-4-1渦電流位移型感測器 11
1-4-2壓電式震動感測器 12
1-4-3阻抗頭式震動感測器 13
1-5研究動機 13
第二章、基礎理論與文獻探討 14
2-1硫化氫(H2S)感測的研究與演化 14
2-1-1硫化氫(H2S)氣體特性 15
2-2化合物半導體材料銅銦鎵硒特性 16
2-3半導體式氣體感測器感測機制 17
2-3-1硫化氫(H2S)氣體感測機制 17
2-3-2硫化氫(H2S)氣體量測參考文獻 18
2-4氧化鋅材料特性 20
2-4-1摩擦奈米發電機(TENG)參考文獻 21
第三章、實驗步驟 22
3-1實驗方法 22
3-2實驗材料 22
3-3製程設備與分析儀器 23
3-3-1製程設備 23
3-3-2分析儀器 24
3-4半導體式晶片型氣體感測器製作 26
3-4-1 前處理 26
3-4-2 氣體感測器黏晶與打線 26
3-4-3 防水塗層 28
3-4-4 射頻濺鍍薄膜 29
3-4-5 銅銦鎵硒薄膜老化退火 30
3-5氣體感測量測系統架設 31
3-6氧化鋅奈米線製備 32
第四章、實驗結果與討論 34
4-1 SEM各溫度退火分析 34
4-2 XRD分析 36
4-3拉曼分析 37
4-4霍爾電性量測 38
4-5 XPS分析 39
4-5-1 XPS縱深分析 39
4-5-2 XPS 表面分析 43
4-6熱影像儀分析 45
4-7硫化氫氣體量測 47
4-7-1 不同溫度退火量測硫化氫氣體 47
4-7-2不同工作溫度量測硫化氫氣體 49
4-7-3不同濃度量測H2S氣體 51
4-7-4硫化氫1ppm連續性量測 53
4-7-5選擇性量測 55
4-7-6長時間量測 56
4-8硫化氫(H2S)氣體感測機制 57
4-9氧化鋅奈米線XRD分析 58
4-10氧化鋅奈米線SEM分析 59
4-11氧化鋅奈米線AFM分析 61
4-12 TENG短路電流量測 62
4-13 TENG不同震動頻率比較 64
5-1結論 65
5-2未來展望 65
參考文獻 67

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