臺灣博碩士論文加值系統

摘要 i
Abstract iii
致謝 v
Contents vi
Figure Captions viii
Table Captions xi
Chapter 1 Introduction 1
1.1 Background 1
1.2 Motivation of This Work 2
1.3 Organization of The Thesis 3
Chapter 2 Basic Characteristics of Ferroelectric HZO 4
2.1 Introduction of Ferroelectricity in HZO 4
2.2 Thickness Dependent on Ferroelectric HZO 5
2.3 Impact of Zr Concentration in Ferroelectric HZO Thin Films 5
2.4 Interface Effect on Ferroelectric HZO 6
2.5 Performance of 1TCFe and 2T1CFe structure 7
Chapter 3 Experiment Setup and Device Preparation of HZO FeRAM 17
3.1 Overall Equipment Setup 17
3.2 The Process Flow of HZO MFM Capacitance 17
3.3 The Polarization Characteristics 19
3.4 Energy-Dispersive X-ray Spectroscopy Analysis 20
Chapter 4 The Performance of 2T1CFe Unit Cell 30
4.1 Enhanced Memory Window of 2T1CFe Unit Cell 30
4.2 Pulse Transients Characteristics of 2T1CFe 31
4.2.1 The Comparison of Programming Speed 31
4.2.2 The Comparison of Erasing Speed 32
4.3 The Capability of Multi-level Operations 33
4.3.1 Gradual Tuning Operation of 2T1CFe with HfO2 33
4.3.2 Continual Tuning Capability of 2T1CFe with HfO2 33
4.4 Endurance Cycling Tests for 3-bits-per-cell 34
Chapter 5 2T1CFe Memory Cell with Highly Stable Operations 43
5.1 Device Uniformity of 2T1CFe 43
5.2 The Comparison of Disturbance Immunity for 2T1CFe and 1T1CFe 43
5.2.1 PGM Disturbance 44
5.2.2 ERS Disturbance 44
5.2.3 Read Disturbance 45
5.2.4 Disturbance Tests for 1T1CFe and 2T1CFe 45
5.3 High-Temperature-Accelerated Tests for Data Retention 46
5.4 Short Summary 47
Chapter 6 Summary and Conclusion 56
References 59

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